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Researcher profile

Debolina Das

Debolina Das contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallComputer Vision

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3 published item(s)

preprint2014arXiv

Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other.

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preprint2012arXiv

A Comparative Study between Moravec and Harris Corner Detection of Noisy Images Using Adaptive Wavelet Thresholding Technique

In this paper a comparative study between Moravec and Harris Corner Detection has been done for obtaining features required to track and recognize objects within a noisy image. Corner detection of noisy images is a challenging task in image processing. Natural images often get corrupted by noise during acquisition and transmission. As Corner detection of these noisy images does not provide desired results, hence de-noising is required. Adaptive wavelet thresholding approach is applied for the same.

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preprint2012arXiv

Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.

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