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Researcher profile

B. N. Dev

B. N. Dev contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.other

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Published work

8 published item(s)

preprint2016arXiv

Evidence of Formation of Superdense Nonmagnetic Cobalt

Magnetism of 3d transition metals at high density has always received wide interest due to existence of magnetism at the core of the Earth. For ferromagnetic cobalt, although there is a theoretical prediction that its magnetic moment would vanish when the density increases to about 1.4 times the normal value, so far there is no experimental evidence. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.3-1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, which provide a depth profile of the electron scattering length density, and corroborated by polarized neutron reflectometry (PNR) experiments. The superdense Co layer has an fcc structure, unlike hcp structure for bulk Co, as revealed by transmission electron microscopy. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers at the film-substrate interface and near the top of the film are nonmagnetic. The major part of the Co film has the usual density and magnetic moment.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 micrometer wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favor an alignment of magnetization parallel to the stripe axis, the opposite behavior is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory

Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Crossover regimes in lower dimensional structures

Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of states (DOS) at Fermi level (Ef) keeps on changing as the size of the system changes. DOS at Ef determines many properties of materials, such as electronic specific heat, spin susceptibility etc. Keeping the importance of DOS at Ef in mind, we determine their values and other details of electronic structure of lower dimensional structures of metals, in the 0-D to 1-D, 1-D to 2-D, 2-D to 3-D, 0-D to 2-D, 0-D to 3-Dand 1-D to 3-Dcrossover regimes, in a simple free electron model. We compare our results with analytical theory and experimental results, wherever available. We also present some results obtained by scanning tunneling spectroscopy measurements on Ag islands on Si(111) evolving from a 0-D to a 2-D structure. This simple model is quite useful in understanding lower dimensional structures in the crossover regimes.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)

We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

The effect of exclusion on nonlinear reaction diffusion system in inhomogeneous media

We study a minimal model to understand the formation of clusters on surfaces in the presence of surface defects. We consider reaction diffusion model in which atoms undergoes reactions at the defect centers to form clusters. Volume exclusion between particles is introduced through a drift term in the reaction diffusion equation that arises due the repulsive force field produced by the clustering atoms. The volume exclusion terms can be derived from master equation with a concentration dependent hopping rate. Perturbative analysis is performed for both cross-exclusion and self-exclusion one dimensional system. For two dimension numerical analysis is performed. We have found that the clusterization process slows down due to exclusion. As a result the size of the clusters reduces. In this model reaction scheme has algebraic nonlinearity and plausible mechanism is also given.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces

Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520°C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550°C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate

Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ~ 2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(111)-(7x7) surfaces has been investigated by in-situ RHEED and STM and ex-situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550°C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [1 -1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si along with its twin [-1 1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si, as observed for epitaxial growth of Ag on Si(111) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si [111] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(111) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.

0 citations0 reviewsNo code linkedOpen access