Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO thin films
We study the thermal relaxation dynamics of VO films after the ultrafast photo-induced metal-insulator transition for two VO film samples grown on AlO and TiO substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO/AlO sample vs. hundreds of ns for the VO/TiO sample). We present a theoretical model that accurately describes the MIT thermal properties and interpret the experimental measurements. We obtain quantitative results that show how the microstructure of the VO film and the thermal conductivity of the interface between the VO film and the substrate affect long time-scale recovery dynamics. We also obtain a simple analytic relationship between the recovery time-scale and some of the film parameters.