Source author record

I. Novikova

I. Novikova appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

ResearcherUnclaimed source record

Catalog footprint

What is connected

6works
3topics
4close collaborators

Actions

Connect this record

Log in to claim

Research graph

See the researcher in context

Open full explorer

Inspect adjacent papers, topics, institutions and collaborators without losing the researcher page.

Building this map preview

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

6 published item(s)

preprint2015arXiv

Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO$_2$ thin films

We study the thermal relaxation dynamics of VO$_2$ films after the ultrafast photo-induced metal-insulator transition for two VO$_2$ film samples grown on Al$_2$O$_3$ and TiO$_2$ substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO$_2$/Al$_2$O$_3$ sample vs. hundreds of ns for the VO$_2$/TiO$_2$ sample). We present a theoretical model that accurately describes the MIT thermal properties and interpret the experimental measurements. We obtain quantitative results that show how the microstructure of the VO$_2$ film and the thermal conductivity of the interface between the VO$_2$ film and the substrate affect long time-scale recovery dynamics. We also obtain a simple analytic relationship between the recovery time-scale and some of the film parameters.

preprint2015arXiv

Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO$_2$ thin films

We investigate the differences in the dynamics of the ultrafast photo-induced metal-insulator transition (MIT) of two VO$_2$ thin films deposited on different substrates, TiO$_2$ and Al$_2$O$_3$, and in particular the temperature dependence of the threshold laser fluence values required to induce various MIT stages in a wide range of sample temperatures (150 K - 320 K). We identified that, although the general pattern of MIT evolution was similar for the two samples, there were several differences. Most notably, the threshold values of laser fluence required to reach the transition to a fully metallic phase in the VO$_2$ film on the TiO$_2$ substrate were nearly constant in the range of temperatures considered, whereas the VO$_2$/Al$_2$O$_3$ sample showed clear temperature dependence. Our analysis qualitatively connects such behavior to the structural differences in the two VO$_2$ films.

preprint2015arXiv

Suppression of the four-wave mixing amplification via Raman absorption

We propose a method to controllably suppress the effect of the four-wave mixing caused by the coupling of the strong control optical field to both optical transitions in the $Λ$ system under the conditions of electromagnetically induced transparency. At sufficiently high atomic density, this process leads to amplification of a weak optical signal field, that is detrimental for the fidelity of any EIT-based quantum information applications. Here we show that an additional absorption resonance centered around the idler field frequency, generated in such a four-wave mixing process, may efficiently suppress the unwanted signal amplification without affecting properties of the EIT interaction. We discuss the possibility of creating such tunable absorption using two-photon Raman absorption resonances in the other Rb isotope, and present some preliminary experimental results.

preprint2013arXiv

Substrate Effect on Optical Properties of Insulator-Metal Transition in VO2 Thin Films

In this paper we used Raman spectroscopy to investigate the optical properties of vanadium dioxide (VO2) thin films during the thermally induced insulating to metallic phase transition. We observed a significant difference in transition temperature in similar VO2 films grown on quartz and sapphire substrates: the film grown on quartz displayed the phase transition at a lower temperature (Tc=50C) compared a film grown on sapphire (Tc=68C). We also investigated differences in the detected Raman signal for different wavelengths and polarizations of the excitation laser. We found that for either substrate, a longer wavelength (in our case 785 nm) yielded the clearest VO2 Raman spectra, with no polarization dependence.

preprint2009arXiv

Magnetic field imaging with atomic Rb vapor

We demonstrate the possibility of dynamic imaging of magnetic fields using electromagnetically induced transparency in an atomic gas. As an experimental demonstration we employ an atomic Rb gas confined in a glass cell to image the transverse magnetic field created by a long straight wire. In this arrangement, which clearly reveals the essential effect, the field of view is about 2 x 2 mm^2 and the field detection uncertainty is 0.14 mG per 10 um x 10 um image pixel.

preprint2009arXiv

Slow light propagation and amplification via electromagnetically induced transparency and four-wave mixing in an optically dense atomic vapor

We experimentally and theoretically analyze the propagation of weak signal field pulses under the conditions of electromagnetically induced transparency (EIT) in hot Rb vapor, and study the effects of resonant four-wave mixing (FWM). In particular, we demonstrate that in a double-$Λ$ system, formed by the strong control field with the weak resonant signal and a far-detuned Stokes field, both continuous-wave spectra and pulse propagation dynamics for the signal field depend strongly on the amplitude of the seeded Stokes field, and the effect is enhanced in optically dense atomic medium. We also show that the theory describing the coupled propagation of the signal and Stokes fields is in good agreement with the experimental observations.