Researcher profile

Quentin Ramasse

Quentin Ramasse contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2019arXiv

Imaging localized plasmon resonances in vacancy doped Cu3-xP semiconductor nanocrystals with STEM-EELS

Copper binary compounds are often intrinsic p-type semiconductors due to the presence of Cu(I) vacancies, with corresponding hole carriers in the valence band. If the free carrier concentration is high enough, localized plasmon resonances can be sustained in nanocrystals, with frequencies in the infra-red (<1 eV), with respect to the typical resonances seen in the visible range in the case of metals (Ag, Au, ...). The localization of the resonances can be demonstrated with scanning transmission electron energy loss spectroscopy (STEM-EELS) by combining high spatial and high energy resolutions. Here we demonstrate that Cu(I) vacancies can be directly measured from the STEM images in Cu(3-x)P hexagonal nanocrystals. Two localized resonances can be seen from STEM-EELS, which are in agreement with the resonances calculated from the vacancy concentration obtained from the STEM.

preprint2014arXiv

Atomically Resolved Imaging of Highly Ordered Alternating Fluorinated Graphene

One of the most desirable goals of graphene research is to produce ordered 2D chemical derivatives of suitable quality for monolayer device fabrication. Here we reveal, by focal series exit wave reconstruction, that C2F chair is a stable graphene derivative and demonstrates pristine long-range order limited only by the size of a functionalized domain. Focal series of images of graphene and C2F chair formed by reaction with XeF2 were obtained at 80 kV in an aberration-corrected transmission electron microscope. EWR images reveal that single carbon atoms and carbon-fluorine pairs in C2F chair alternate strictly over domain sizes of at least 150 nm^2 with electron diffraction indicating ordered domains >/= 0.16 square micrometer. Our results also indicate that, within an ordered domain, functionalization occurs on one side only as theory predicts. Additionally we show that electron diffraction provides a quick and easy method for distinguishing between graphene, C2F chair and fully fluorinated stoichiometric CF 2D phases.

preprint2014arXiv

Silicon-carbon bond inversions driven by 60 keV electrons in graphene

We demonstrate that 60 keV electron irradiation drives the diffusion of threefold coordinated Si dopants in graphene by one lattice site at a time. First principles simulations reveal that each step is caused by an electron impact on a C atom next to the dopant. Although the atomic motion happens below our experimental time resolution, stochastic analysis of 38 such lattice jumps reveals a probability for their occurrence in a good agreement with the simulations. Conversions from three- to fourfold coordinated dopant structures and the subsequent reverse process are significantly less likely than the direct bond inversion. Our results thus provide a model of non-destructive and atomically precise structural modification and detection for two-dimensional materials.