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Andre K. Geim

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Published work

18 published item(s)

preprint2025arXiv

Unconventional magnetization in the multiphase superconductor PdBi$_2$

Unconventional superconductors have specific signatures in their magnetic properties, such as intrinsic magnetization at interfaces and around defects and fractional and multiquanta vortices, with much attention focused on heavy fermion and high-$T_c$ superconductors. Here, we report the observation of highly anomalous magnetization in $β$-PdBi$_2$, a layered superconductor previously shown to exhibit a magnetic field-induced transition from s-wave to nodal p-wave superconductivity at a transition field $H^*\sim$0.1 T ($H_{C1}<H^*<H_{C2}$). This transition is driven by the coupling between spin-polarized electronic bands and the in-plane magnetic field. In the unconventional phase (above $H^*$) we observe three striking features: strictly linear and non-hysteretic dc magnetization, a sharp drop in the ac susceptibility when the field is applied parallel to the ab-plane, and a pronounced anisotropy in the magnetic response between parallel and perpendicular field orientations. We show that these features are directly correlated with the expected transition to the nodal p-wave state and propose that the unusual magnetization behavior can be explained by a transition from a conventional vortex lattice in the low-field s-wave phase to a domain structure corresponding to spatial phase separation into superconducting (p-wave) and normal domains above $H^*$. Our work identifies new experimental signatures of unconventional multiphase superconductivity, offering an insight into the magnetic-field response of nodal states.

preprint2024arXiv

Elastocapillarity-driven 2D nano-switches enable zeptoliter-scale liquid encapsulation

Biological nanostructures change their shape and function in response to external stimuli, and significant efforts have been made to design artificial biomimicking devices operating on similar principles. In this work we demonstrate a programmable nanofluidic switch, driven by elastocapillarity, and based on nanochannels built from layered two-dimensional nanomaterials possessing atomically smooth surfaces and exceptional mechanical properties. We explore operational modes of the nanoswitch and develop a theoretical framework to explain the phenomenon. By predicting the switching-reversibility phase diagram - based on material, interfacial and wetting properties, as well as the geometry of the nanofluidic circuit - we rationally design switchable nano-capsules capable of enclosing zeptoliter volumes of liquid, as small as the volumes enclosed in viruses. The nanoswitch will find useful application as an active element in integrated nanofluidic circuitry and could be used to explore nanoconfined chemistry and biochemistry, or be incorporated into shape-programmable materials.

preprint2022arXiv

Gas permeation through graphdiyne-based nanoporous membranes

Nanoporous membranes based on two dimensional materials are predicted to provide highly selective gas transport in combination with extreme permeability. Here we investigate membranes made from multilayer graphdiyne, a graphene-like crystal with a larger unit cell. Despite being nearly a hundred of nanometers thick, the membranes allow fast, Knudsen-type permeation of light gases such as helium and hydrogen whereas heavy noble gases like xenon exhibit strongly suppressed flows. Using isotope and cryogenic temperature measurements, the seemingly conflicting characteristics are explained by a high density of straight-through holes (direct porosity of ~0.1%), in which heavy atoms are adsorbed on the walls, partially blocking Knudsen flows. Our work offers important insights into intricate transport mechanisms playing a role at nanoscale.

preprint2022arXiv

Two-dimensional Functional Minerals for Sustainable Optics

Optical device is a key component in our lives and organic liquid crystals are nowadays widely used to reduce human imprint. However, this technology still suffers from relatively high costs, toxicity and other environmental impacts, and cannot fully meet the demand of future sustainable society. Here we describe an alternative approach to colour-tuneable optical devices, which is based on sustainable inorganic liquid crystals derived from two-dimensional mineral materials abundant in nature. The prototypical two-dimensional mineral of vermiculite is massively produced by a green method, possessing size-to-thickness ratios of >103, in-plane magnetisation of >10 emu g-1, and an optical bandgap of >3 eV. These characteristics endow two-dimensional vermiculite with sensitive magneto-birefringence response, which is several orders of magnitude larger than organic counterparts, as well as capability of broad-spectrum modulation. Our finding consequently permits the fabrication of various chromic devices with low or even zero-energy consumption, which can be used for sustainable optics.

preprint2020arXiv

Evidence of Flat Bands and Correlated States in Buckled Graphene Superlattices

Two-dimensional atomic crystals can radically change their properties in response to external influences such as substrate orientation or strain, resulting in essentially new materials in terms of the electronic structure. A striking example is the creation of flat-bands in bilayer-graphene for certain 'magic' twist-angles between the orientations of the two layers. The quenched kinetic-energy in these flat-bands promotes electron-electron interactions and facilitates the emergence of strongly-correlated phases such as superconductivity and correlated-insulators. However, the exquisite fine-tuning required for finding the magic-angle where flat-bands appear in twisted-bilayer graphene, poses challenges to fabrication and scalability. Here we present an alternative route to creating flat-bands that does not involve fine tuning. Using scanning tunneling microscopy and spectroscopy, together with numerical simulations, we demonstrate that graphene monolayers placed on an atomically-flat substrate can be forced to undergo a buckling-transition, resulting in a periodically modulated pseudo-magnetic field, which in turn creates a post-graphene material with flat electronic bands. Bringing the Fermi-level into these flat-bands by electrostatic doping, we observe a pseudogap-like depletion in the density-of-states, which signals the emergence of a correlated-state. The described approach of 2D crystal buckling offers a strategy for creating other superlattice systems and, in particular, for exploring interaction phenomena characteristic of flat-bands.

preprint2020arXiv

Proton and Li-Ion Permeation through Graphene with Eight-Atom-Ring Defects

Defect-free graphene is impermeable to gases and liquids but highly permeable to thermal protons. Atomic-scale defects such as vacancies, grain boundaries and Stone-Wales defects are predicted to enhance graphene's proton permeability and may even allow small ions through, whereas larger species such as gas molecules should remain blocked. These expectations have so far remained untested in experiment. Here we show that atomically thin carbon films with a high density of atomic-scale defects continue blocking all molecular transport, but their proton permeability becomes ~1,000 times higher than that of defect-free graphene. Lithium ions can also permeate through such disordered graphene. The enhanced proton and ion permeability is attributed to a high density of 8-carbon-atom rings. The latter pose approximately twice lower energy barriers for incoming protons compared to the 6-atom rings of graphene and a relatively low barrier of ~0.6 eV for Li ions. Our findings suggest that disordered graphene could be of interest as membranes and protective barriers in various Li-ion and hydrogen technologies.

preprint2019arXiv

Imaging work and dissipation in the quantum Hall state in graphene

Topology is a powerful recent concept asserting that quantum states could be globally protected against local perturbations. Dissipationless topologically protected states are thus of major fundamental interest as well as of practical importance in metrology and quantum information technology. Although topological protection can be robust theoretically, in realistic devices it is often fragile against various dissipative mechanisms, which are difficult to probe directly because of their microscopic origins. By utilizing scanning nanothermometry, we visualize and investigate microscopic mechanisms undermining the apparent topological protection in the quantum Hall state in graphene. Our simultaneous nanoscale thermal and scanning gate microscopy shows that the dissipation is governed by crosstalk between counterpropagating pairs of downstream and upstream channels that appear at graphene boundaries because of edge reconstruction. Instead of local Joule heating, however, the dissipation mechanism comprises two distinct and spatially separated processes. The work generating process that we image directly and which involves elastic tunneling of charge carriers between the quantum channels, determines the transport properties but does not generate local heat. The independently visualized heat and entropy generation process, in contrast, occurs nonlocally upon inelastic resonant scattering off single atomic defects at graphene edges, while not affecting the transport. Our findings offer a crucial insight into the mechanisms concealing the true topological protection and suggest venues for engineering more robust quantum states for device applications.

preprint2018arXiv

Fluidity Onset in Graphene

Viscous electron fluids have emerged recently as a new paradigm of strongly-correlated electron transport in solids. Here we report on a direct observation of the transition to this long-sought-for state of matter in a high-mobility electron system in graphene. Unexpectedly, the electron flow is found to be interaction-dominated but non-hydrodynamic (quasiballistic) in a wide temperature range, showing signatures of viscous flows only at relatively high temperatures. The transition between the two regimes is characterized by a sharp maximum of negative resistance, probed in proximity to the current injector. The resistance decreases as the system goes deeper into the hydrodynamic regime. In a perfect darkness-before-daybreak manner, the interaction-dominated negative response is strongest at the transition to the quasiballistic regime. Our work provides the first demonstration of how the viscous fluid behavior emerges in an interacting electron system.

preprint2016arXiv

Electron hydrodynamics dilemma: whirlpools or no whirlpools

In highly viscous electron systems such as, for example, high quality graphene above liquid nitrogen temperature, a linear response to applied electric current becomes essentially nonlocal, which can give rise to a number of new and counterintuitive phenomena including negative nonlocal resistance and current whirlpools. It has also been shown that, although both effects originate from high electron viscosity, a negative voltage drop does not principally require current backflow. In this work, we study the role of geometry on viscous flow and show that confinement effects and relative positions of injector and collector contacts play a pivotal role in the occurrence of whirlpools. Certain geometries may exhibit backflow at arbitrarily small values of the electron viscosity, whereas others require a specific threshold value for whirlpools to emerge.

preprint2016arXiv

Electrostatically confined monolayer graphene quantum dots with orbital and valley splittings

The electrostatic confinement of massless charge carriers is hampered by Klein tunneling. Circumventing this problem in graphene mainly relies on carving out nanostructures or applying electric displacement fields to open a band gap in bilayer graphene. So far, these approaches suffer from edge disorder or insufficiently controlled localization of electrons. Here we realize an alternative strategy in monolayer graphene, by combining a homogeneous magnetic field and electrostatic confinement. Using the tip of a scanning tunneling microscope, we induce a confining potential in the Landau gaps of bulk graphene without the need for physical edges. Gating the localized states towards the Fermi energy leads to regular charging sequences with more than 40 Coulomb peaks exhibiting typical addition energies of 7-20 meV. Orbital splittings of 4-10 meV and a valley splitting of about 3 meV for the first orbital state can be deduced. These experimental observations are quantitatively reproduced by tight binding calculations, which include the interactions of the graphene with the aligned hexagonal boron nitride substrate. The demonstrated confinement approach appears suitable to create quantum dots with well-defined wave function properties beyond the reach of traditional techniques.

preprint2015arXiv

Extremely large magnetoresistance in few-layer graphene/boron-nitride heterostructures

Understanding magnetoresistance, the change in electrical resistance upon an external magnetic field, at the atomic level is of great interest both fundamentally and technologically. Graphene and other two-dimensional layered materials provide an unprecedented opportunity to explore magnetoresistance at its nascent stage of structural formation. Here, we report an extremely large local magnetoresistance of ~ 2,000% at 400 K and a non-local magnetoresistance of > 90,000% in 9 T at 300 K in few-layer graphene/boron-nitride heterostructures. The local magnetoresistance is understood to arise from large differential transport parameters, such as the carrier mobility, across various layers of few-layer graphene upon a normal magnetic field, whereas the non-local magnetoresistance is due to the magnetic field induced Ettingshausen-Nernst effect. Non-local magnetoresistance suggests the possibility of a graphene based gate tunable thermal switch. In addition, our results demonstrate that graphene heterostructures may be promising for magnetic field sensing applications.

preprint2015arXiv

Non-local transport and the hydrodynamic shear viscosity in graphene

Motivated by recent experimental progress in preparing encapsulated graphene sheets with ultra-high mobilities up to room temperature, we present a theoretical study of dc transport in doped graphene in the hydrodynamic regime. By using the continuity and Navier-Stokes equations, we demonstrate analytically that measurements of non-local resistances in multi-terminal Hall bar devices can be used to extract the hydrodynamic shear viscosity of the two-dimensional (2D) electron liquid in graphene. We also discuss how to probe the viscosity-dominated hydrodynamic transport regime by scanning probe potentiometry and magnetometry. Our approach enables measurements of the viscosity of any 2D electron liquid in the hydrodynamic transport regime.

preprint2014arXiv

Atomically Resolved Imaging of Highly Ordered Alternating Fluorinated Graphene

One of the most desirable goals of graphene research is to produce ordered 2D chemical derivatives of suitable quality for monolayer device fabrication. Here we reveal, by focal series exit wave reconstruction, that C2F chair is a stable graphene derivative and demonstrates pristine long-range order limited only by the size of a functionalized domain. Focal series of images of graphene and C2F chair formed by reaction with XeF2 were obtained at 80 kV in an aberration-corrected transmission electron microscope. EWR images reveal that single carbon atoms and carbon-fluorine pairs in C2F chair alternate strictly over domain sizes of at least 150 nm^2 with electron diffraction indicating ordered domains >/= 0.16 square micrometer. Our results also indicate that, within an ordered domain, functionalization occurs on one side only as theory predicts. Additionally we show that electron diffraction provides a quick and easy method for distinguishing between graphene, C2F chair and fully fluorinated stoichiometric CF 2D phases.

preprint2012arXiv

Atomically thin boron nitride: a tunnelling barrier for graphene devices

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel conductance depends exponentially on the number of h-BN atomic layers, down to a monolayer thickness. Exponential behaviour of I-V characteristics for graphene/BN/graphene and graphite/BN/graphite devices is determined mainly by the changes in the density of states with bias voltage in the electrodes. Conductive atomic force microscopy scans across h-BN terraces of different thickness reveal a high level of uniformity in the tunnel current. Our results demonstrate that atomically thin h-BN acts as a defect-free dielectric with a high breakdown field; it offers great potential for applications in tunnel devices and in field-effect transistors with a high carrier density in the conducting channel.

preprint2012arXiv

Raman spectroscopy of graphene and bilayer under biaxial strain: bubbles and balloons

In this letter we use graphene bubbles to study the Raman spectrum of graphene under biaxial (e.g. isotropic) strain. Our Gruneisen parameters are in excellent agreement with the theoretical values. Discrepancy in the previously reported values is attributed to the interaction of graphene with the substrate. Bilayer balloons (intentionally pressurized membranes) have been used to avoid the effect of the substrate and to study the dependence of strain on the inter-layer interactions.

preprint2012arXiv

Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other two-dimensional (2D) crystals, which can be assembled in 3D stacks with atomic layer precision. These layered structures have already led to a range of fascinating physical phenomena, and also have been used in demonstrating a prototype field effect tunnelling transistor - a candidate for post-CMOS technology. The range of possible materials which could be incorporated into such stacks is very large. Indeed, there are many other materials where layers are linked by weak van der Waals forces, which can be exfoliated and combined together to create novel highly-tailored heterostructures. Here we describe a new generation of field effect vertical tunnelling transistors where 2D tungsten disulphide serves as an atomically thin barrier between two layers of either mechanically exfoliated or CVD-grown graphene. Our devices have unprecedented current modulation exceeding one million at room temperature and can also operate on transparent and flexible substrates.

preprint2010arXiv

From Graphene to Carbon Fibres: Mechanical Deformation and Development of a Universal Stress Sensor

Carbon fibres (CF) represent a significant volume fraction of modern structural airframes. Embedded into polymer matrices, they provide significant strength and stiffness gains over unit weight as compared to other competing structural materials. Nevertheless, no conclusive structural model yet exists to account for their extraordinary properties. In particular, polyacrynonitrile (PAN) derived CF are known to be fully turbostratic: the graphene layers are slipped sideways relative to each other, which leads to an inter-graphene distance much greater than graphite. Here, we demonstrate that CF derive their mechanical properties from those of graphene itself. By monitoring the Raman G peak shift with strain for both CF and graphene, we develop a universal master plot relating the G peak strain sensitivity of all types of CF to graphene over a wide range of tensile moduli. A universal value of - average- shift rate with axial stress of ~ -5ω0^-1 (cm^-1 MPa^-1)is calculated for both graphene and all CF exhibiting annular ("onion-skin") morphology.

preprint2006arXiv

Born-Oppenheimer Breakdown in Graphene

The Born-Oppenheimer approximation (BO) has proven effective for the accurate determination of chemical reactions, molecular dynamics and phonon frequencies in a wide range of metallic systems. Graphene, recently discovered in the free state, is a zero band-gap semiconductor, which becomes a metal if the Fermi energy is tuned applying a gate-voltage Vg. Graphene electrons near the Fermi energy have twodimensional massless dispersions, described by Dirac cones. Here we show that a change in Vg induces a stiffening of the Raman G peak (i.e. the zone-center E2g optical phonon), which cannot be described within BO. Indeed, the E2g vibrations cause rigid oscillations of the Dirac-cones in the reciprocal space. If the electrons followed adiabatically the Dirac-cone oscillations, no change in the phonon frequency would be observed. Instead, since the electron-momentum relaxation near the Fermi level is much slower than the phonon motion, the electrons do not follow the Dirac-cone displacements. This invalidates BO and results in the observed phonon stiffening. This spectacular failure of BO is quite significant since BO has been the fundamental paradigm to determine crystal vibrations from the early days of quantum mechanics.