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Qing-Ge Mu

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cond-mat.supr-con cond-mat.mtrl-sci

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preprint2016arXiv

Superconductivity at 7.8 K in the ternary LaRu2As2 compound

Here we report the discovery of superconductivity in the ternary LaRu2As2 compound. The polycrystalline LaRu2As2 samples were synthesized by the conventional solid state reaction method. Powder X-ray diffraction analysis indicates that LaRu2As2 crystallizes in the ThCr2Si2-type crystal structure with the space group I4/mmm (No. 139), and the refined lattice parameters are a = 4.182(6) Å and c = 10.590(3) Å. The temperature dependent resistivity measurement shows a clear superconducting transition with the onset Tc (critical temperature) at 7.8 K, and zero resistivity happens at 6.8 K. The upper critical field at zero temperature m0Hc2(0) was estimated to be 1.6 T from the resistivity measurement. DC magnetic susceptibility measurement shows a bulk superconducting Meissner transition at 7.0 K, and the isothermal magnetization measurement indicates that LaRu2As2 is a type-II superconductor.

preprint2015arXiv

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

The single crystal of ThCr2Si2-type BaPd2As2 was successfully prepared by a self-flux method, and the crystal structure was characterized by X-ray diffraction method with the lattice parameters a = 4.489(2) Å and c = 10.322(3) Å. Bulk superconductivity below a Tc (critical temperature) of 3.85 K was revealed in this compound by the measurements of resistivity, magnetic susceptibility and specific heat, and this Tc is much higher than those of other isostructural Pd-based superconductors.

preprint2014arXiv

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

The layered compound LaOBiSSe was successfully synthesized by a two-step solid-state reaction method, which is isostructural with the quaternary compound LaOBiS2 indicated by the powder X-ray diffraction characterization, and the crystal lattice parameters are slightly expanded by the substitution of Se atoms. Electrical transport measurement shows that LaOBiSSe exhibits semiconducting behavior similar with the parent compound LaOBiS2, while by F-doping the samples can be much more easily turned to be metallic and superconducting at low temperature with a small amount of F. Under the optimal carrier doping concentration of F ~ 0.5, the superconducting critical temperature of LaO0.5F0.5BiSSe is clearly enhanced up to a value of 3.8 K than the 3.2 K of LaO0.5F0.5BiS2.