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Gen-Fu Chen

Gen-Fu Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.supr-concond-mat.mes-hall

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Published work

11 published item(s)

preprint2022arXiv

NdAlSi: a magnetic Weyl semimetal candidate with rich magnetic phases and atypical transport properties

Magnetic Weyl semimetals (MWSM) have attracted significant attention due to their intriguing physical properties and potential applications in spin-electronic devices. Here we report the characterization of NdAlSi including transport, magnetization, and heat capacity on single crystals, as well as band structure calculation. It is a newly proposed MWSM candidate which breaks both time-reversal and spacial inversion symmetries. A temperature-magnetic field phase diagram is experimentally established. Remarkably, on the angular magnetoresistance (AMR), a two-fold symmetric sharp peak instead of a smooth variation is observed in the field-induced ferrimagnetic phase. We argue that the tunability of both the topological and magnetic properties in NdAlSi is crucial for realizing such a behavior. Our results indicate that 4f-electron-based MWSM can provide a unique platform to explore new and intriguing quantum phenomena arising from the interaction between magnetism and topology.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

New Type of Quantum Oscillations Stemmed From the Strong Weyl Fermions - 4f Electrons Exchange Interaction

The interplay between magnetism and the topology of electronic band structure may generate new exotic quantum states. Here we report on a new type of quantum oscillations in the temperature dependent electrical resistivity and specific heat at a constant magnetic field in a polar magnetic Weyl semimetal (WSM) NdAlSi. These novel quantum phenomena arise from the destructive interference between quantum oscillations from the spin-split Fermi surfaces due to the strong Weyl fermions-4f electrons exchange interaction combined with Rashba-Dresselhaus (RD) and Zeeman effects. Our findings pave a way to explore unprecedented quantum phenomena in 4f-electron based magnetic semimetals.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo$_5$Si$_3$

By performing P doping on the Si sites in the topological semimetal Mo$_5$Si$_3$, we discover strong-coupling superconductivity in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0). Mo$_5$Si$_3$ crystallizes in the W$_5$Si$_3$-type structure with space group of $I4/mcm$ (No. 140), and is not a superconductor itself. Upon P doping, the lattice parameter $a$ decreases while $c$ increases monotonously. Bulk superconductivity is revealed in Mo$_5$Si$_{3-x}$P$_x$ (0.5 $\le$ $x$ $\le$ 2.0) from resistivity, magnetization, and heat capacity measurements. $T_c$ in Mo$_5$Si$_{1.5}$P$_{1.5}$ reaches as high as 10.8 K, setting a new record among the W$_5$Si$_3$-type superconductors. The upper and lower critical fields for Mo$_5$Si$_{1.5}$P$_{1.5}$ are 14.56 T and 105 mT, respectively. Moreover, Mo$_5$Si$_{1.5}$P$_{1.5}$ is found to be a fully gapped superconductor with strong electron-phonon coupling. First-principles calculations suggest that the enhancement of electron-phonon coupling is possibly due to the shift of the Fermi level, which is induced by electron doping. The calculations also reveal the nontrivial band topology in Mo$_5$Si$_3$. The $T_c$ and upper critical field in Mo$_5$Si$_{3-x}$P$_x$ are fairly high among pseudobinary compounds. Both of them are higher than those in NbTi, making future applications promising. Our results suggest that the W$_5$Si$_3$-type compounds are ideal platforms to search for new superconductors. By examinations of their band topologies, more candidates for topological superconductors can be expected in this structural family.

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preprint2021arXiv

Superconductivity with a Violation of Pauli Limit and Evidences for Multigap in $η$-Carbide type Ti$_4$Ir$_2$O

We report the synthesis, crystal structure, and superconductivity of Ti$_4$Ir$_2$O. The title compound crystallizes in an $η$-carbide type structure of the space group $Fd\overline{3}m$ (No. 227), with lattice parameters $a=b=c=11.6194(1)$ Å. The superconducting $T_c$ is found to be 5.1 $\sim$ 5.7 K. Most surprisingly, Ti$_4$Ir$_2$O hosts an upper critical field of 16.45 T, which is far beyond the Pauli paramagnetic limit. Strong coupled superconductivity with evidences for multigap is revealed by the measurements of heat capacity and upper critical field. First-principles calculations suggest that the density of states near the Fermi level originates from the hybridization of Ti-3$d$ and Ir-5$d$ orbitals, and the effect of spin-orbit coupling on the Fermi surfaces is prominent. Large values of the Wilson ratio ($R_W$ $\sim$ 3.9), the Kadowaki-Woods ratio ($A/γ^2$ $\sim$ 9.0 $\times$ 10$^{-6}$ $μΩ$ cm/(mJ mol$^{-1}$ K$^{-1}$)$^2$), and the Sommerfeld coefficient ($γ$ = 33.74 mJ mol$^{-1}$ K$^{-2}$) all suggest strong electron correlations (similar to heavy fermion systems) in Ti$_4$Ir$_2$O. The violation of Pauli limit is possibly due to a combination of strong-coupled superconductivity, large spin-orbit scattering, and electron correlation. With these intriguing behaviors, Ti$_4$Ir$_2$O serves as a candidate for unconventional superconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Experimental observations indicating the topological nature of the edge states on HfTe5

The topological edge states of two-dimensional topological insulators with large energy gap furnish ideal conduction channels for dissipationless current transport. Transition metal tellurides XTe5 (X=Zr, Hf) are theoretically predicted to be large-gap two-dimensional topological insulators and the experimental observations of their bulk insulating gap and in-gap edge states have been reported, but the topological nature of these edge states still remains to be further elucidated. Here, we report our low temperature scanning tunneling microscopy/spectroscopy study on single crystals of HfTe5. We demonstrate a full energy gap of ~80 meV near the Fermi level on the surface monolayer of HfTe5 and that such insulating energy gap gets filled with finite energy states when measured at the monolayer step edges. Remarkably, such states are absent at the edges of a narrow monolayer strip of one-unit-cell in width but persist at both step edges of a unit-cell wide monolayer groove. These experimental observations strongly indicate that the edge states of HfTe5 monolayers are not trivially caused by translational symmetry breaking, instead they are topological in nature protected by the 2D nontrivial bulk properties.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Inelastic electron tunneling in 2H-Ta$_x$Nb$_{1-x}$Se$_2$ evidenced by scanning tunneling spectroscopy

We report a detailed study of tunneling spectra measured on 2H-Ta$_x$Nb$_{1-x}$Se$_2$ ($x=0\sim 0.1$) single crystals using a low-temperature scanning tunneling microscope. The prominent gap-like feature unintelligible for a long time was found to be accompanied by some "in-gap" fine structures. By investigating the second-derivative spectra and their temperature and magnetic field dependencies, we were able to prove that inelastic electron tunneling is the origin of these features and obtain the Eliashberg function of 2H-Ta$_x$Nb$_{1-x}$Se$_2$ at atomic scale, providing a potential way to study the local Eliashberg function and phonon spectra of the related transition-metal dichalcogenides.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spontaneous Formation of a Superconductor-Topological Insulator-Normal Metal Layered Heterostructure

The discovery of graphene has spurred vigorous investigation of 2D materials, revealing a wide range of extraordinary properties and functionalities. 2D heterostructural materials have recently been fabricated by assembling isolated planes layer-by-layer in a desired sequence. Unusual properties and novel physical phenomena have been unveiled in such layered heterostructures. For example, Hofstadter's butterfly, an intriguing pattern of the energy states of Bloch electrons, was predicted several decades ago to be observable only under unfeasibly strong magnetic fields in conventional materials. But it has been observed recently under current experimental conditions in graphene/BN layered heterostructures, one of the outstanding new kinds of 2D materials. Moreover, another amazing physics phenomenon, Majorana fermions was predicted to exist in heterostructural systems consisting of a superconductor (SC) and a topological insulator (TI) Journal.

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preprint2016arXiv

Superconductivity at 7.8 K in the ternary LaRu2As2 compound

Here we report the discovery of superconductivity in the ternary LaRu2As2 compound. The polycrystalline LaRu2As2 samples were synthesized by the conventional solid state reaction method. Powder X-ray diffraction analysis indicates that LaRu2As2 crystallizes in the ThCr2Si2-type crystal structure with the space group I4/mmm (No. 139), and the refined lattice parameters are a = 4.182(6) Å and c = 10.590(3) Å. The temperature dependent resistivity measurement shows a clear superconducting transition with the onset Tc (critical temperature) at 7.8 K, and zero resistivity happens at 6.8 K. The upper critical field at zero temperature m0Hc2(0) was estimated to be 1.6 T from the resistivity measurement. DC magnetic susceptibility measurement shows a bulk superconducting Meissner transition at 7.0 K, and the isothermal magnetization measurement indicates that LaRu2As2 is a type-II superconductor.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

The single crystal of ThCr2Si2-type BaPd2As2 was successfully prepared by a self-flux method, and the crystal structure was characterized by X-ray diffraction method with the lattice parameters a = 4.489(2) Å and c = 10.322(3) Å. Bulk superconductivity below a Tc (critical temperature) of 3.85 K was revealed in this compound by the measurements of resistivity, magnetic susceptibility and specific heat, and this Tc is much higher than those of other isostructural Pd-based superconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

The layered compound LaOBiSSe was successfully synthesized by a two-step solid-state reaction method, which is isostructural with the quaternary compound LaOBiS2 indicated by the powder X-ray diffraction characterization, and the crystal lattice parameters are slightly expanded by the substitution of Se atoms. Electrical transport measurement shows that LaOBiSSe exhibits semiconducting behavior similar with the parent compound LaOBiS2, while by F-doping the samples can be much more easily turned to be metallic and superconducting at low temperature with a small amount of F. Under the optimal carrier doping concentration of F ~ 0.5, the superconducting critical temperature of LaO0.5F0.5BiSSe is clearly enhanced up to a value of 3.8 K than the 3.2 K of LaO0.5F0.5BiS2.

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preprint2013arXiv

Dopant Clustering, Electronic Inhomogeneity, and Vortex Pinning in Iron-Based Superconductors

We use scanning tunneling microscopy to map the surface structure, nanoscale electronic inhomogeneity, and vitreous vortex phase in the hole-doped superconductor Sr$_{0.75}$K$_{0.25}$Fe$_2$As$_2$ with $T_c$=32 K. We find the low-$T$ cleaved surface is dominated by a half-Sr/K termination with $1\times 2$ ordering and ubiquitous superconducting gap, while patches of gapless, unreconstructed As termination appear rarely. The superconducting gap varies by $σ/\barΔ$=16% on a $\sim$3 nm length scale, with average $2\barΔ/k_B T_c=3.6$ in the weak coupling limit. The vortex core size provides a measure of the superconducting coherence length $ξ$=2.3 nm. We quantify the vortex lattice correlation length at 9 T in comparison to several iron-based superconductors. The comparison leads us to suggest the importance of dopant size mismatch as a cause of dopant clustering, electronic inhomogeneity, and strong vortex pinning.

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