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Bin-Bin Ruan

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cond-mat.supr-con cond-mat.mtrl-sci

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preprint2022arXiv

Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo $_5$ Si $_3$

By performing P doping on the Si sites in the topological semimetal Mo $_5$ Si $_3$ , we discover strong-coupling superconductivity in Mo $_5$ Si $_{3-x}$ P $_x$ (0.5 $\le$ $x$ $\le$ 2.0). Mo $_5$ Si $_3$ crystallizes in the W $_5$ Si $_3$ -type structure with space group of $I4/mcm$ (No. 140), and is not a superconductor itself. Upon P doping, the lattice parameter $a$ decreases while $c$ increases monotonously. Bulk superconductivity is revealed in Mo $_5$ Si $_{3-x}$ P $_x$ (0.5 $\le$ $x$ $\le$ 2.0) from resistivity, magnetization, and heat capacity measurements. $T_c$ in Mo $_5$ Si $_{1.5}$ P $_{1.5}$ reaches as high as 10.8 K, setting a new record among the W $_5$ Si $_3$ -type superconductors. The upper and lower critical fields for Mo $_5$ Si $_{1.5}$ P $_{1.5}$ are 14.56 T and 105 mT, respectively. Moreover, Mo $_5$ Si $_{1.5}$ P $_{1.5}$ is found to be a fully gapped superconductor with strong electron-phonon coupling. First-principles calculations suggest that the enhancement of electron-phonon coupling is possibly due to the shift of the Fermi level, which is induced by electron doping. The calculations also reveal the nontrivial band topology in Mo $_5$ Si $_3$ . The $T_c$ and upper critical field in Mo $_5$ Si $_{3-x}$ P $_x$ are fairly high among pseudobinary compounds. Both of them are higher than those in NbTi, making future applications promising. Our results suggest that the W $_5$ Si $_3$ -type compounds are ideal platforms to search for new superconductors. By examinations of their band topologies, more candidates for topological superconductors can be expected in this structural family.

preprint2021arXiv

Superconductivity with a Violation of Pauli Limit and Evidences for Multigap in $η$ -Carbide type Ti $_4$ Ir $_2$ O

We report the synthesis, crystal structure, and superconductivity of Ti $_4$ Ir $_2$ O. The title compound crystallizes in an $η$ -carbide type structure of the space group $Fd\overline{3}m$ (No. 227), with lattice parameters $a=b=c=11.6194(1)$ Å. The superconducting $T_c$ is found to be 5.1 $\sim$ 5.7 K. Most surprisingly, Ti $_4$ Ir $_2$ O hosts an upper critical field of 16.45 T, which is far beyond the Pauli paramagnetic limit. Strong coupled superconductivity with evidences for multigap is revealed by the measurements of heat capacity and upper critical field. First-principles calculations suggest that the density of states near the Fermi level originates from the hybridization of Ti-3 $d$ and Ir-5 $d$ orbitals, and the effect of spin-orbit coupling on the Fermi surfaces is prominent. Large values of the Wilson ratio ( $R_W$ $\sim$ 3.9), the Kadowaki-Woods ratio ( $A/γ^2$ $\sim$ 9.0 $\times$ 10 $^{-6}$ $μΩ$ cm/(mJ mol $^{-1}$ K $^{-1}$ ) $^2$ ), and the Sommerfeld coefficient ( $γ$ = 33.74 mJ mol $^{-1}$ K $^{-2}$ ) all suggest strong electron correlations (similar to heavy fermion systems) in Ti $_4$ Ir $_2$ O. The violation of Pauli limit is possibly due to a combination of strong-coupled superconductivity, large spin-orbit scattering, and electron correlation. With these intriguing behaviors, Ti $_4$ Ir $_2$ O serves as a candidate for unconventional superconductor.

preprint2016arXiv

Superconductivity at 7.8 K in the ternary LaRu2As2 compound

Here we report the discovery of superconductivity in the ternary LaRu2As2 compound. The polycrystalline LaRu2As2 samples were synthesized by the conventional solid state reaction method. Powder X-ray diffraction analysis indicates that LaRu2As2 crystallizes in the ThCr2Si2-type crystal structure with the space group I4/mmm (No. 139), and the refined lattice parameters are a = 4.182(6) Å and c = 10.590(3) Å. The temperature dependent resistivity measurement shows a clear superconducting transition with the onset Tc (critical temperature) at 7.8 K, and zero resistivity happens at 6.8 K. The upper critical field at zero temperature m0Hc2(0) was estimated to be 1.6 T from the resistivity measurement. DC magnetic susceptibility measurement shows a bulk superconducting Meissner transition at 7.0 K, and the isothermal magnetization measurement indicates that LaRu2As2 is a type-II superconductor.

preprint2015arXiv

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

The single crystal of ThCr2Si2-type BaPd2As2 was successfully prepared by a self-flux method, and the crystal structure was characterized by X-ray diffraction method with the lattice parameters a = 4.489(2) Å and c = 10.322(3) Å. Bulk superconductivity below a Tc (critical temperature) of 3.85 K was revealed in this compound by the measurements of resistivity, magnetic susceptibility and specific heat, and this Tc is much higher than those of other isostructural Pd-based superconductors.

preprint2014arXiv

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

The layered compound LaOBiSSe was successfully synthesized by a two-step solid-state reaction method, which is isostructural with the quaternary compound LaOBiS2 indicated by the powder X-ray diffraction characterization, and the crystal lattice parameters are slightly expanded by the substitution of Se atoms. Electrical transport measurement shows that LaOBiSSe exhibits semiconducting behavior similar with the parent compound LaOBiS2, while by F-doping the samples can be much more easily turned to be metallic and superconducting at low temperature with a small amount of F. Under the optimal carrier doping concentration of F ~ 0.5, the superconducting critical temperature of LaO0.5F0.5BiSSe is clearly enhanced up to a value of 3.8 K than the 3.2 K of LaO0.5F0.5BiS2.

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Bin-Bin Ruan

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5 publications

Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo $_5$ Si $_3$

Superconductivity with a Violation of Pauli Limit and Evidences for Multigap in $η$ -Carbide type Ti $_4$ Ir $_2$ O

Superconductivity at 7.8 K in the ternary LaRu2As2 compound

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

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Bin-Bin Ruan

Research overview

Is this your work?

5 publications

Strong-Coupling Superconductivity with TcT_cTc​ ∼\sim∼ 10.8 K Induced by P Doping in the Topological Semimetal Mo5_55​Si3_33​

Superconductivity with a Violation of Pauli Limit and Evidences for Multigap in ηηη-Carbide type Ti4_44​Ir2_22​O

Superconductivity at 7.8 K in the ternary LaRu2As2 compound

Superconductivity at 3.85 K in BaPd2As2 with the ThCr2Si2-type structure

Enhanced superconductivity in F-doped LaO1-xFxBiSSe

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Building this map preview

Strong-Coupling Superconductivity with $T_c$ $\sim$ 10.8 K Induced by P Doping in the Topological Semimetal Mo $_5$ Si $_3$

Superconductivity with a Violation of Pauli Limit and Evidences for Multigap in $η$ -Carbide type Ti $_4$ Ir $_2$ O