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Researcher profile

Qin Gao

Qin Gao contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sci

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Published work

4 published item(s)

preprint2013arXiv

First Principles Study of Bismuth Films at Transition Metal Grain Boundaries

Recent experiments suggest that Bi impurities segregate to form bilayer films on Ni and Cu grain boundaries but do not segregate in Fe. To explain these phenomena, we study the total energies of Bi films on transition metal (TM) $Σ$3(111) and $Σ$5(012) GBs using density functional theory. Our results agree with the observed stabilities. We propose a model to predict Bi bilayer stability at Ni GBs which suggests that Bi bilayer is not stable on (111) twist CSL GBs but is stable in most (100) twist CSL GBs. We investigate the interaction and bonding character between Bi and TMs to explain the differences among TMs based on localization of orbitals and magnetism.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

First Principles Study of Bismuth Films on the Nickel(111) Surface

A recent experiment(Bollmann11) suggested that bismuth forms hexagonal close packed (HCP) films on the Ni(111) surface, of heights 3, 5 and 7 layers. A quantum size effect based on free electrons was proposed in explanation. To test this idea, we calculate the total energies of Bi on the Ni(111) surface using density functional theory. We find that HCP film stabilities disagree with the observed odd layer preferences, and the structures are mechanically destabilized by adding capping atoms which pucker the HCP layers. Furthermore, we find that rhombohedral films based on the bulk Bi structure are energetically more favorable than the proposed HCP films. These structures also favor odd numbers of layers, but owing to covalent chemical bonding rather than confinement of free electrons. Specifically, a strongly bound adsorbed surface monolayer forms, followed by bulk-like rhombohedral bilayers.

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preprint2013arXiv

Low-energy Electron Reflectivity from Graphene

Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy range of 0 - 8 eV are found, with the number of minima depending on the number of graphene layers. Using first-principles computations, it is demonstrated that a free standing n-layer graphene slab produces n-1 reflectivity minima. This same result is also found experimentally for graphene supported on SiO2. For graphene bonded onto other substrates it is argued that a similar series of reflectivity minima is expected, although in certain cases an additional minimum occurs, at an energy that depends on the graphene-substrate separation and the effective potential in that space.

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preprint2013arXiv

Low-Energy Electron Reflectivity of Graphene on Copper and other Substrates

The reflectivity of low energy electrons from graphene on copper substrates is studied both experimentally and theoretically. Well-known oscillations in the reflectivity of electrons with energies 0 - 8 eV above the vacuum level are observed in the experiment. These oscillations are reproduced in theory, based on a first-principles density functional description of interlayer states forming for various thicknesses of multilayer graphene. It is demonstrated that n layers of graphene produce a regular series of n-1 minima in the reflectance spectra, together with a possible additional minimum associated with an interlayer state forming between the graphene and the substrate. Both (111) and (001) orientations of the copper substrates are studied. Similarities in their reflectivity spectra arise from the interlayer states, whereas differences are found because of the different Cu band structures along those orientations. Results for graphene on other substrates, including Pt(111) and Ir(111), are also discussed.

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