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Punyashloka Debashis

Punyashloka Debashis contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2020arXiv

Electrically-Tunable Stochasticity for Spin-based Neuromorphic Circuits: Self-Adjusting to Variation

Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal structures in Deep Belief Networks (DBNs), the impact of reducing the Magnetic Tunnel Junction's (MTJ's) energy barrier is assessed and optimized for the resulting stochasticity present in the learning system. This can mitigate the process variation sensitivity of stochastic DBNs which encounter a sharp drop-off when energy barriers exceed near-zero kT. As evaluated for the MNIST dataset for energy barriers at near-zero kT to 2.0 kT in increments of 0.5 kT, it is shown that the stability factor changes by 5 orders of magnitude. The self-compensating circuit developed herein provides a compact, and low complexity approach to mitigating process variation impacts towards practical implementation and fabrication.

preprint2020arXiv

Hardware implementation of Bayesian network building blocks with stochastic spintronic devices

Bayesian networks are powerful statistical models to understand causal relationships in real-world probabilistic problems such as diagnosis, forecasting, computer vision, etc. For systems that involve complex causal dependencies among many variables, the complexity of the associated Bayesian networks become computationally intractable. As a result, direct hardware implementation of these networks is one promising approach to reducing power consumption and execution time. However, the few hardware implementations of Bayesian networks presented in literature rely on deterministic CMOS devices that are not efficient in representing the inherently stochastic variables in a Bayesian network. This work presents an experimental demonstration of a Bayesian network building block implemented with naturally stochastic spintronic devices. These devices are based on nanomagnets with perpendicular magnetic anisotropy, initialized to their hard axes by the spin orbit torque from a heavy metal under-layer utilizing the giant spin Hall effect, enabling stochastic behavior. We construct an electrically interconnected network of two stochastic devices and manipulate the correlations between their states by changing connection weights and biases. By mapping given conditional probability tables to the circuit hardware, we demonstrate that any two node Bayesian networks can be implemented by our stochastic network. We then present the stochastic simulation of an example case of a four node Bayesian network using our proposed device, with parameters taken from the experiment. We view this work as a first step towards the large scale hardware implementation of Bayesian networks.

preprint2019arXiv

Correlated fluctuations in spin orbit torque-coupled perpendicular nanomagnets

Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware platform for unconventional computing paradigms such as probabilistic spin logic. Efficient generation and tunability of high quality random bits is critical for these novel applications. However, current spintronic random number generators are based on superparamagnetic tunnel junctions (SMTJs) with tunability obtained through spin transfer torque (STT), which unavoidably leads to challenges in designing concatenated networks using these two terminal devices. The more recent development of utilizing spin orbit torque (SOT) allows for a three terminal device design, but can only tune in-plane magnetization freely, which is not very energy efficient due to the needs of overcoming a large demagnetization field. In this work, we experimentally demonstrate for the first time, a stochastic device with perpendicular magnetic anisotropy (PMA) that is completely tunable by SOT without the aid of any external magnetic field. Our measurements lead us to hypothesize that a tilted anisotropy might be responsible for the observed tunability. We carry out stochastic Landau-Lifshitz-Gilbert (sLLG) simulations to confirm our experimental observation. Finally, we build an electrically coupled network of two such stochastic nanomagnet based devices and demonstrate that finite correlation or anti-correlation can be established between their output fluctuations by a weak interconnection, despite having a large difference in their natural fluctuation time scale. Simulations based on a newly developed dynamical model for autonomous circuits composed of low barrier nanomagnets show close agreement with the experimental results.