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Pritam Khan

Pritam Khan appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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physics.opticscond-mat.mtrl-sciphysics.app-ph

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Published work

10 published item(s)

preprint2022arXiv

Nonlinear Optical Limiting with Hybrid Nanostructures of NiCo2O4 and Multiwall Carbon Nanotubes

Nonlinear optical (NLO) response in terms of reverse saturable absorption (RSA) has been exploited extensively for optical limiting. Here, we experimentally demonstrate that flower-like hybrid nanostructures of NiCo2O4 and Multiwall Carbon Nanotubes (NCO@MWCNT) exhibit a strong non-linearity in their absorption, specifically an excited state absorption (ESA) induced RSA, when exposed to nanosecond laser pulses. We obtain strong nonlinear absorption coefficient (\b{eta}) and nonlinear refractive index (n2) in hybrid NCO@MWCNT, the values that are 2-times and 2-orders of magnitude higher, respectively compared to NCO or MWCNT alone. This offers straightforward application in optical limiting with optical limiting (FOL) and optical onset (FON) threshold ca. 2-10 times lower than benchmark NLO materials, e.g., graphene, family of 2-D transition metal dichalcogenides (TMDC) materials and recently established NCO. Notably, for femtosecond pumping, NLO response of NCO@MWCNT is dominated by saturable absorption (SA) with a week contribution from two photon absorption (TPA), arising respectively from MWCNT and NCO. A remarkable sign reversal along with a larger amplitude is obtained for n2 thanks to the charge transfer from MWCNT to NCO.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Near resonant nanosecond laser driven nonlinear optical response in As50S50 thin films

Nanosecond near resonant excitation in As50S50 thin films leads to strong nonlinear optical response, i.e. nonlinear absorption coefficient up to 4 x 106 cm/GW and nonlinear refractive index of 8.5 cm2/GW, both of which is the strongest ever reported in amorphous semiconductors. We propose a five-level energy model to explain such effect which indicates that nonlinear process is reverse saturable absorption in nature, mediated by excited state absorption from triplet-triplet transition. On the other hand, observation of negative nonlinear refractive index reveals the occurrence of self-defocusing effect. Finally, benefitting from the strong nonlinear response, we demonstrate a promising application of As50S50 thin films as an optical limiter for optoelectronic sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Role of thermal and photo annealing on nonlinear optical response of Ge30Se55Bi15 thin films

In this article, we employed nanosecond Z-scan technique to demonstrate the nonlinear optical response in Ge30Se55Bi15 thin films after thermal and photo annealing. The intensity dependent open aperture Z-scan traces reveal that for all the samples, i.e. as-prepared, thermal and photo annealed thin films exhibit reverse saturable absorption (RSA). The experimental results indicate that both thermal and photo annealing can be efficiently used to enhance the nonlinear absorption coefficient compared to as-prepared sample. We further demonstrate that beta value of thermally annealed and as-prepared samples increase significantly at higher intensities. On the contrary, beta for photo annealed sample does not exhibit appreciable changes against the intensity variation.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ultrafast Light-driven Simultaneous Excitation of Coherent Terahertz Magnons and Phonons in Multiferroic BiFeO$_3$

The ultrafast switching of magnetization in multiferroic materials by a femtosecond laser could provide various advantages in photonics and magnonics. An efficient approach to control the light matter interaction is the modulation of ultrafast coherent magnons and phonons in the high frequency range. Spontaneous Raman and infrared spectra reveal the excitation of magnons and optical phonons in multiferroic BiFeO3 in the sub few terahertz range. However, coherent control of such quasiparticles has not been achieved yet. In this study, we demonstrate that linearly polarized laser pulses simultaneously excite coherent magnons out of plane and in plane cyclone modes and optical phonon E mode in BiFeO3. Experimental results in conjugation with phenomenological theory, by considering three uniformly distributed magnetic domains reveal that impulsive stimulated Raman scattering is responsible for the generation of coherent magnons and phonons in BiFeO3. The observation of these terahertz magnon and optical phonon modes paves the way for the development of ultrafast magneto electro optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

First observation of temperature dependent lightinduced response of Ge25As10Se65 thin films

Ge rich ternary chalcogenide glasses (ChG) exhibit photobleaching (PB) when illuminated with bandgap light and such an effect is originating from the combined effect of intrinsic structural changes and photo-oxidation. In a sharp contradict to these previous observations, in this letter, we demonstrate for the first time that Ge rich Ge25As10Se65 ChG thin films exhibit photodarkening (PD) at 20 K and PB at 300 and 420 K for continuous illumination of ~ 3 hours. Strikingly, the temporal evolution of PD/PB show distinct characteristics at the temperatures of illumination and provide valuable information on the light induced structural changes. Further, structure specific far infrared (FIR) absorption measurements give direct evidence of different structural units involved in PD/PB at the contrasting temperatures. By comparing the lightinduced effects in vacuum and air, we conclude that intrinsic structural changes dominate over photo-oxidation in the observed PB in Ge25As10Se65 ChG thin films.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Nanosecond light induced, thermally tunable transient dual absorption bands in a-Ge5As30Se65 thin film

In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are thermally tunable and exhibit a unique contrasting characteristic: the magnitude of TA1 decreases while that of TA2 increases with increasing temperature. Further, the decay kinetics of these bands is strongly influenced by the temperature, which signifies a strong temperature-dependent exciton recombination mechanism. The induced absorption shows quadratic and the decay time constant shows linear dependence on the laser beam fluence.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Tailoring between network rigidity and nanosecond transient absorption in a-GexAs35-xSe65 thin films

In this letter, we report the first observation of dramatic decrease in nanosecond (ns) pulsed laser induced transient absorption (TA) in a-GexAs35-xSe65 thin films by tuning the amorphous network from floppy to rigid. Our results provide the direct experimental evidence of a self trapped exciton mechanism, where trapping of the excitons occurs through bond rearrangements. Taken together, a rigid amorphous network with more constraints than degrees of freedom, are unable to undergo any such bond rearrangements and results in weaker TA. However, we also demonstrate that excitation fluence can be effectively utilized as a simple tool to lift up enough constraints to introduce large TA even in rigid networks. Apart from this, we also show that TA is tunable with network rigidity as it blueshift when the mean coordination is increased from 2.35 to 2.6.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films

We experimentally demonstrate the coexistence of two opposite photo-effects, viz. fast photodarkening (PD) and slow photobleaching (PB) in Ge19As21Se60 thin films, when illuminated with a laser of wavelength 671nm, PD appears to begin instantaneously upon light illumination and saturates in tens of seconds. By comparison, PB is a slower process that starts only after PD has saturated. Although we could observe the coexistence of PD/PB even at moderate, one order of magnitude lower intensity of 0.2 W/cm2, the kinetics of transformation is significantly slowed down. However, both PD and PB follow stretched exponetial dependence on time. Modeling of overall change as a linear sum of two contributions suggests that the changes in As and Ge parts of glass network respond to light indepndent of each other.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Role of Ge:As ratio in controlling the light-induced response of a-GexAs35-xSe65 thin films

In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a- GexAs35-xSe65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe3/2 pyramidal and GeSe4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As ratio plays the critical role in controlling the net light-induced response rather than the much believed rigidity of the glassy network.

0 citations0 reviewsNo code linkedOpen access