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Researcher profile

K. V. Adarsh

K. V. Adarsh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
physics.opticscond-mat.mtrl-scicond-mat.mes-hallcond-mat.supr-conquant-ph

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Published work

7 published item(s)

preprint2022arXiv

Nonlinear Optical Limiting with Hybrid Nanostructures of NiCo2O4 and Multiwall Carbon Nanotubes

Nonlinear optical (NLO) response in terms of reverse saturable absorption (RSA) has been exploited extensively for optical limiting. Here, we experimentally demonstrate that flower-like hybrid nanostructures of NiCo2O4 and Multiwall Carbon Nanotubes (NCO@MWCNT) exhibit a strong non-linearity in their absorption, specifically an excited state absorption (ESA) induced RSA, when exposed to nanosecond laser pulses. We obtain strong nonlinear absorption coefficient (\b{eta}) and nonlinear refractive index (n2) in hybrid NCO@MWCNT, the values that are 2-times and 2-orders of magnitude higher, respectively compared to NCO or MWCNT alone. This offers straightforward application in optical limiting with optical limiting (FOL) and optical onset (FON) threshold ca. 2-10 times lower than benchmark NLO materials, e.g., graphene, family of 2-D transition metal dichalcogenides (TMDC) materials and recently established NCO. Notably, for femtosecond pumping, NLO response of NCO@MWCNT is dominated by saturable absorption (SA) with a week contribution from two photon absorption (TPA), arising respectively from MWCNT and NCO. A remarkable sign reversal along with a larger amplitude is obtained for n2 thanks to the charge transfer from MWCNT to NCO.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Strongly bound excitons in monolayer MoSi$_2$Z$_4$ (Z = pnictogen)

Reduced dielectric screening in two-dimensional materials enables bound excitons, which modifies their optical absorption and optoelectronic response even at room temperature. Here, we demonstrate the existence of excitons in the bandgap of the monolayer family of the newly discovered synthetic MoSi$_2$Z$_4$ (Z = N, P, and As) series of materials. All three monolayers support several bright and strongly bound excitons with binding energies varying from 1 eV to 1.35 eV for the lowest energy exciton resonances. On increasing the pump fluence, the exciton binding energies get renormalized, leading to a redshift-blueshift crossover. Our study shows that the MoSi$_2$Z$_4$ series of monolayers offer an exciting test-bed for exploring the physics of strongly bound excitons and their non-equilibrium dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Intriguing electronic and optical prospects of FCC bimetallic two-dimensional heterostructures: epsilon near-zero behaviour in UV-vis range

Higher superconducting critical temperature and large-area epsilon-near-zero interfaces are two long-standing goals of Condensed Matter Physics and Optics. Motivated by the recent advancements of experimental interests on metallic nanostructures, we have theoretically investigated some selected bimetallic FCC combinations starting from large-area interface to embedded and doped two-dimensional (2D) nanostructures. Using different first-principles techniques, encompassing density functional theory (DFT), time-dependent DFT (TDDFT), phonon and DFT-coupled quantum transport, we propose the prospects of some selective bimetallic nanostructures like Au/Ag and Pt/Pd to exhibit exotic electronic phenomena. For 2D doped and embedded nanostructures of these systems, non-trivial band-structure and Fermi-surface topology may be emblematic to the presence of instabilities like charge density waves. We specifically highlight the optical attributes extracted from the TDDFT calculations for these systems, where interfacial morphology induced band-localization leads to near-zero behavior of both real and imaginary parts of the dynamical dielectric response is observed in the ultra-violet to visible (UV-vis) optical range. Low-energy intra-band plasmonic oscillations present for individual metallic surfaces are completely suppressed for embedded and doped nanostructures. Phonon-dispersion of the model systems indicates the presence of soft phonons and dynamical instabilities. Quantum transport calculations on simplest possible device made out of these bimetallic systems reveals generation of highly transmitting pockets over the cross-sectional area for some selected device geometry. We envisage that, if observed experimentally, such systems may lead to many fascinating physics and applications in many diverse fields ranging from condensed matter physics to optics or even more.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Near resonant nanosecond laser driven nonlinear optical response in As50S50 thin films

Nanosecond near resonant excitation in As50S50 thin films leads to strong nonlinear optical response, i.e. nonlinear absorption coefficient up to 4 x 106 cm/GW and nonlinear refractive index of 8.5 cm2/GW, both of which is the strongest ever reported in amorphous semiconductors. We propose a five-level energy model to explain such effect which indicates that nonlinear process is reverse saturable absorption in nature, mediated by excited state absorption from triplet-triplet transition. On the other hand, observation of negative nonlinear refractive index reveals the occurrence of self-defocusing effect. Finally, benefitting from the strong nonlinear response, we demonstrate a promising application of As50S50 thin films as an optical limiter for optoelectronic sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

In this article, we present a comprehensive study of temperature and composition dependent Raman spectroscopy of GexAs35-xSe65 thin films to understand different structural units responsible for optical properties. Strikingly, our experimental results uncover the ratio of GeSe4/2 tetrahedral and AsSe3/2 pyramidal units in GexAs35-xSe65 thin films and their linear scaling relationship with temperature and x. An important notable outcome of our study is the formation of Se8 rings at lower temperatures. Our experimental results further provide interesting optical features, thermally and compositionally tunable optical absorption spectra. Detailed structure specific FIR data at room temperature also present direct information on the structural units in consistent with Raman data. We foresee that our studies are useful in determining the lightinduced response of these films and also for their potential applications in optics and optoelectronics.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films

We experimentally demonstrate the coexistence of two opposite photo-effects, viz. fast photodarkening (PD) and slow photobleaching (PB) in Ge19As21Se60 thin films, when illuminated with a laser of wavelength 671nm, PD appears to begin instantaneously upon light illumination and saturates in tens of seconds. By comparison, PB is a slower process that starts only after PD has saturated. Although we could observe the coexistence of PD/PB even at moderate, one order of magnitude lower intensity of 0.2 W/cm2, the kinetics of transformation is significantly slowed down. However, both PD and PB follow stretched exponetial dependence on time. Modeling of overall change as a linear sum of two contributions suggests that the changes in As and Ge parts of glass network respond to light indepndent of each other.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Role of Ge:As ratio in controlling the light-induced response of a-GexAs35-xSe65 thin films

In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a- GexAs35-xSe65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe3/2 pyramidal and GeSe4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As ratio plays the critical role in controlling the net light-induced response rather than the much believed rigidity of the glassy network.

0 citations0 reviewsNo code linkedOpen access