Researcher profile

Pratap K. Sahoo

Pratap K. Sahoo contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2022arXiv

Defect Controlled Ferromagnetic Ordering in Au Implanted TiSe$_2$ Nanocrystals

Layered transition metal dichalcogenides (TMDs) are attracting increasing attention because they exhibit unconventional magnetic properties due to crystal imperfections in their usually non-magnetic 2D structure. This work aims to investigate the magnetic response of self-engineered Se deficient TiSe$_2$ thin films, synthesized using chemical vapour deposition. We demonstrate tunability of the ferromagnetic order with the introduction of Au atoms using low energy Au ion implantation, which works as a controlling knob to vary the stoichiometry of Se in TiSe$_{2-x}$. The corresponding isothermal field-magnetization curves fit well with a modified Brillouin J function with J value of 1.5 for Ti$^{3+}$, and 4 for Au$^{3+}$, accounting for the diamagnetism that arises from Au implantation. We propose a qualitative model for the experimentally observed magnetization as a function of ion fluence, corroborated with high-resolution transmission electron microscopy. Depending on the Au nanoparticle size in the implanted samples, magnetization saturates faster at a much lower applied magnetic field than the pristine sample. Our findings hold potential to expand the range of 2D ferromagnetic materials for spintronics and magnetic sensing applications.

preprint2022arXiv

Defect Modulated Band Modification in Ion Implanted MgO Crystal: Experimental and Ab Initio Calculations

Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion implantation on MgO single crystal produces substitutional defect states along with F (anionic vacancy center), $F_2$, other oxygen vacancy center and V (cationic vacancy center) centers confirmed from absorption and photoluminescence spectra that can be applied as filament in valance charge memory based resistive random access memories. The variation of optical bandgap with Ni ion fluences is ascertained by modifying the electronic band structure. Density Functional Theory (DFT) calculation assists in understanding the evolution of electronic band structure for vacancies and substitutional defects consisting of MgO structures.

preprint2022arXiv

Impact of Pauli-blocking effect on optical limiting properties of WSe2 thin films

We present a detailed investigation on thickness-dependent third-order (\c{hi}^(3)) nonlinear optical properties of RF-sputtered WSe2 thin-films using ultrashort pulses centered at different excitation wavelengths. The single-beam Z-scan based investigation in the visible spectrum reveals the prominent role of Pauli-blocking towards inducing saturable absorption or optical limiting in WSe2 thin-films of various thicknesses. The study also explores the dispersion in third-order nonlinear susceptibility (\c{hi}^(3)) in WSe2 thin films. Interestingly, WSe2 thin-films of any thickness exhibit a self-focusing effect depicting a positive nonlinear refractive index (n2 > 0). The frequency-dependent nonlinear absorption (\b{eta}) bear distinct correlations with the bandgap of the films which is also investigated through density-functional-theory (DFT) based simulations. The alteration in bandstructure is primarily due to the Se-deficiency induced defect bands in WSe2 thin-films which has discernible impact on the optical limiting characteristics.