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Ashis K. Nandy

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3 publications

preprint2026arXiv

Emergence of a hidden-order phase well below the charge density wave transition in a topological Weyl semimetal (TaSe4_4)2_2I

The emergence of a charge density wave (CDW) in a Weyl semimetal -- a correlated topological phase, is exceptionally rare in condensed matter systems. In this context, the quasi-one-dimensional type-III Weyl semimetal (TaSe4_4)2_2I undergoes a CDW transition at TCDW≈263T_{\mathrm{CDW}} \approx 263~K, providing an exceptional platform to investigate correlated topological CDW states. Here, we uncover an additional hidden-order phase transition at T∗∼100T^* \sim 100 K, well below the CDW onset, using low-frequency resistance noise spectroscopy, electrical transport, and thermoelectric measurements. This transition is characterized by a sharp enhancement in the noise exponent (αα) and variance of resistance fluctuations. Analysis of higher-order statistics of resistance fluctuations reveals the correlated dynamics underlying the transition. A pronounced anomaly in the Seebeck coefficient near T∗T^* further suggests a Fermi surface reconstruction. First-principles calculations reveal a structural distortion from the high-symmetry I422I422 phase to a low-symmetry C2C2 phase, via an intermediate I4I4 symmetry. This leads to renormalization of the electronic structure near the Fermi level and opening of a bandgap in the hidden-order phase. These findings demonstrate a previously unidentified correlated phase transition in the topological CDW-Weyl semimetal (TaSe4_4)2_2I, enriching the phase diagram of this material and establishing it as an ideal platform for studying intertwined electronic and structural orders.

preprint2022arXiv

Defect Modulated Band Modification in Ion Implanted MgO Crystal: Experimental and Ab Initio Calculations

Defects creation and annihilation is a fundamental concept in device fabrication. This report studies the optical bandgap modification in MgO by MeV Ni ion irradiation-induced defect states between valance and conduction band. Ion implantation on MgO single crystal produces substitutional defect states along with F (anionic vacancy center), F2F_2, other oxygen vacancy center and V (cationic vacancy center) centers confirmed from absorption and photoluminescence spectra that can be applied as filament in valance charge memory based resistive random access memories. The variation of optical bandgap with Ni ion fluences is ascertained by modifying the electronic band structure. Density Functional Theory (DFT) calculation assists in understanding the evolution of electronic band structure for vacancies and substitutional defects consisting of MgO structures.

preprint2022arXiv

Microscopic Origin Of Room Temperature Ferromagnetism in a Double Perovskite Sr2_2FeReO6_6: a first principle and model Hamiltonian study

The puzzling observation of room temperature ferromagnetism in double perovskites (A2_2BB′'O6_6), despite having the magnetic lattice of B-ions diluted by non-magnetic B′'-ions, have been examined for Sr2_2FeReO6_6. {\it Ab-initio} spin spiral electronic structure calculations along various high symmetry directions in reciprocal space are used to determine the exchange interactions entering an extended Heisenberg model, which is then solved classically using Monte Carlo simulations to determine the ferromagnetic transition temperature Tc_c. We find that one must consider onsite Coulomb interactions at the nonmagnetic Re sites (UU) in order to obtain a Tc_c close to the experimental value. Analysis of the abab-initioinitio electronic structure as well as an appropriate model Hamiltonian trace the origin of enhancement in Tc_c with UU to the enhanced exchange splitting that is introduced at these sites. This in turn destabilizes the antiferromagnetic exchange channels, thereby enhancing the Tc_c. The role of occupancy at the non-magnetic sites is examined by contrasting with the case of Sr2_2FeMoO6_6.

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