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Researcher profile

Plamen Stamenov

Plamen Stamenov contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-sciastro-ph.IMcond-mat.supr-conphysics.app-phphysics.ins-det

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Published work

4 published item(s)

preprint2023arXiv

Ab initio comparison of spin-transport properties in MgO-spaced ferrimagnetic tunnel junctions based on Mn$_3$Ga and Mn$_3$Al

We report on first-principles spin-polarised quantum transport calculations (from NEGF+DFT) in MgO-spaced magnetic tunnel junctions (MTJs) based on two different Mn-based Heusler ferrimagnetic metals, namely Mn$_3$Al and Mn$_3$Ga in their tetragonal DO$_{22}$ phase. The former is a fully compensated half-metallic ferrimagnet, while the latter is a low-moment high-spin-polarisation ferrimagnet, both with a small lattice mismatch from MgO. In identical symmetric and asymmetric interface reconstructions across a 3-monolayer thick MgO barrier for both ferrimagets, the linear response (low-voltage) spin-transfer torque (STT) and tunneling magneto-resistance (TMR) effects are evaluated. A larger staggered in-plane STT is found in the Mn$_3$Ga case, while the STT in Mn$_3$Al vanishes quickly away from the interface (similarly to STT in ferromagnetic MTJs). The roles are reversed for the TMR, which is practically 100\% in the half-metallic Mn$_3$Al-based MTJs (using the conservative definition) as opposed to 60\% in the Mn$_3$Ga case. The weak dependence on the exact interface reconstruction would suggest Mn$_3$Ga-Mn$_3$Al solid solutions as a possible route towards optimal trade-off of STT and TMR in the low-bias, low-temperature transport regime.

0 citations0 reviewsNo code linkedOpen access
preprint2023arXiv

CoRuVSi: A potential candidate for spin semimetal with promising spintronic and thermoelectric properties

Based on our experimental and theoretical studies, we report the identification of the quaternary Heusler alloy, CoRuVSi as a new member of the recently discovered spin semimetals class. Spin polarised semimetals possess a unique band structure in which one of the spin bands shows semimetallic nature, while the other shows semiconducting/insulating nature. Our findings show that CoRuVSi possesses interesting spintronic and thermoelectric properties. Magnetization data reveal a weak ferri-/antiferro magnetic ordering at low temperatures, with only a very small moment $\sim$ 0.13 $μ_B$/f.u., attributed to the disorder. Transport results provide strong evidence of semimetallicity dominated by two-band conduction, while magnetoresistance data show a non-saturating, linear, positive, magnetoresistance. Spin polarization measurements using point-contact Andreev reflection spectra reveal a reasonably high spin polarization of $\sim$ 50\%, which matches fairly well with the simulated result. Furthermore, CoRuVSi shows a high thermopower value of $0.7$ $m Watt/ m-K^{2}$ at room temperature with the dominant contribution from the semimetallic bands, rendering it as a promising thermoelectric material as well. Our ab-initio simulation not only confirms a unique semimetallic feature, but also reveals that the band structure hosts a linear band crossing at $\sim$ -0.4 eV below the Fermi level incorporated by a band-inversion. In addition, the observed topological non-trivial features of the band structure is corroborated with the simulated Berry curvature, intrinsic anomalous Hall conductivity and the Fermi surface. The coexistence of many interesting properties relevant for spintronic, topological and thermoelectric applications in a single material is extremely rare and hence this study could promote a similar strategy to identify other potential materials belonging to same class.

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preprint2022arXiv

Multiplexable frequency retuning of MKID arrays using their non-linear kinetic inductance

Microwave Kinetic Inductance Detector (MKID) arrays are currently being developed and deployed for astronomical applications in the visible and near infrared and for sub-millimetre astronomy. One of the main drawbacks of MKIDs is that large arrays would exhibit a pixel yield, the percentage of individually distinguishable pixels to the total number of pixels, of 75 - 80 %. Imperfections arising during the fabrication can induce an uncontrolled shift in the resonance frequency of individual resonators which can end up resonating at the same frequency of a different resonator. This makes a number of resonators indistinguishable and therefore unusable for imaging. This paper proposes an approach to individually re-tune the colliding resonators in order to remove the degeneracy and increase the number of MKIDs with unique resonant frequencies. The frequency re-tuning is achieved through a DC bias of the resonator, the kinetic inductance of a superconducting thin film is current dependent and its dependence is non linear. Even though this approach has been already proposed, an innovative pixel design, described in this paper, may solve two issues previously described in literature such as increased electromagnetic losses to the DC-bias line, and the multiplexibility of multiple resonators on a single feedline.

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preprint2022arXiv

Spin transfer torque in Mn$_3$Ga-based ferrimagnetic tunnel junctions from first principles

We report on first-principles calculations of spin-transfer torque (STT) in epitaxial magnetic tunnel junctions (MTJs) based on ferrimagnetic tetragonal Mn$_3$Ga electrodes, both as analyzer in an Fe/MgO stack, and also in an analogous stack with a second Mn$_3$Ga electrode (instead of Fe) as polarizer. Solving the ballistic transport problem (NEGF + DFT) for the nonequilibrium spin density in a scattering region extended to over 7.6 nm into the Mn$_3$Ga electrode, we find long-range spatial oscillations of the STT decaying on a length scale of a few tens of angstroms, both in the linear response regime and for finite bias. The oscillatory behavior of the STT in Mn$_3$Ga is robust against variations in the stack geometry and the applied bias voltage, which may affect the phase and the amplitude of the spatial oscillation, but the wave number is only responsive to variations in the longitudinal lattice constant of Mn$_3$Ga (for fixed in-plane geometry) without being commensurate with the lattice. Our interpretation of the long-range STT oscillations is based on the bulk electronic structure of Mn$_3$Ga, taking also into account the spin-filtering properties of the MgO barrier. Comparison to a fully Mn$_3$Ga-based stack shows similar STT oscillations, but a significant enhancement of both the TMR effect at the Fermi level and the STT at the interface, due to resonant tunneling for the mirror-symmetric junction with thinner barrier (three monoatomic layers). From the calculated energy dependence of the spin-polarized transmissions at 0 V, we anticipate asymmetric or symmetric TMR as a function of the applied bias voltage for the Fe-based and the all-Mn$_3$Ga stacks, respectively, which also both exhibit a sign change below 1 V. In the latter (symmetric) case we expect a TMR peak at zero, which is larger for the thinner barriers because of a spin-polarized resonant tunneling contribution.

0 citations0 reviewsNo code linkedOpen access