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Researcher profile

Philippe Andreucci

Philippe Andreucci contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallphysics.ins-detcond-mat.mtrl-sciquant-ph

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Published work

3 published item(s)

preprint2010arXiv

Compact and explicit physical model for lateral metal-oxide-semiconductor field-effect transistor with nanoelectromechanical system based resonant gate

We propose a simple analytical model of a metal-oxide-semiconductor field-effect transistor with a lateral resonant gate based on the coupled electromechanical equations, which are self-consistently solved in time. All charge densities according to the mechanical oscillations are evaluated. The only input parameters are the physical characteristics of the device. No extra mathematical parameters are used to fit the experimental results. Theoretical results are in good agreement with the experimental data in static and dynamic operation. Our model is comprehensive and may be suitable for any electromechanical device based on the field-effect transduction.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

In-plane nanoelectromechanical resonators based on silicon nanowire piezoresistive detection

We report an actuation/detection scheme with a top-down nano-electromechanical system for frequency shift-based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS compatible. The results show a very large dynamic range (DR) of more than 100dB and an unprecedented signal to background ratio (SBR) of 69dB providing an improvement of two orders of magnitude in the detection efficiency presented in the state of the art in NEMS field. Such a dynamic range results from both negligible 1/f-noise and very low Johnson noise compared to the thermomechanical noise. This simple low-power detection scheme paves the way for new class of robust mass resonant sensor.

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preprint2010arXiv

Self-oscillation conditions of a resonant-nano-electromechanical mass sensor

This article presents a comprehensive study and design methodology of co-integrated oscillators for nano mass sensing application based on resonant Nano-Electro-Mechanical-System (NEMS). In particular, it reports the capacitive with the piezoresistive transduction schemes in terms of the overall sensor performance. The developed model is clearly in accordance with the general experimental observations obtained for NEMS-based mass detection. The piezoresistive devices are much sensitive (up to 10 zg/?Hz) than capacitive ones (close to 100 zg/?Hz) since they can work at higher frequency. Moreover, the high doped silicon piezoresistive gauge, which is of a great interest for very large scale integration displays similar theoretical resolution than the metallic gauge already used experimentally.

0 citations0 reviewsNo code linkedOpen access