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Peter Werner

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Published work

8 published item(s)

preprint2026arXiv

Approximately Optimal Global Planning for Contact-Rich SE(2) Manipulation on a Graph of Reachable Sets

If we consider human manipulation, it is clear that contact-rich manipulation (CRM)-the ability to use any surface of the manipulator to make contact with objects-can be far more efficient and natural than relying solely on end-effectors (i.e., fingertips). However, state-of-the-art model-based planners for CRM are still focused on feasibility rather than optimality, limiting their ability to fully exploit CRM's advantages. We introduce a new paradigm that computes approximately optimal manipulator plans. This approach has two phases. Offline, we construct a graph of mutual reachable sets, where each set contains all object orientations reachable from a starting object orientation and grasp. Online, we plan over this graph, effectively computing and sequencing local plans for globally optimized motion. On a challenging, representative contact-rich task, our approach outperforms a leading planner, reducing task cost by 61%. It also achieves a 91% success rate across 250 queries and maintains sub-minute query times, ultimately demonstrating that globally optimized contact-rich manipulation is now practical for real-world tasks.

preprint2022arXiv

A Software Tool for "Gluing" Distributions

When performing Monte-Carlo simulations, distributions are sometimes determined only for sub-intervals of the desired total range. In such cases, a frequent problem is to connect, or glue, individual distributions to obtain the final result. Most prominent examples, where this is usually necessary, are certain large-deviation simulation techniques. However, there are multiple approaches to do this, depending on the data and individual requirements. Here, a software tool is presented, containing multiple algorithms, to aid with this task. An introduction to the available methods is presented together with a short tutorial using exemplary data.

preprint2022arXiv

Finding and Optimizing Certified, Collision-Free Regions in Configuration Space for Robot Manipulators

Configuration space (C-space) has played a central role in collision-free motion planning, particularly for robot manipulators. While it is possible to check for collisions at a point using standard algorithms, to date no practical method exists for computing collision-free C-space regions with rigorous certificates due to the complexities of mapping task-space obstacles through the kinematics. In this work, we present the first to our knowledge method for generating such regions and certificates through convex optimization. Our method, called C-Iris (C-space Iterative Regional Inflation by Semidefinite programming), generates large, convex polytopes in a rational parametrization of the configuration space which are guaranteed to be collision-free. Such regions have been shown to be useful for both optimization-based and randomized motion planning. Our regions are generated by alternating between two convex optimization problems: (1) a simultaneous search for a maximal-volume ellipse inscribed in a given polytope and a certificate that the polytope is collision-free and (2) a maximal expansion of the polytope away from the ellipse which does not violate the certificate. The volume of the ellipse and size of the polytope are allowed to grow over several iterations while being collision-free by construction. Our method works in arbitrary dimensions, only makes assumptions about the convexity of the obstacles in the task space, and scales to realistic problems in manipulation. We demonstrate our algorithm's ability to fill a non-trivial amount of collision-free C-space in a 3-DOF example where the C-space can be visualized, as well as the scalability of our algorithm on a 7-DOF KUKA iiwa and a 12-DOF bimanual manipulator.

preprint2019arXiv

Anomalous and topological Hall effects in epitaxial thin films of the noncollinear antiferromagnet Mn$_{3}$Sn

Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous epitaxial thin films of such a material, Mn$_{3}$Sn, and characterize their crystal structure using a combination of x-ray diffraction and transmission electron microscopy. Growth of Mn$_{3}$Sn films with both (0001) c-axis orientation and (40$\bar{4}$3) texture is achieved. In the latter case, the thin films exhibit a small uncompensated Mn moment in the basal plane, quantified via magnetometry and x-ray magnetic circular dichroism experiments. This cannot account for the large anomalous Hall effect simultaneously observed in these films, even at room temperature, with magnitude $σ_{\mathrm{xy}}$ ($μ_{0}H$ = 0 T) = 21 $\mathrmΩ^{-1}\mathrm{cm}^{-1}$ and coercive field $μ_{0}H_{\mathrm{C}}$ = 1.3 T. We attribute the origin of this anomalous Hall effect to momentum-space Berry curvature arising from the symmetry-breaking inverse triangular spin structure of Mn$_{3}$Sn. Upon cooling through the transition to a glassy ferromagnetic state at around 50 K, a peak in the Hall resistivity close to the coercive field indicates the onset of a topological Hall effect contribution, due to the emergence of a scalar spin chirality generating a real-space Berry phase. We demonstrate that the polarity of this topological Hall effect, and hence the chiral-nature of the noncoplanar magnetic structure driving it, can be controlled using different field cooling conditions.

preprint2016arXiv

Superconductivity in Weyl Semimetal Candidate MoTe2

In recent years, layered transition-metal dichalcogenides (TMDs) have attracted considerable attention because of their rich physics; for example, these materials exhibit superconductivity, charge density waves, and the valley Hall effect. As a result, TMDs have promising potential applications in electronics, catalysis, and spintronics. Despite the fact that the majority of related research focuses on semiconducting TMDs (e.g., MoS2), the characteristics of WTe2 are provoking strong interest in semimetallic TMDs with extremely large magnetoresistance, pressure-driven superconductivity, and the predicted Weyl semimetal (WSM) state. In this work, we investigate the sister compound of WTe2, MoTe2, which is also predicted to be a WSM and a quantum spin Hall insulator in bulk and monolayer form, respectively. We find that MoTe2 exhibits superconductivity with a resistive transition temperature Tc of 0.1 K. The application of a small pressure (such as 0.4 GPa) is shown to dramatically enhance the Tc, with a maximum value of 8.2 K being obtained at 11.7 GPa (a more than 80-fold increase in Tc). This yields a dome-shaped superconducting phase diagram. Further explorations into the nature of the superconductivity in this system may provide insights into the interplay between strong correlations and topological physics.

preprint2015arXiv

Ellipsometry studies of Si/Ge superlattices with embedded Ge dots

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <111> crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using interdiffusion/intermixing model by assuming a multicrystalline Si and Si1-xGex intermixing layers. The electronic transitions deduced from analysis reveal Si, Ge and alloying related critical energy points.

preprint2015arXiv

Near-IR photoluminescence from Si/Ge nanowire grown silicon wafers: effect of HF treatment

We present the room temperature (RT) near-infrared (NIR) photoluminescence (PL) properties of Si/Ge nanowire (NW) grown silicon wafers which were treated by vapor of HF:HNO3 chemical mixture. This treatment activates or enhances the PL intensity at NIR region ranging from 1000 nm to 1800 nm. The PL consists of a silicon band-edge emission and a broad composite band which was centered at around 1400-1600 nm. The treatment modifies the wafer surface particularly at defect sites particularly pits around NWs and NW surfaces by etching and oxidation of Si and Ge. This process can induce spatial confinement of carriers where band-to-band (BB) emission is the dominant property in Si capped strained Si/Ge NW grown wafers. Strong signals were observed at sub-band gap energies in Ge capped Si/Ge NW grown wafers. It was found that NIR PL is a competitive property between the Si BB transition and deep-level emission which is mainly attributable to Si related defects, Ge dots and strained Ge layers. The enhancement in BB and deep-level PL was discussed in terms of strain, oxygen related defects, dots formation and carrier confinement effects. The results demonstrate the effectiveness of this method in enhancing and tuning NIR PL properties for possible applications.

preprint2015arXiv

Photoluminescence from Silicon nanoparticles embedded in ammonium silicon hexafluoride

Silicon (Si) nanoparticles (NPs) were synthesized by transforming Si wafer surface to ammonium silicon hexafluoride (ASH) or (NH4)2SiF6 under acid vapor treatment. Si-NPs are embedded within the polycrystalline (ASH) layer formed on the Si surface exhibit a strong green-orange photoluminescence (PL). Difference measurements revealed a major double component spectra consisting of a broad band associated with the ASH-Si wafer interfacial porous oxide layer and a high energy band attributable to Si-NPs embedded in the ASH. The origin of the latter emission can be explained in terms of quantum/spatial confinement effects probably mediated by oxygen related defects in or around Si-NPs. Although Si-NPs are derived from the interface they are much smaller in size than those embedded within the interfacial porous oxide layer (SiOx, 1 < x < 2). Transmission electron microscopy (TEM) combined with Raman scattering and Fourier transformed infrared (FTIR) analysis confirmed the presence of Si-NPs and Si-O bondings pointing to the role of oxygen related defects. The presence of oxygen of up to 4.5 at.% in the (NH4)2SiF6 layer was confirmed by energy dispersive spectroscopy (EDS) analysis.