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Pengcheng Chen

Pengcheng Chen appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.str-eleess.SPInformation Theorymath.ITphysics.chem-phphysics.optics

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Published work

9 published item(s)

preprint2023arXiv

Sum-Rate Maximization in Active RIS-Assisted Multi-Antenna WPCN

In this paper, we propose an active reconfigurable intelligent surface (RIS) enabled hybrid relaying scheme for a multi-antenna wireless powered communication network (WPCN), where the active RIS is employed to assist both wireless energy transfer (WET) from the power station (PS) to energy-constrained users and wireless information transmission (WIT) from users to the receiving station (RS). For further performance enhancement, we propose to employ both transmit beamforming at the PS and receive beamforming at the RS. We formulate a sum-rate maximization problem by jointly optimizing the RIS phase shifts and amplitude reflection coefficients for both the WET and the WIT, transmit and receive beamforming vectors, and network resource allocation. To solve this non-convex problem, we propose an efficient alternating optimization algorithm with linear minimum mean squared error criterion, semi-definite relaxation (SDR) and successive convex approximation techniques. Specifically, the tightness of applying the SDR is proved. Simulation results demonstrate that our proposed scheme with 10 reflecting elements (REs) and 4 antennas can achieve 17.78% and 415.48% performance gains compared to the single-antenna scheme with 10 REs and passive RIS scheme with 100 REs, respectively.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Generations of high efficiency, high purity, and broadband Laguerre-Gaussian modes from a Janus optical parametric oscillator

Laguerre-Gaussian (LG) modes, carrying orbital angular momentum of light, are critical for important applications such as high-capacity optical communications, super-resolution imaging, and multi-dimensional quantum entanglement. Advanced developments in these applications strongly demand reliable and tunable LG mode laser sources, which, however, do not yet exist. Here, we experimentally demonstrate highly-efficient, highly-pure, broadly-tunable, and topological-charge-controllable LG modes from a Janus optical parametric oscillator (OPO). Janus OPO featuring two-face cavity mode is designed to guarantee an efficient evolution from a Gaussian-shaped fundamental pumping mode to a desired LG parametric mode. The output LG mode has a tunable wavelength between 1.5 um and 1.6 um with a conversion efficiency above 15%, a topological charge switchable from -4 to 4, and a mode purity as high as 97%, which provides a high-performance solid-state light source for high-end demands in multi-dimensional multiplexing/demultiplexing, control of spin-orbital coupling between light and atoms, and so on.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Probing Image Potential States on Topological Semimetal Antimony Surface

A point charge near the surface of a topological insulator (TI) with broken time-reversal symmetry is predicted to generate an image magnetic charge in addition to an image electric charge. We use scanning tunneling spectroscopy to study the image potential states (IPS) of the topological semimetal Sb(111) surface. We observe five IPS with discrete energy levels that are well described by a one-dimensional model. The spatial variation of the IPS energies and lifetimes near surface step edges shows the first local signature of resonant interband scattering between IPS, which suggests that image charges too may interact. Our work motivates the exploration of the TI surface geometry necessary to realize and manipulate a magnetic charge.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Imaging emergent heavy Dirac fermions of a topological Kondo insulator

Kondo insulators are primary candidates in the search for strongly correlated topological quantum phases, which may host topological order, fractionalization, and non-Abelian statistics. Within some Kondo insulators, the hybridization gap is predicted to protect a nontrivial topological invariant and to harbor emergent heavy Dirac fermion surface modes. We use high-energy-resolution spectroscopic imaging in real and momentum space on the Kondo insulator, SmB$_6$. On cooling through $T^*_Δ\approx$ 35 K we observe the opening of an insulating gap that expands to $Δ\approx$ 10 meV at 2 K. Within the gap, we image the formation of linearly dispersing surface states with effective masses reaching $m^* = (410\pm20)m_e$. We thus demonstrate existence of a strongly correlated topological Kondo insulator phase hosting the heaviest known Dirac fermions.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Effects of ferroelectric polarization on surface phase diagram: an evolutionary algorithm study of the BaTiO$_{3}$(001) surface

We have constructed the surface phase diagram of the BaTiO$_{3}$(001) surface by employing an evolutionary algorithm for surface structure prediction, where the ferroelectric polarization is included as a degree of freedom. Among over 1000 candidate structures explored, a surface reconstruction of (2$\times$1)-TiO is discovered to be thermodynamically stable and have the \emph{p2mm} plane group symmetry as observed experimentally. We find that the influence of ferroelectric polarization on the surface free energy can be either negligibly small or sizably large (over 1 eV per ($2 \times 1$) supercell), depending strongly on the surface structure and resulting in a significant distinction of surface phase diagram with varying ferroelectric polarization. It is therefore feasible to control the surface stability by applying an external electric field. Our results may have important implications in understanding the surface reconstruction of ferroelectric materials and tuning surface properties.

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preprint2015arXiv

High-$T_c$ $d^{0}$ ferromagnetism in a doped Mott insulator: the case of hydrogenated epitaxial graphene on SiC(0001)

We show that the $d^{0}$ ferromagnetism with high Curie temperature ($T_c$) can be achieved in the electron doped hydrogenated epitaxial graphene on some certain SiC substrates through first-principles calculations. The pristine systems are found to be a Mott insulator independent of SiC polytypes (2$H$, 4$H$ or 6$H$) which, however, play a significant role in the modulation of magnetic interaction. Carrier doping enhances the ferromagnetic coupling due to the double exchange mechanism and thus realizes the phase transition from antiferromagnetism to ferromagnetism. A $T_c$ of around 400 K is predicted on the 2$H$-SiC. We employ a non-degenerate Hubbard model to demonstrate how the SiC affects the interfacial magnetism in intra-atomic Coulomb repulsion and intersite hopping interactions.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a chiral boundary

Monolayer lateral heterostructure of graphene and hexagonal boron nitride (h-BNC) has attracted a growing attention mainly due to its tunable band-gap character and unique physical properties at interface. Hereby, we reported the first-time synthesis of a nearly freestanding h-BNC hybrid on a weakly coupled substrate of Ir (111), where graphene and h-BN possessing different surface heights and corrugations formed a perfect monolayer hybrid. With the aid of scanning tunneling microscopy/spectroscopy (STM/STS), we demonstrated that h-BN can patch alongside the boundary of pre-deposited graphene domains and vice versa to form a seamless monolayer hybrid, with the realization of predominant zigzag type chiral boundaries at the interface. Density-functional theory calculations and STM/STS measurements aided us to reveal that this interface between graphene and h-BN were atomically sharp in aspects of the chemical bonding as well as the local electronic property from both theoretical and experimental points of view.

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preprint2014arXiv

Stable two-dimensional dumbbell stanene: a quantum spin Hall insulator

We predict from first-principles calculations a novel structure of stanene with dumbbell units (DB), and show that it is a two-dimensional topological insulator with inverted band gap which can be tuned by compressive strain. Furthermore, we propose that the boron nitride sheet and reconstructed ($2\times2$) InSb(111) surfaces are ideal substrates for the experimental realization of DB stanene, maintaining its non-trivial topology. Combined with standard semiconductor technologies, such as magnetic doping and electrical gating, the quantum anomalous Hall effect, Chern half metallicity and topological superconductivity can be realized in DB stanene on those substrates. These properties make the two-dimensional supported stanene a good platform for the study of new quantum spin Hall insulator as well as other exotic quantum states of matter.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Dirac Fermion in Strongly-Bound Graphene Systems

It is highly desirable to integrate graphene into existing semiconductor technology, where the combined system is thermodynamically stable yet maintain a Dirac cone at the Fermi level. Firstprinciples calculations reveal that a certain transition metal (TM) intercalated graphene/SiC(0001), such as the strongly-bound graphene/intercalated-Mn/SiC, could be such a system. Different from free-standing graphene, the hybridization between graphene and Mn/SiC leads to the formation of a dispersive Dirac cone of primarily TM d characters. The corresponding Dirac spectrum is still isotropic, and the transport behavior is nearly identical to that of free-standing graphene for a bias as large as 0.6 V, except that the Fermi velocity is half that of graphene. A simple model Hamiltonian is developed to qualitatively account for the physics of the transfer of the Dirac cone from a dispersive system (e.g., graphene) to an originally non-dispersive system (e.g., TM).

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