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Researcher profile

Peng Lv

Peng Lv contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scinucl-thquant-ph

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Published work

5 published item(s)

preprint2022arXiv

QCSH: a Full Quantum Computer Nuclear Shell-Model Package

Nucleus is a typical many-body quantum system. Full calculation of a nuclear system in a classical computer is far beyond the capacity of current classical computers. With fast development of hardware, the prospect of using quantum computers in nuclear physics is closing. Here, we report a full quantum package, QCSH, for solving nuclear shell-model in a quantum computer. QCSH uses the linear combination of unitaries formalism of quantum computing, and performs all calculations in a quantum computer. The complexities of qubit resource, number of basic gates of QCSH, are both polynomial to the nuclear size. QCSH can already provide meaningful results in the near term. As examples, the binding energies of twelve light nuclei, $^{2}$H, $^{3}$H, $^{3}$He, $^{4}$He, $^{6}$Li, $^{7}$Li, $^{12}$C, $^{14}$N, $^{16}$O, $^{17}$O, $^{23}$Na and $^{40}$Ca are calculated using QCSH in a classical quantum emulator. The binding energy of Deuteron has already been experimentally studied using QCSH on a superconducting quantum computing device. QCSH not only works in near-term quantum devices, but also in future large-scale quantum computers. With the development of quantum devices, nuclear system constitutes another promising area for demonstrating practical quantum advantage.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Conductive Domain Walls in Non-Oxide Ferroelectrics Sn2P2S6

The conductive domain wall (CDW) is extensively investigated in ferroelectrics, which can be considered as a quasi-two-dimensional reconfigurable conducting channel embedded into an insulating material. Therefore, it is highly important for the application of ferroelectric nanoelectronics. Hitherto, most CDW investigations are restricted in oxides, and limited work has been reported in non-oxides to the contrary. Here, by successfully synthesizing the non-oxide ferroelectric Sn2P2S6 single crystal, we observed and confirmed the domain wall conductivity by using different scanning probe techniques which origins from the nature of inclined domain walls. Moreover, the domains separated by CDW also exhibit distinguishable electrical conductivity due to the interfacial polarization charge with opposite signs. The result provides a novel platform for understanding electrical conductivity behavior of the domains and domain walls in non-oxide ferroelectrics.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Ferroelastic switching with van der Waals direction transformation in layered PdSe2 driven by uniaxial and shear strain

Uniaxial and biaxial strain approaches are usually implemented to switch the ferroelastic states, which play a key role in the application of the ferroics and shape memory materials. In this work, by using the first-principles calculations, we found not only uniaxial strain, but also shear strain can induce a novel ferroelastic switching, in which the van der Waals (vdW) layered direction rotates with the ferroelastic transition in layered bulk PdSe2. The shear strain induces ferroelastic switching with three times amplitude smaller than uniaxial strain. The novel three-states ferroelastic switching in layered PdSe2 also occurs under shear strain. Our result shows that the shear strain could be used as an effective approach for manipulating the functionalities of layered materials in potential device applications.

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preprint2019arXiv

Spontaneous photo-generated carrier separation of SnO/BiOX (X=Cl, Br, I) bilayer under visible light irradiation for water splitting

Alloying in 2D materials plays a more and more important role due to wide range bandgap tunability and integrating the advantages of HER and OER. Here, the novel bilayers of SnO/BiOX (X= Cl, Br and I) bilayer are constructed to integrate the advantages of narrow bandgap and separating photo-generated carriers. The bandgap of the bilayers can be tuned from 1.09 to 1.84 eV, remarkably improving the utilization of solar energy. The large difference in effective masses and built-in electric field effectively hamper the fast recombination of photo-generated carries, which highly enhances the photocatalytic efficiency. Besides that, the type-II band alignment guarantee the two half reactions could occur at different surfaces. Moreover, the optical absorption (the strong transition between band edges and high joint density of states) and band-edge level further confirm the SnO/BiOX (X= Cl and Br) bilayer is a promising candidate for overall water-splitting.

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preprint2019arXiv

Thickness-dependent in-plane polarization and structural phase transition in van der Waals Ferroelectric CuInP2S6

Van der Waals (vdW) layered materials have rather weaker interlayer bonding than the intra-layer bonding, therefore the exfoliation along the stacking direction enables the achievement of monolayer or few layers vdW materials with emerging novel physical properties and functionalities. The ferroelectricity in vdW materials recently attracts renewed interest for the potential use in high-density storage devices. As the thickness going thinner, the competition between the surface energy, depolarization field and interfacial chemical bonds may give rise to the modification of ferroelectricity and crystalline structure, which has limited investigations. In this work, combining the piezoresponse force microscope scanning, contact resonance imaging, we report the existence of the intrinsic in-plane polarization in vdW ferroelectrics CuInP2S6 (CIPS) single crystals, whereas below a critical thickness between 90-100 nm, the in-plane polarization disappears. The Young's modulus also shows an abrupt stiffness at the critical thickness. Based on the density functional theory calculations, we ascribe these behaviors to a structural phase transition from monoclinic to trigonal structure, which is further verified by transmission electron microscope technique. Taken together, these findings demonstrate the foundational importance of structural phase transition for enhancing the rich functionality and broad utility of vdW ferroelectrics.

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