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Source author record

Pei Zhao

Pei Zhao appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-halleess.ASSoundMachine Learningcond-mat.mtrl-scicond-mat.otherquant-ph

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Published work

11 published item(s)

preprint2023arXiv

Unconventional ferroelectricity in half-filling states of antiparallel stacking of twisted WSe2

Abstract: We report on emergence of an abnormal electronic polarization in twisted double bilayer WSe2 in antiparallel interface stacking geometry, where local centrosymmetry of atomic registries at the twist interface does not favor the spontaneous electronic polarizations as recently observed in the parallel interface stacking geometry. The unconventional ferroelectric behaviors probed by electronic transport measurement occur at half filling insulating states at 1.5 K and gradually disappear at about 40 K. Single band Hubbard model based on the triangular moiré lattice and the interlayer charge transfer controlled by insulating phase transition are proposed to interpret the formation of electronic polarization states near half filling in twisted WSe2 devices. Our work highlights the prominent role of many-body electronic interaction in fostering novel quantum states in moiré-structured systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

A Lite Microphone Array Beamforming Scheme with Maximum Signal-to-Noise Ratio Filter

Since space-domain information can be utilized, microphone array beamforming is often used to enhance the quality of the speech by suppressing directional disturbance. However, with the increasing number of microphone, the complexity would be increased. In this paper, a concise beamforming scheme using Maximum Signal-to-Noise Ratio (SNR) filter is proposed to reduce the beamforming complexity. The maximum SNR filter is implemented by using the estimated direction-of-arrival (DOA) of the speech source localization (SSL) and the solving method of independent vector analysis (IVA). Our experiments show that when compared with other widely-used algorithms, the proposed algorithm obtain higher gain of signal-to-interference and noise ratio (SINR).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Acoustic Echo Cancellation by Combining Adaptive Digital Filter and Recurrent Neural Network

Acoustic Echo Cancellation (AEC) plays a key role in voice interaction. Due to the explicit mathematical principle and intelligent nature to accommodate conditions, adaptive filters with different types of implementations are always used for AEC, giving considerable performance. However, there would be some kinds of residual echo in the results, including linear residue introduced by mismatching between estimation and the reality and non-linear residue mostly caused by non-linear components on the audio devices. The linear residue can be reduced with elaborate structure and methods, leaving the non-linear residue intractable for suppression. Though, some non-linear processing methods have already be raised, they are complicated and inefficient for suppression, and would bring damage to the speech audio. In this paper, a fusion scheme by combining adaptive filter and neural network is proposed for AEC. The echo could be reduced in a large scale by adaptive filtering, resulting in little residual echo. Though it is much smaller than speech audio, it could also be perceived by human ear and would make communication annoy. The neural network is elaborately designed and trained for suppressing such residual echo. Experiments compared with prevailing methods are conducted, validating the effectiveness and superiority of the proposed combination scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Competitive Wakeup Scheme for Distributed Devices

Wakeup is the primary function in voice interaction which is the mainstream scheme in man-machine interaction (HMI) applications for smart home. All devices will response if the same wake-up word is used for all devices. This will bring chaos and reduce user quality of experience (QoE). The only way to solve this problem is to make all the devices in the same wireless local area network (WLAN) competing to wake-up based on the same scoring rule. The one closest to the user would be selected for response. To this end, a competitive wakeup scheme is proposed in this paper with elaborately designed calibration method for receiving energy of microphones. Moreover, the user orientation is assisted to determine the optimal device. Experiments reveal the feasibility and validity of this scheme.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Voice Activity Detection Scheme by Combining DNN Model with GMM Model

Due to the superior modeling ability of deep neural network (DNN), it is widely used in voice activity detection (VAD). However, the performance may degrade if no sufficient data especially for practical data could be used for training, thus, leading to inferior ability of adaption to environment. Moreover, large model structure could not always be used in practical, especially for low cost devices where restricted hardware is used. This is on the contrary for Gaussian mixture model (GMM) where model parameters can be updated in real-time, but, with low modeling ability. In this paper, deeply integrated scheme combining these two models are proposed to improve adaptability and modeling ability. This is done by directly combining the results of models and feeding it back, together with the result of the DNN model, to update the GMM model. Besides, a control scheme is elaborately designed to detect the endpoints of speech. The superior performance by employing this scheme is validated through experiments in practical, which give an insight into the advantage of combining supervised learning and unsupervised learning.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spectrally pure states at telecommunications wavelengths from periodically poled $M$TiO$X$O$_4$ ($M$ = K, Rb, Cs; $X$ = P, As) crystals

Significant successes have recently been reported in the study of the generation of spectrally pure state in group-velocity-matched (GVM) nonlinear crystals. However, the GVM condition can only be realized in limited kinds of crystals and at limited wavelengths. Here, we investigate pure state generation in the isomorphs of PPKTP crystal: i.e., periodically poled RTP, KTA, RTA and CTA crystals. By numerical simulation, we find that these crystals from the KTP family can generate pure photons with high spectral purity (over 0.8), wide tunability (more than 400 nm), reasonable nonlinearity at a variety of wavelengths (from 1300 nm to 2100 nm). It is also discovered that the PPCTA crystal may achieve purity of 0.97 at 1506 nm. This study may provide more and better choices for quantum state engineering at telecom wavelengths.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated GNRFETs is conventional band-transport at room temperature, and inter-band tunneling at low temperature. The entire space of temperature, size, and geometry dependent transport properties and electrostatics of the GNRFETs are explained by a conventional thermionic emission and tunneling current model. Our combined experimental and modeling work proves that carefully fabricated narrow GNRs behave as conventional semiconductors, and remain potential candidates for electronic switching devices.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor

In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer. A large current peak occurs when the Dirac points are aligned at a particular drain-to- source bias VDS . Our model shows that the current of the SymFET is very weakly dependent on temperature. The resonant current peak is controlled by chemical doping and applied gate bias. The on/off ratio increases with graphene coherence length and doping. The symmetric resonant peak is a good candidate for high-speed analog applications, and can enable digital logic similar to the BiSFET. Our analytical model also offers the benefit of permitting simple analysis of features such as the full-width-at-half-maximum (FWHM) of the resonant peak and higher order harmonics of the nonlinear current. The SymFET takes advantage of the perfect symmetry of the bandstructure of 2D graphene, a feature that is not present in conventional semiconductors.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior

We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the 2D crystal material. The FETs show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the layered 2D crystal flexibility make WS2 attractive for future electronic and optical devices.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of Metal-Graphene Contact on the Operation and Scalability of Graphene Field-Effect-Transistors

We explore the effects of metal contacts on the operation and scalability of 2D Graphene Field-Effect-Transistors (GFETs) using detailed numerical device simulations based on the non-equilibrium Green's function formalism self-consistently solved with the Poisson equation at the ballistic limit. Our treatment of metal-graphene (M-G) contacts captures: (1) the doping effect due to the shift of the Fermi level in graphene contacts, (2) the density-of-states (DOS) broadening effect inside graphene contacts due to Metal-Induced-States (MIS). Our results confirm the asymmetric transfer characteristics in GFETs due to the doping effect by metal contacts. Furthermore, at higher M-G coupling strengths the contact DOS broadening effect increases the on-current, while the impact on the minimum current (Imin) in the off-state depends on the source to drain bias voltage and the work-function difference between graphene and the contact metal. Interestingly, with scaling of the channel length, the MIS inside the channel has a weak influence on Imin even at large M-G coupling strengths, while direct source-to-drain (S -> D) tunneling has a stronger influence. Therefore, channel length scalability of GFETs with sufficient gate control will be mainly limited by direct S -> D tunneling, and not by the MIS.

0 citations0 reviewsNo code linkedOpen access