Researcher profile

Pavlo Zolotavin

Pavlo Zolotavin contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2016arXiv

Current noise enhancement: channel mixing and possible nonequilibrium phonon backaction in atomic-scale Au junctions

We report measurements of the bias dependence of the Fano factor in ensembles of atomic-scale Au junctions at 77 K. Previous measurements of shot noise at room temperature and low biases have found good agreement of the Fano factor with the expectations of the Landauer- Büttiker formalism, while enhanced Fano factors have been observed at biases of hundreds of mV [R. Chen et al., Sci. Rep. 4, 4221 (2014)]. We find even stronger enhancement of shot noise at 77 K with an "excess" Fano factor up to ten times the low bias value. We discuss the observed ensemble Fano factor bias dependence in terms of candidate models. The results are most consistent with either a bias-dependent channel mixing picture or a model incorporating noise enhancement due to current-driven, nonequilibrium phonon populations, though a complete theoretical treatment of the latter in the ensemble average limit is needed.

preprint2016arXiv

Interplay of bias-driven charging and the vibrational Stark effect in molecular junctions

We observe large, reversible, bias driven changes in the vibrational energies of PCBM, based on simultaneous transport and surface-enhanced Raman spectroscopy (SERS) measurements on PCBM-gold junctions. A combination of linear and quadratic shifts in vibrational energies with voltage is analyzed and compared with similar measurements involving C60-gold junctions. A theoretical model based on density functional theory (DFT) calculations suggests that both a vibrational Stark effect and bias-induced charging of the junction contribute to the shifts in vibrational energies. In the PCBM case, a linear vibrational Stark effect is observed due to the permanent electric dipole moment of PCBM. The vibrational Stark shifts shown here for PCBM junctions are comparable to or larger than the charging effects that dominate in C60 junctions.

preprint2016arXiv

Plasmon-assisted photoresponse in Ge-coated bowtie nanojunctions

We demonstrate plasmon-enhanced photoconduction in Au bowtie nanojunctions containing nanogaps overlaid with an amorphous Ge film. The role of plasmons in the production of nanogap photocurrent is verified by studying the unusual polarization dependence of the photoresponse. With increasing Ge thickness, the nanogap polarization of the photoresponse rotates 90 degrees, indicating a change in the dominant relevant plasmon mode, from the resonant transverse plasmon at low thicknesses to the nonresonant "lightning rod" mode at higher thicknesses. To understand the plasmon response in the presence of the Ge overlayer and whether the Ge degrades the Au plasmonic properties, we investigate the photothermal response (from the temperature-dependent Au resistivity) in no-gap nanowire structures, as a function of Ge film thickness and nanowire geometry. The film thickness and geometry dependence are modeled using a cross-sectional, finite element simulation. The no-gap structures and the modeling confirm that the striking change in nanogap polarization response results from redshifting of the resonant transverse mode, rather than degradation in the Au/Ge properties. We note remaining challenges in determining the precise mechanism of photocurrent production in the nanogap structures.