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Patrick Odenthal

Patrick Odenthal contributes to research discovery and scholarly infrastructure.

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cond-mat.mes-hall

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preprint2015arXiv

Exchange-driven spin relaxation in ferromagnet/oxide/semiconductor heterostructures

We investigate electron spin relaxation in GaAs in the proximity of a Fe/MgO layer using spin-resolved optical pump-probe spectroscopy, revealing a strong dependence of the spin relaxation time on the strength of an exchange-driven hyperfine field. The temperature dependence of this effect reveals a strong correlation with carrier freeze out, implying that at low temperatures the free carrier spin lifetime is dominated by inhomogeneity in the local hyperfine field due to carrier localization. This result resolves a long-standing and contentious question of the origin of the spin relaxation in GaAs at low temperature when a magnetic field is present. Further, this improved fundamental understanding paves the way for future experiments exploring the time-dependent exchange interaction at the ferromagnet/semiconductor interface and its impact on spin dissipation and transport in the regime of dynamically-driven spin pumping.

preprint2014arXiv

Direct comparison of graphene devices before and after transfer to different substrates

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO2/Si wafers, the mobility generally is comparable and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g. SrTiO3 or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO2/Si substrates for patterning, but also provides a convenient way to study the effects of various substrates on graphene electronic properties.