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Jing Shi

Jing Shi appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-halleess.ASSoundcond-mat.str-elComputation and LanguageArtificial IntelligenceComputer Visioncond-mat.supr-conInformation RetrievalMachine Learningnlin.CGphysics.acc-phphysics.soc-ph

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Published work

47 published item(s)

preprint2022arXiv

Discretization and Re-synthesis: an alternative method to solve the Cocktail Party Problem

Deep learning based models have significantly improved the performance of speech separation with input mixtures like the cocktail party. Prominent methods (e.g., frequency-domain and time-domain speech separation) usually build regression models to predict the ground-truth speech from the mixture, using the masking-based design and the signal-level loss criterion (e.g., MSE or SI-SNR). This study demonstrates, for the first time, that the synthesis-based approach can also perform well on this problem, with great flexibility and strong potential. Specifically, we propose a novel speech separation/enhancement model based on the recognition of discrete symbols, and convert the paradigm of the speech separation/enhancement related tasks from regression to classification. By utilizing the synthesis model with the input of discrete symbols, after the prediction of discrete symbol sequence, each target speech could be re-synthesized. Evaluation results based on the WSJ0-2mix and VCTK-noisy corpora in various settings show that our proposed method can steadily synthesize the separated speech with high speech quality and without any interference, which is difficult to avoid in regression-based methods. In addition, with negligible loss of listening quality, the speaker conversion of enhanced/separated speech could be easily realized through our method.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Role of Magnon-Magnon Scattering in Magnon Polaron Spin Seebeck Effect

The spin Seebeck effect (SSE) signal of magnon polarons in bulk-Y3Fe5O12 (YIG)/Pt heterostructures is found to drastically change as a function of temperature. It appears as a dip in the total SSE signal at low temperatures, but as the temperature increases, the dip gradually decreases before turning to a peak. We attribute the observed dip-to-peak transition to the rapid rise of the four-magnon scattering rate. Our analysis provides important insights into the microscopic origin of the hybridized excitations and the overall temperature dependence of the SSE anomalies.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Training Noisy Single-Channel Speech Separation With Noisy Oracle Sources: A Large Gap and A Small Step

As the performance of single-channel speech separation systems has improved, there has been a desire to move to more challenging conditions than the clean, near-field speech that initial systems were developed on. When training deep learning separation models, a need for ground truth leads to training on synthetic mixtures. As such, training in noisy conditions requires either using noise synthetically added to clean speech, preventing the use of in-domain data for a noisy-condition task, or training using mixtures of noisy speech, requiring the network to additionally separate the noise. We demonstrate the relative inseparability of noise and that this noisy speech paradigm leads to significant degradation of system performance. We also propose an SI-SDR-inspired training objective that tries to exploit the inseparability of noise to implicitly partition the signal and discount noise separation errors, enabling the training of better separation systems with noisy oracle sources.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Wide Field Imaging of van der Waals Ferromagnet Fe3GeTe2 by Spin Defects in Hexagonal Boron Nitride

Emergent color centers with accessible spins hosted by van der Waals materials have attracted substantial interest in recent years due to their significant potential for implementing transformative quantum sensing technologies. Hexagonal boron nitride (hBN) is naturally relevant in this context due to its remarkable ease of integration into devices consisting of low-dimensional materials. Taking advantage of boron vacancy spin defects in hBN, we report nanoscale quantum imaging of low-dimensional ferromagnetism sustained in Fe3GeTe2/hBN van der Waals heterostructures. Exploiting spin relaxometry methods, we have further observed spatially varying magnetic fluctuations in the exfoliated Fe3GeTe2 flake, whose magnitude reaches a peak value around the Curie temperature. Our results demonstrate the capability of spin defects in hBN of investigating local magnetic properties of layered materials in an accessible and precise way, which can be extended readily to a broad range of miniaturized van der Waals heterostructure systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Current-induced CrI3 surface spin-flop transition probed by proximity magnetoresistance in Pt

By exploiting proximity coupling, we probe the spin state of the surface layers of CrI3, a van der Waals magnetic semiconductor, by measuring the induced magnetoresistance (MR) of Pt in Pt/CrI3 nano-devices. We fabricate the devices with clean and stable interfaces by placing freshly exfoliated CrI3 flake atop pre-patterned thin Pt strip and encapsulating the Pt/CrI3 heterostructure with hexagonal boron nitride (hBN) in a protected environment. In devices consisting of a wide range of CrI3 thicknesses (30 to 150 nm), we observe that an abrupt upward jump in Pt MR emerge at a 2 T magnetic field applied perpendicularly to the layers when the current density exceeds 2.5x10^10 A/m2, followed by a gradual decrease over a range of 5 T. These distinct MR features suggest a spin-flop transition which reveals strong antiferromagnetic interlayer coupling in the surface layers of CrI3. We study the current dependence by holding the Pt/CrI3 sample at approximately the same temperature to exclude the joule heating effect, and find that the MR jump increases with the current density, indicating a spin current origin. This spin current effect provides a new route to control spin configurations in insulating antiferromagnets, which is potentially useful for spintronic applications.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Neural Speaker Diarization with Speaker-Wise Chain Rule

Speaker diarization is an essential step for processing multi-speaker audio. Although an end-to-end neural diarization (EEND) method achieved state-of-the-art performance, it is limited to a fixed number of speakers. In this paper, we solve this fixed number of speaker issue by a novel speaker-wise conditional inference method based on the probabilistic chain rule. In the proposed method, each speaker's speech activity is regarded as a single random variable, and is estimated sequentially conditioned on previously estimated other speakers' speech activities. Similar to other sequence-to-sequence models, the proposed method produces a variable number of speakers with a stop sequence condition. We evaluated the proposed method on multi-speaker audio recordings of a variable number of speakers. Experimental results show that the proposed method can correctly produce diarization results with a variable number of speakers and outperforms the state-of-the-art end-to-end speaker diarization methods in terms of diarization error rate.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Sequence to Multi-Sequence Learning via Conditional Chain Mapping for Mixture Signals

Neural sequence-to-sequence models are well established for applications which can be cast as mapping a single input sequence into a single output sequence. In this work, we focus on one-to-many sequence transduction problems, such as extracting multiple sequential sources from a mixture sequence. We extend the standard sequence-to-sequence model to a conditional multi-sequence model, which explicitly models the relevance between multiple output sequences with the probabilistic chain rule. Based on this extension, our model can conditionally infer output sequences one-by-one by making use of both input and previously-estimated contextual output sequences. This model additionally has a simple and efficient stop criterion for the end of the transduction, making it able to infer the variable number of output sequences. We take speech data as a primary test field to evaluate our methods since the observed speech data is often composed of multiple sources due to the nature of the superposition principle of sound waves. Experiments on several different tasks including speech separation and multi-speaker speech recognition show that our conditional multi-sequence models lead to consistent improvements over the conventional non-conditional models.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Speaker-Conditional Chain Model for Speech Separation and Extraction

Speech separation has been extensively explored to tackle the cocktail party problem. However, these studies are still far from having enough generalization capabilities for real scenarios. In this work, we raise a common strategy named Speaker-Conditional Chain Model to process complex speech recordings. In the proposed method, our model first infers the identities of variable numbers of speakers from the observation based on a sequence-to-sequence model. Then, it takes the information from the inferred speakers as conditions to extract their speech sources. With the predicted speaker information from whole observation, our model is helpful to solve the problem of conventional speech separation and speaker extraction for multi-round long recordings. The experiments from standard fully-overlapped speech separation benchmarks show comparable results with prior studies, while our proposed model gets better adaptability for multi-round long recordings.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Spin Seebeck Effect near the Antiferromagnetic Spin-Flop Transition

We develop a low-temperature, long-wavelength theory for the interfacial spin Seebeck effect (SSE) in easy-axis antiferromagnets. The field-induced spin-flop (SF) transition of Néel order is associated with a qualitative change in SSE behavior: Below SF, there are two spin carriers with opposite magnetic moments, with the carriers polarized along the field forming a majority magnon band. Above SF, the low-energy, ferromagnetic-like mode has magnetic moment opposite the field. This results in a sign change of the SSE across SF, which agrees with recent measurements on Cr$_2$O$_3$/Pt and Cr$_2$O$_3$/Ta devices [Li $\textit{et al.,}$ $\textit{Nature}$ $\textbf{578,}$ 70 (2020)]. In our theory, SSE is due to a Néel spin current below SF and a magnetic spin current above SF. Using the ratio of the associated Néel to magnetic spin-mixing conductances as a single constant fitting parameter, we reproduce the field dependence of the experimental data and partially the temperature dependence of the relative SSE jump across SF.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Unveiling valley lifetimes of free charge carriers in monolayer WSe$_2$

We report on nanosecond long, gate-dependent valley lifetimes of free charge carriers in monolayer WSe$_2$, unambiguously identified by the combination of time-resolved Kerr rotation and electrical transport measurements. While the valley polarization increases when tuning the Fermi level into the conduction or valence band, there is a strong decrease of the respective valley lifetime consistent with both electron-phonon and spin-orbit scattering. The longest lifetimes are seen for spin-polarized bound excitons in the band gap region. We explain our findings via two distinct, Fermi level-dependent scattering channels of optically excited, valley polarized bright trions either via dark or bound states. By electrostatic gating we demonstrate that the transition metal dichalcogenide WSe$_2$ can be tuned to be either an ideal host for long-lived localized spin states or allow for nanosecond valley lifetimes of free charge carriers (> 10 ns).

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Valley lifetimes of conduction band electrons in monolayer WSe$_2$

One of the main tasks in the investigation of 2-dimensional transition metal dichalcogenides is the determination of valley lifetimes. In this work, we combine time-resolved Kerr rotation with electrical transport measurements to explore the gate-dependent valley lifetimes of free conduction band electrons of monolayer WSe$_2$. When tuning the Fermi energy into the conduction band we observe a strong decrease of the respective valley lifetimes which is consistent with both spin-orbit and electron-phonon scattering. We explain the formation of a valley polarization by the scattering of optically excited valley polarized bright trions into dark states by intervalley scattering. Furthermore, we show that the conventional time-resolved Kerr rotation measurement scheme has to be modified to account for photo-induced gate screening effects. Disregarding this adaptation can lead to erroneous conclusions drawn from gate-dependent optical measurements and can completely mask the true gate-dependent valley dynamics.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Fe$_{5-x}$Ge$_2$Te$_2$ -- A new exfoliable itinerant ferromagnet with high Curie temperature and large perpendicular magnetic anisotropy

Layered van der Waals (vdW) crystals with intrinsic magnetic properties such as high Curie temperature (TC) and large perpendicular magnetic anisotropy (PMA) are key to the development and application of spintronic devices. The ferromagnetic vdW metal Fe3-xGeTe2 (FGT) has gained prominence recently due to its high TC (220 K) and strong PMA. Here, we introduce a new metallic vdW ferromagnets, Fe5-xGe2Te2 or FG2T, which was successfully synthesized and fully characterized. FG2T is a metal that orders ferromagnetically with a very sharp transition at 250 K (bulk and single crystal thin flakes) and shows large PMA, as found by both experimental and computational studies. This work enables novel heterostructure devices with near room temperature capabilities by using FG2T as spin injector.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

An integrated approach to doped thin films with strain tunable magnetic anisotropy: Powder synthesis, target preparation and pulsed laser deposition of Bi:YIG

We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced anisotropy. In addition, the perpendicular anisotropy is tunable by decreasing the film thickness and overwhelms the shape anisotropy at a critical thickness of 3.5 nm.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Anomalous Hall hysteresis in Tm3Fe5O12/Pt with strain-induced perpendicular magnetic anisotropy

We demonstrate robust interface strain-induced perpendicular magnetic anisotropy in atomically flat ferrimagnetic insulator Tm3Fe5O12 films grown with pulsed laser deposition on substituted-Gd3Ga5O12 substrate which maximizes the tensile strain at the interface. In bilayers consisting of Pt and TIG, we observe large squared Hall hysteresis loops over a wide range of thicknesses of Pt at room temperature. When a thin Cu layer is inserted between Pt and TIG, the Hall hysteresis magnitude decays but stays finite as the thickness of Cu increases up to 5 nm. However, if the Cu layer is placed atop Pt instead, the Hall hysteresis magnitude is consistently larger than when the Cu layer with the same thickness is inserted in between for all Cu thicknesses. These results suggest that both the proximity-induced ferromagnetism and spin current contribute to the anomalous Hall effect.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film

Exchange bias is one of the most extensively studied phenomena in magnetism, since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupled to an antiferromagnet (AFM) and the control of the exchange bias is therefore very important for technological applications, such as magnetic random access memory and giant magnetoresistance sensors. In this letter, we report the crystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3 films. By epitaxially growing twined (10-10) oriented Cr2O3 thin films, of which the c axis and spins of the Cr atoms lie in the film plane, we demonstrate that the exchange bias between Cr2O3 and an adjacent permalloy layer is tuned to in-plane from out-of-plane that has been observed in (0001) oriented Cr2O3 films. This is owing to the collinear exchange coupling between the spins of the Cr atoms and the adjacent FM layer. Such a highly anisotropic exchange bias phenomenon is not possible in polycrystalline films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Enhanced spin Seebeck effect signal due to spin-momentum locked topological surface states

Spin-momentum locking in protected surface states enables efficient electrical detection of magnon decay at a magnetic-insulator/topological-insulator heterojunction. Here we demonstrate this property using the spin Seebeck effect, i.e. measuring the transverse thermoelectric response to a temperature gradient across a thin film of yttrium iron garnet, an insulating ferrimagnet, and forming a heterojunction with (BixSb1-x)2Te3, a topological insulator. The non-equilibrium magnon population established at the interface can decay in part by interactions of magnons with electrons near the Fermi energy of the topological insulator. When this decay channel is made active by tuning (BixSb1-x)2Te3 to a bulk insulator, a large electromotive force emerges in the direction perpendicular to the in-plane magnetization of yttrium iron garnet. The enhanced, tunable spin Seebeck effect which occurs when the Fermi level lies in the bulk gap offers unique advantages over the usual spin Seebeck effect in metals and therefore opens up exciting possibilities in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Experimental Investigation of Temperature-Dependent Gilbert Damping in Permalloy Thin Films

The Gilbert damping of ferromagnetic materials is arguably the most important but least understood phenomenological parameter that dictates real-time magnetization dynamics. Understanding the physical origin of the Gilbert damping is highly relevant to developing future fast switching spintronics devices such as magnetic sensors and magnetic random access memory. Here, we report an experimental study of temperature-dependent Gilbert damping in permalloy (Py) thin films of varying thicknesses by ferromagnetic resonance. From the thickness dependence, two independent contributions to the Gilbert damping are identified, namely bulk damping and surface damping. Of particular interest, bulk damping decreases monotonically as the temperature decreases, while surface damping shows an enhancement peak at the temperature of ~50 K. These results provide an important insight to the physical origin of the Gilbert damping in ultrathin magnetic films.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Hierarchical Memory Networks for Answer Selection on Unknown Words

Recently, end-to-end memory networks have shown promising results on Question Answering task, which encode the past facts into an explicit memory and perform reasoning ability by making multiple computational steps on the memory. However, memory networks conduct the reasoning on sentence-level memory to output coarse semantic vectors and do not further take any attention mechanism to focus on words, which may lead to the model lose some detail information, especially when the answers are rare or unknown words. In this paper, we propose a novel Hierarchical Memory Networks, dubbed HMN. First, we encode the past facts into sentence-level memory and word-level memory respectively. Then, (k)-max pooling is exploited following reasoning module on the sentence-level memory to sample the (k) most relevant sentences to a question and feed these sentences into attention mechanism on the word-level memory to focus the words in the selected sentences. Finally, the prediction is jointly learned over the outputs of the sentence-level reasoning module and the word-level attention mechanism. The experimental results demonstrate that our approach successfully conducts answer selection on unknown words and achieves a better performance than memory networks.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, has attracted a great deal of interest recently owing to its potential for integration with Dirac materials to realize the quantum anomalous Hall effect (QAHE) and to develop novel spintronics devices. Here, we study the uniaxial magnetic anisotropy energy of single-crystalline CGT and determine that the magnetic easy axis is directed along the c-axis in its ferromagnetic phase. In addition, CGT is an insulator below the Curie temperature. These properties make CGT a potentially promising candidate substrate for integration with topological insulators for the realization of the high-temperature QAHE.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Observation of magnon-mediated current drag in Pt/yttrium iron garnet/Pt(Ta) trilayers

Pure spin current, a flow of spin angular momentum without flow of any companying net charge, is generated in two common ways. One makes use of the spin Hall effect in normal metals (NM) with strong spin-orbit coupling, such as Pt or Ta. The other utilizes the collective motion of magnetic moments or spin waves with the quasi-particle excitations called magnons. A popular material for the latter is yttrium iron garnet, a magnetic insulator (MI). Here we demonstrate in NM/MI/NM trilayers that these two types of spin currents are interconvertible across the interfaces, predicated as the magnon-mediated current drag phenomenon. The transmitted signal scales linearly with the driving current without a threshold and follows the power-law with n ranging from 1.5 to 2.5. Our results indicate that the NM/MI/NM trilayer structure can serve as a scalable pure spin current valve device which is an essential ingredient in spintronics.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Platinum/Yttrium Iron Garnet Inverted Structures for Spin Current Transport

30-80 nm thick yttrium iron garnet (YIG) films are grown by pulsed laser deposition on a 5 nm thick sputtered Pt atop gadolinium gallium garnet substrate (GGG) (110). Upon post-growth rapid thermal annealing, single crystal YIG(110) emerges as if it were epitaxially grown on GGG(110) despite the presence of the intermediate Pt film. The YIG surface shows atomic steps with the root-mean-square roughness of 0.12 nm on flat terraces. Both Pt/YIG and GGG/Pt interfaces are atomically sharp. The resulting YIG(110) films show clear in-plane uniaxial magnetic anisotropy with a well-defined easy axis along <001> and a peak-to-peak ferromagnetic resonance linewidth of 7.5 Oe at 9.32 GHz, similar to YIG epitaxilly grown on GGG. Both spin Hall magnetoresistance and longitudinal spin Seebeck effects in the inverted bilayers indicate excellent Pt/YIG interface quality.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Spin Injection and Inverse Edelstein Effect in the Surface States of Topological Kondo Insulator SmB6

There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TI), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin-momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin-momentum locking property of surface states of SmB6.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS$_2$

We demonstrate clear weak anti-localization (WAL) effect arising from induced Rashba spin-orbit coupling (SOC) in WS$_2$-covered single-layer and bilayer graphene devices. Contrary to the uncovered region of a shared single-layer graphene flake, WAL in WS$_2$-covered graphene occurs over a wide range of carrier densities on both electron and hole sides. At high carrier densities, we estimate the Rashba SOC relaxation rate to be $\sim 0.2 \rm{ps}^{-1}$ and show that it can be tuned by transverse electric fields. In addition to the Rashba SOC, we also predict the existence of a `valley-Zeeman' SOC from first-principles calculations. The interplay between these two SOC's can open a non-topological but interesting gap in graphene; in particular, zigzag boundaries host four sub-gap edge states protected by time-reversal and crystalline symmetries. The graphene/WS$_2$ system provides a possible platform for these novel edge states.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Epitaxial growth and properties of La0.7Sr0.3MnO3 thin films with micrometer wide atomic terraces

La0.7Sr0.3MnO3 (LSMO) films with extraordinarily wide atomic terraces are epitaxially grown on SrTiO3 (100) substrates by pulsed laser deposition. Atomic force microscopy measurements on the LSMO films show that the atomic step is ~ 4 Å and the atomic terrace width is more than 2 micrometers. For a 20 monolayers (MLs) LSMO film, the magnetization is determined to be 255 +- 15 emu/cm3 at room temperature, corresponding to 1.70 + - 0.11 Bohr magneton per Mn atom. As the thickness of LSMO increases from 8 MLs to 20 MLs, the critical thickness for the temperature dependent insulator-to-metal behavior transition is shown to be 9 MLs. Furthermore, post-annealing in oxygen environment improves the electron transport and magnetic properties of the LSMO films.

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preprint2015arXiv

Experimental Demonstration of XOR Operation in Graphene Magnetologic Gates at Room Temperature

We report the experimental demonstration of a magnetologic gate built on graphene at room temperature. This magnetologic gate consists of three ferromagnetic electrodes contacting a single layer graphene spin channel and relies on spin injection and spin transport in the graphene. We utilize electrical bias tuning of spin injection to balance the inputs and achieve "exclusive or" (XOR) logic operation. Furthermore, simulation of the device performance shows that substantial improvement towards spintronic applications can be achieved by optimizing device parameters such as device dimensions. This advance holds promise as a basic building block for spin-based information processing.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Independent tuning of electronic properties and induced ferromagnetism in topological insulators with heterostructure approach

The quantum anomalous Hall effect (QAHE) has been recently demonstrated in Cr- and V-doped three-dimensional topological insulators (TIs) at temperatures below 100 mK. In those materials, the spins of unfilled d-electrons in the transition metal dopants are exchange coupled to develop a long-range ferromagnetic order, which is essential for realizing QAHE. However, the addition of random dopants does not only introduce excess charge carriers that require readjusting the Bi/Sb ratio, but also unavoidably introduces paramagnetic spins that can adversely affect the chiral edge transport in QAHE. In this work, we show a heterostructure approach to independently tune the electronic and magnetic properties of the topological surface states in (BixSb1-x)2Te3 without resorting to random doping of transition metal elements. In heterostructures consisting of a thin (BixSb1-x)2Te3 TI film and yttrium iron garnet (YIG), a high Curie temperature (~ 550 K) magnetic insulator, we find that the TI surface in contact with YIG becomes ferromagnetic via proximity coupling which is revealed by the anomalous Hall effect (AHE). The Curie temperature of the magnetized TI surface ranges from 20 to 150 K but is uncorrelated with the Bi fraction x in (BixSb1-x)2Te3. In contrast, as x is varied, the AHE resistivity scales with the longitudinal resistivity. In this approach, we decouple the electronic properties from the induced ferromagnetism in TI. The independent optimization provides a pathway for realizing QAHE at higher temperatures, which is important for novel spintronic device applications.

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preprint2015arXiv

Multiferroicity and Magnetoelectric Coupling in TbMnO3 Thin Films

In this work, we report the growth and functional characterizations of multiferroic TbMnO3 thin films grown on Nb-doped SrTiO3 (001) substrates using pulsed laser deposition. By performing detailed magnetic and ferroelectric properties measurements, we demonstrate that the multiferroicity of spin origin known in the bulk crystals can be successfully transferred to TbMnO3 thin films. Meanwhile, anomalous magnetic transition and unusual magnetoelectric coupling related to Tb moments are observed, suggesting a modified magnetic configuration of Tb in the films as compared to the bulk counterpart. In addition, it is found that the magnetoelectric coupling enabled by Tb moments can even be seen far above the Tb spin ordering temperature, which provides a larger temperature range for the magnetoelectric control involving Tb moments.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Direct comparison of graphene devices before and after transfer to different substrates

The entire graphene field-effect-transistor (FET) devices first fabricated on SiO2/Si are peeled from the surface and placed on a different wafer. Both longitudinal and transverse resistivity measurements of the devices before and after the transfer are measured to calculate the mobility for a direct comparison. After transferred to different SiO2/Si wafers, the mobility generally is comparable and the defect density does not show any significant increase, which indicates the degradation due to the transfer process itself is minimal. The same method can be applied to transfer graphene devices to any arbitrary substrates (e.g. SrTiO3 or STO). The transfer method developed here not only eliminates the need to locate single-layer graphene on non-SiO2/Si substrates for patterning, but also provides a convenient way to study the effects of various substrates on graphene electronic properties.

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preprint2014arXiv

Ferroelectric-like SrTiO3 surface dipoles probed by graphene

The electrical transport properties of graphene are greatly influenced by its environment. Owing to its high dielectric constant, strontium titanate (STO) is expected to suppress the long-range charged impurity scattering and consequently to enhance the mobility. However, the absence of such enhancement has caused some controversies regarding the scattering mechanism. In graphene devices transferred from SiO2 to STO using a newly developed technique, we observe a moderate mobility enhancement near the Dirac point, which is the point of charge neutrality achieved by adjusting the Fermi level. While bulk STO is not known as a ferroelectric material, its surface was previously reported to exhibit an outward displacement of oxygen atoms and ferroelectric-like dipole moment. When placed on STO, graphene shows strong and asymmetric hysteresis in resistivity, which is consistent with the dipole picture associated with the oxygen displacement. The hysteretic response of the surface dipole moment diminishes the polarizability, therefore weakens the ability of STO to screen the Coulomb potential of the impurities.

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preprint2014arXiv

Heat-driven spin transport in a ferromagnetic metal

As a non-magnetic heavy metal is attached to a ferromagnet, a vertically flowing heat-driven spin current is converted to a transverse electric voltage, which is known as the longitudinal spin Seebeck effect (SSE). If the ferromagnet is a metal, this voltage is also accompanied by voltages from two other sources, i.e. the anomalous Nernst effect in both the ferromagnet and the proximity-induced ferromagnetic boundary layer. By properly identifying and carefully separating those different effects, we find that in this pure spin current circuit the additional spin current drawn by the heavy metal generates another significant voltage by the ferromagnetic metal itself which should be present in all relevant experiments.

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preprint2014arXiv

Proximity-induced ferromagnetism in graphene revealed by anomalous Hall effect

We demonstrate the anomalous Hall effect (AHE) in single-layer graphene exchange-coupled to an atomically flat yttrium iron garnet (YIG) ferromagnetic thin film. The anomalous Hall conductance has magnitude of ~0.09(2e2/h) at low temperatures and is measurable up to ~ 300 K. Our observations indicate not only proximity-induced ferromagnetism in graphene/YIG with large exchange interaction, but also enhanced spin-orbit coupling which is believed to be inherently weak in ideal graphene. The proximity-induced ferromagnetic order in graphene can lead to novel transport phenomena such as the quantized AHE which are potentially useful for spintronics.

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preprint2014arXiv

Studies of LL-type 500MHz 5-cell superconducting cavity at SINAP

A low loss (LL) type 500 MHz 5-cell superconducting niobium prototype cavity with large beam aperture has been developed successfully including the optimization, the deep drawing and electron beam welding, the surface treatment and the vertical testing. The performance of the fundamental mode was optimized and the higher order modes were damped by adopting an enlarged beam pipe for propagation. Surface preparation or treatment including mechanical polishing, buffered chemical polishing and high pressure rinsing with ultra-pure water and so on was carried out carefully to promise a perfect inner surface condition. The vertical testing results show that the accelerating voltage higher than 7.5 MV was obtained while the quality factor was better than 1E9 at 4.2 K. No obvious multipacting or field emission was found during the test. However, a quench happened while increasing the field a little higher than 7.5 MV that at present limited the cavity performance.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

77Se NMR Investigation of Fe-doped Bi2Se3

Bismuth selenide is both a thermoelectric material and topological insulator. Defects and dopants create conduction in thermoelectric applications. However, such defects may degrade the performance as a topological insulator (TI). Magnetic impurities such as iron open a band gap at the Dirac point on the surface. Since magnetically-doped TIs are important in technological applications, a good understanding of their properties is needed. In this article, 77Se nuclear magnetic resonance (NMR) spectroscopy has been used to investigate Fe-doped Bi2Se3. Spin-lattice relaxation measurements indicate that the Fe dopants provide a spin diffusion relaxation mechanism at low temperatures for the 77Se. Above 320 K, the predominant 77Se relaxation mechanism resulting from interaction with the conduction carriers is thermally induced with an activation energy of 21.5 kJ/mol (5.1 kcal/mol, 222 meV) and likely arises from inter-band excitations. Magic-angle spinning produces negligible narrowing of the 77Se resonance at 7 T, suggesting a statistical distribution of material defects and is also consistent with a dipolar interaction with the neighboring quadrupolar nucleus.

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preprint2013arXiv

Induced magneto-transport properties at palladium/yttrium iron garnet interface

As a thin layer of palladium (Pd) is directly deposited on an yttrium iron garnet or YIG (Y3Fe5O12) magnetic insulator film, Pd develops both low- and high-field magneto-transport effects that are absent in standalone Pd or thick Pd on YIG. While the low-field magnetoresistance peak of Pd tracks the coercive field of the YIG film, the much larger high-field magnetoresistance and the Hall effect do not show any obvious relationship with the bulk YIG magnetization. The distinct high-field magneto-transport effects in Pd are shown to be caused by interfacial local moments in Pd.

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preprint2012arXiv

A Two-Dimensional CA Traffic Model with Dynamic Route Choices Between Residence and Workplace

The Biham, Middleton and Levine (BML) model is extended to describe dynamic route choices between the residence and workplace in cities. The traffic dynamic in the city with a single workplace is studied from the velocity diagram, arrival time probability distribution, destination arrival rate and convergence time. The city with double workplaces is also investigated to compared with a single workplace within the framework of four modes of urban growth. The transitional region is found in the velocity diagrams where the system undergoes a continuous transition from a moving phase to a completely jamming phase. We perform a finite-size scaling analysis of the critical density from a statistical point of view and the order parameter of this jamming transition is estimated. It is also found that statistical properties of urban traffic are greatly influenced by the urban area, workplace area and urban layout.

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preprint2012arXiv

Derivative relations between electrical and thermoelectric quantum transport coefficients in graphene

We find that the empirical relation between the longitudinal and Hall resistivities (i.e. Rxx and Rxy) and its counterpart between the Seebeck and Nernst coefficients (i.e. Sxx and Sxy), both originally discovered in two-dimensional electron gases, hold remarkably well for graphene in the quantum transport regime except near the Dirac point. The validity of the relations is cross-examined by independently varying the magnetic field and the carrier density in graphene. We demonstrate that the pre-factor, α_s, does not depend on carrier density in graphene. By tuning the carrier mobility therefore the degree of disorders, we find that the pre-factor stays unchanged. Near the Dirac point, different mechanisms at low densities such as carrier localization may be responsible for the breakdown of these relations.

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preprint2012arXiv

Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3

By eliminating normal fabrication processes, we preserve the bulk insulating state of calcium-doped Bi2Se3 single crystals in suspended nanodevices, as indicated by the activated temperature dependence of the resistivity at low temperatures. We perform low-energy electron beam irradiation (<16 keV) and electrostatic gating to control the carrier density and therefore the Fermi level position in the nanodevices. In slightly p-doped Bi2-xCaxSe3 devices, continuous tuning of the Fermi level from the bulk valence band to the band-gap reveals dramatic enhancement (> a factor of 10) in the field-effect mobility, which suggests suppressed backscattering expected for the Dirac fermion surface states in the gap of topological insulators.

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preprint2012arXiv

Spin Relaxation in Single Layer Graphene with Tunable Mobility

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.

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preprint2011arXiv

Direct Evidence for Edge-Contaminated Vortex Phase in a Nb Single Crystal using Neutron Diffraction

We report the first direct observation of a disordered vortex matter phase existing near the edge of a bulk type-II superconductor Nb using a novel position-sensitive neutron diffraction technique. This "edge-contaminated" vortex state was implicated in previous studies using transport techniques and was postulated to have played a significant role in the behavior of vortex dynamics in a wide range of type-II superconductors. It is found that upon thermal annealing, the vortex matter in the bulk undergoes re-ordering, suggesting that the edge-contaminated bulk vortex state is metastable. The edge vortex state remains disordered after repeated thermal annealing, indicating spatial coexistence of a vortex glass with a Bragg glass. This observation resolves many outstanding issues concerning the peak effect in type-II superconductors.

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preprint2011arXiv

Effect of charged impurities on graphene thermoelectric power near the Dirac point

In graphene devices with a varying degree of disorders as characterized by their carrier mobility and minimum conductivity, we have studied the thermoelectric power along with the electrical conductivity over a wide range of temperatures. We have found that the Mott relation fails in the vicinity of the Dirac point in high-mobility graphene. By properly taking account of the high temperature effects, we have obtained good agreement between the Boltzmann transport theory and our experimental data. In low-mobility graphene where the charged impurities induce relatively high residual carrier density, the Mott relation holds at all gate voltages.

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preprint2011arXiv

Reconfigurable nanoelectronics using graphene based spintronic logic gates

This paper presents a novel design concept for spintronic nanoelectronics that emphasizes a seamless integration of spin-based memory and logic circuits. The building blocks are magneto-logic gates based on a hybrid graphene/ferromagnet material system. We use network search engines as a technology demonstration vehicle and present a spin-based circuit design with smaller area, faster speed, and lower energy consumption than the state-of-the-art CMOS counterparts. This design can also be applied in applications such as data compression, coding and image recognition. In the proposed scheme, over 100 spin-based logic operations are carried out before any need for a spin-charge conversion. Consequently, supporting CMOS electronics requires little power consumption. The spintronic-CMOS integrated system can be implemented on a single 3-D chip. These nonvolatile logic circuits hold potential for a paradigm shift in computing applications.

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preprint2010arXiv

Optical characterization of Bi$_2$Se$_3$ in a magnetic field: infrared evidence for magnetoelectric coupling in a topological insulator material

We present an infrared magneto-optical study of the highly thermoelectric narrow-gap semiconductor Bi$_2$Se$_3$. Far-infrared and mid-infrared (IR) reflectance and transmission measurements have been performed in magnetic fields oriented both parallel and perpendicular to the trigonal $c$ axis of this layered material, and supplemented with UV-visible ellipsometry to obtain the optical conductivity $σ_1(ω)$. With lowering of temperature we observe narrowing of the Drude conductivity due to reduced quasiparticle scattering, as well as the increase in the absorption edge due to direct electronic transitions. Magnetic fields $H \parallel c$ dramatically renormalize and asymmetrically broaden the strongest far-IR optical phonon, indicating interaction of the phonon with the continuum free-carrier spectrum and significant magnetoelectric coupling. For the perpendicular field orientation, electronic absorption is enhanced, and the plasma edge is slightly shifted to higher energies. In both cases the direct transition energy is softened in magnetic field.

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preprint2010arXiv

Suspension and Measurement of Graphene and Bi2Se3 Atomic Membranes

Coupling high quality, suspended atomic membranes to specialized electrodes enables investigation of many novel phenomena, such as spin or Cooper pair transport in these two dimensional systems. However, many electrode materials are not stable in acids that are used to dissolve underlying substrates. Here we present a versatile and powerful multi-level lithographical technique to suspend atomic membranes, which can be applied to the vast majority of substrate, membrane and electrode materials. Using this technique, we fabricated suspended graphene devices with Al electrodes and mobility of 5500 cm^2/Vs. We also demonstrate, for the first time, fabrication and measurement of a free-standing thin Bi2Se3 membrane, which has low contact resistance to electrodes and a mobility of >~500 cm^2/Vs.

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preprint2010arXiv

Tuning carrier type and density in Bi2Se3 by Ca-doping

The carrier type and density in Bi2Se3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ~1x1017 cm-3 which corresponds to ~25 meV in the Fermi energy is obtained in both n- and p-type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.

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preprint2009arXiv

Anomalous thermoelectric transport of Dirac particles in graphene

We report a thermoelectric study of graphene in both zero and applied magnetic fields. As a direct consequence of the linear dispersion of massless particles, we find that the Seebeck coefficient Sxx diverges with 1 /, where n2D is the carrier density. We observe a very large Nernst signal Sxy (~ 50 uV/K at 8 T) at the Dirac point, and an oscillatory dependence of both Sxx and Sxy on n2D at low temperatures. Our results underscore the anomalous thermoelectric transport in graphene, which may be used as a highly sensitive probe for impurity bands near the Dirac point.

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preprint2009arXiv

Interface Ferromagnetism in (110)-Oriented La0.7Sr0.3MnO3/SrTiO3 Ultrathin Superlattices

We explore manganite interface magnetism in epitaxially grown La0.7Sr0.3MnO3(LSMO)/SrTiO3 ultrathin superlattices (SL) along (110) orientation. we show that robust ferromagnetism persists down to four monolayers LSMO(MLs) (~1.1 nm in thickness), of which 50% Mn is at the interface state. Above eight MLs, the magnetic moment is nearly saturated to the theoretical value of 3.7u_B, with an estimated interface moment of 3.2u_B. In comparison to (100)-oriented SLs which were previously shown to have a spin canted ground state, (110)-oriented SLs exhibit stronger low-dimensional ferromagnetism and better metallicity, suggesting a ferromagnetic interface spin state well suited for all-oxide spintronic devices. The underlining mechanism is qualitatively discussed.

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