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Patrick Harvey-Collard

Patrick Harvey-Collard appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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Published work

2 published item(s)

preprint2022arXiv

Coherent spin-spin coupling mediated by virtual microwave photons

We report the coherent coupling of two electron spins at a distance via virtual microwave photons. Each spin is trapped in a silicon double quantum dot at either end of a superconducting resonator, achieving spin-photon couplings up to around $g_s/2π= 40 \ \text{MHz}$. As the two spins are brought into resonance with each other, but detuned from the photons, an avoided crossing larger than the spin linewidths is observed with an exchange splitting around $2J/2π= 20 \ \text{MHz}$. In addition, photon-number states are resolved from the shift $2χ_s/2π= -13 \ \text{MHz}$ that they induce on the spin frequency. These observations demonstrate that we reach the strong dispersive regime of circuit quantum electrodynamics with spins. Achieving spin-spin coupling without real photons is essential to long-range two-qubit gates between spin qubits and scalable networks of spin qubits on a chip.

preprint2014arXiv

A Silicon Nanocrystal Tunnel Field Effect Transistor

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxyde and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and in principle allows scaling down the atomic level. The demonstrated ncFET features a 10$^4$ on/off current ratio at room temperature, a low 30 pA/$μ$m leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.