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Researcher profile

Patrick E. Hopkins

Patrick E. Hopkins contributes to research discovery and scholarly infrastructure.

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cond-mat.mtrl-sciphysics.app-phcond-mat.mes-hallphysics.opticsphysics.plasm-ph

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Published work

10 published item(s)

preprint2026arXiv

Tailoring phonon-driven responses in α-MoO3 through isotopic enrichment

The implementation of polaritonic materials into nanoscale devices requires selective tuning of parameters to realize desired spectral or thermal responses. One robust material is α-MoO3, which as an orthorhombic crystal boasts three distinct phonon dispersions, providing three polaritonic dispersions of hyperbolic phonon polaritons (HPhPs) across the mid-infrared (MIR). Here, the tunability of both optical and thermal responses in isotopically enriched α-MoO3 (98MoO3, Mo18O3 and 98Mo18O3) are explored. A uniform ~5 % spectral redshift from 18O enrichment is observed in both Raman- and IR-active TO phonons. Both the in- and out-of-plane thermal conductivities for the isotopic variations are reported. Ab initio calculations both replicate experimental findings and analyze the select-mode three-phonon scattering contributions. The HPhPs from each isotopic variation are probed with s-SNOM and their Q- factors are reported. A Q-factor maxima increase of ~50 % along the [100] in the RB2 and ~100 % along the [001] in the RB3 are reported for HPhPs supported in 98Mo18O3. Observations in both real and Fourier space of higher-order HPhP modes propagating in single slabs of isotopically enriched α-MoO3 without the use of a subdiffractional surface scatterer are presented here. This work illustrates the tunability of α-MoO3 for thermal and nanophotonic applications.

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preprint2022arXiv

Direct Visualization of Localized Vibrations at Complex Grain Boundaries

Grain boundaries (GBs) are a prolific microstructural feature that dominates the functionality of a wide class of materials. The change in functionality at a GB is a direct result of unique local atomic arrangements, different from those in the grain, that have driven extensive experimental and theoretical studies correlating atomic-scale GB structures to macroscopic electronic, infrared-optical, and thermal properties. Here, we examine a SrTiO3 GB using atomic-resolution aberration-corrected scanning transmission electron microscopy (STEM) and ultra-high-energy-resolution monochromated electron energy-loss spectroscopy (EELS), in conjunction with density functional theory (DFT) calculations. This combination enables the direct correlation of the GB structure, composition, and chemical bonding with atomic vibrations within the GB dislocation-cores. We observe that nonstoichiometry and changes in coordination and bonding at the GB leads to a redistribution of vibrational states at the GB and its dislocation-cores relative to the bounding grains. The access to localized vibrations within GBs provided by ultrahigh spatial/spectral resolution EELS correlated with atomic coordination, bonding, and stoichiometry and validated by theory, provides a direct route to quantifying the impact of individual boundaries on macroscopic properties.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Nanoscale Phonon Spectroscopy Reveals Emergent Interface Vibrational Structure of Superlattices

As the length-scales of materials decrease, heterogeneities associated with interfaces approach the importance of the surrounding materials. Emergent electronic and magnetic interface properties in superlattices have been studied extensively by both experiments and theory. $^{1-6}$ However, the presence of interfacial vibrations that impact phonon-mediated responses, like thermal conductivity $^{7,8}$, has only been inferred in experiments indirectly. While it is accepted that intrinsic phonons change near boundaries $^{9,10}$, the physical mechanisms and length-scales through which interfacial effects influence materials remain unclear. Herein, we demonstrate the localized vibrational response associated with the interfaces in SrTiO$_3$-CaTiO$_3$ superlattices by combining advanced scanning transmission electron microscopy imaging and spectroscopy and density-functional-theory calculations. Symmetries atypical of either constituent material are observed within a few atomic planes near the interface. The local symmetries create local phonon modes that determine the global response of the superlattice once the spacing of the interfaces approaches the phonon spatial extent. The results provide direct visualization and quantification, illustrating the progression of the local symmetries and interface vibrations as they come to determine the vibrational response of an entire superlattice; stated differently, the progression from a material with interfaces, to a material dominated by interfaces, to a material of interfaces as the period decreases. Direct observation of such local atomic and vibrational phenomena demonstrates that their spatial extent needs to be quantified to understand macroscopic behavior. Tailoring interfaces, and knowing their local vibrational response, provides a means of pursuing designer solids having emergent infrared and thermal responses.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Plasma-induced surface cooling

Here we show that, despite a massive incident flux of energetic species, plasmas can induce transient cooling of a material surface. Using time-resolved optical thermometry in-situ with this plasma excitation, we reveal the novel underlying physics that drive this `plasma cooling' that is driven by the diverse chemical and energetic species that comprise this fourth state of matter. We show that the photons and massive particles in the plasma impart energy to different chemical species on a surface, leading to local and temporally changing temperatures that lead to both increases and decreases in temperature on the surface of the sample, even though energy is being imparted to the material. This balance comes from the interplay between chemical reactions, momentum transfer, and energy exchange which occur on different time scales over the course of picoseconds to milliseconds. Thus, we show that through energetically exciting a material with a plasma, we can induce cooling, which can lead to revolutionary advances in refrigeration and thermal mitigation with this new process that is not inhibited by the same limitations in the current state-of-the-art systems.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Dual-Phase High-Entropy Ultra-High Temperature Ceramics

A series of dual-phase high-entropy ultrahigh temperature ceramics (DPHE-UHTCs) are fabricated starting from N binary borides and (5-N) binary carbides powders. >~99% relative densities have been achieved with virtually no native oxides. These DPHE-UHTCs consist of a hexagonal high-entropy boride (HEB) phase and a cubic high-entropy carbide (HEC) phase. A thermodynamic relation that governs the compositions of the HEB and HEC phases in equilibrium is discovered and a thermodynamic model is proposed. These DPHE-UHTCs exhibit tunable grain size, Vickers microhardness, Young' and shear moduli, and thermal conductivity. The DPHE-UHTCs have higher hardness than the weighted linear average of the two single-phase HEB and HEC, which are already harder than the rule-of-mixture averages of individual binary borides and carbides. This study extends the state of the art by introducing dual-phase high-entropy ceramics (DPHECs), which provide a new platform to tailor various properties via changing the phase fraction and microstructure.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Interface controlled thermal properties of ultra-thin chalcogenide-based phase change memory devices

Phase change memory (PCM) is a rapidly growing technology that not only offers advancements in storage-class memories but also enables in-memory data storage and processing towards overcoming the von Neumann bottleneck. In PCMs, the primary mechanism for data storage is thermal excitation. However, there is a limited body of research regarding the thermal properties of PCMs at length scales close to the memory cell dimension and, thus, the impact of interfaces on PCM operation is unknown. Our work presents a new paradigm to manage thermal transport in memory cells by manipulating the interfacial thermal resistance between the phase change unit and the electrodes without incorporating additional insulating layers. Experimental measurements show a substantial change in thermal boundary resistance as GST transitions from one crystallographic structure (cubic) to another (hexagonal) and as the thickness of tungsten contacts is reduced from five to two nanometers. Simulations reveal that interfacial resistance between the phase change unit and its adjacent layer can reduce the reset current for 20 and 120 nm diameter devices by up to ~40% and ~50%, respectively. The resultant phase-dependent and geometric effects on thermal boundary resistance dictate that the effective thermal conductivity of the phase change unit can be reduced by a factor of four, presenting a new opportunity to reduce operating currents in PCMs.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Long-lived modulation of plasmonic absorption by ballistic thermal injection

Energy and charge transfer across metal-semiconductor interfaces are the fundamental driving forces for a broad range of applications, such as computing, energy harvesting, and photodetection. However, the exact roles and physical separation of these two phenomena remains unclear, particularly in plasmonically-excited systems or cases of strong nonequilibrium. We report on a series of ultrafast plasmonic measurements that provide a direct measure of electronic distributions, both spatially and temporally, following optical excitation of a metal-semiconductor heterostructure. For the first time, we explicitly show that in cases of strong non-equilibrium, a novel energy transduction mechanism arises at the metal/semiconductor interface. We find that hot electrons in the metal contact transfer their energy to pre-existing electrons in the semiconductor, without transfer of charge. These experimental results findings are well-supported by both rigorous multilayer optical modeling and first-principle, ab initio calculations.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor

Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long lifetimes. AlN, with its potentially high thermal conductivity, can play an important role serving as a dielectric layer, growth substrate, and heat spreader to improve device performance. However, the intrinsic high thermal conductivity of bulk AlN predicted by theoretical calculations has not been experimentally observed because of the difficulty in producing materials with low vacancy and impurity levels, and other associated defect complexes in AlN which can decrease the thermal conductivity. This work reports the growth of thick AlN layers by MOCVD with an air-pocketed AlN layer and the first experimental observation of intrinsic thermal conductivity from 130 K to 480 K that matches density-function-theory calculations for single crystal AlN, producing some of the highest values ever measured. Detailed material characterizations confirm the high quality of these AlN samples with one or two orders of magnitude lower impurity concentrations than seen in commercially available bulk AlN. Measurements of these commercially available bulk AlN substrates from 80 K to 480 K demonstrated a lower thermal conductivity, as expected. A theoretical thermal model is built to interpret the measured temperature dependent thermal conductivity. Our work demonstrates that it is possible to obtain theoretically high values of thermal conductivity in AlN and such films may impact the thermal management and reliability of future electronic and optoelectronics devices.

0 citations0 reviewsNo code linkedOpen access
preprint2019arXiv

Thermal Conductance Across Harmonic-matched Epitaxial Al-sapphire Heterointerfaces

A unified understanding of interfacial thermal transport is missing due to the complicated nature of interfaces which involves complex factors such as interfacial bonding, interfacial mixing, surface chemistry, crystal orientation, roughness, contamination, and interfacial disorder. This is especially true for metal nonmetal interfaces which incorporate multiple fundamental heat transport mechanisms such as elastic and inelastic phonon scattering as well as electron phonon coupling in the metal and across the interface. All these factors jointly affect thermal boundary conductance (TBC). As a result, the experimentally measured interfaces may not be the same as the ideally modelled interfaces, thus obfuscating any conclusions drawn from experimental and modeling comparisons. This work provides a systematic study of interfacial thermal conductance across well controlled and ultraclean epitaxial (111) Al parallel (0001) sapphire interfaces, known as harmonic matched interface. A comparison with thermal models such as atomistic Green s function (AGF) and a nonequilibrium Landauer approach shows that elastic phonon scattering dominates the interfacial thermal transport of Al sapphire interface. By scaling the TBC with the Al heat capacity, a nearly constant transmission coefficient is observed, indicating that the phonons on the Al side limits the Al sapphire TBC. This nearly constant transmission coefficient validates the assumptions in AGF and nonequilibrium Landauer calculations. Our work not only provides a benchmark for interfacial thermal conductance across metal nonmetal interfaces and enables a quantitative study of TBC to validate theoretical thermal carrier transport mechanisms, but also acts as a reference when studying how other factors impact TBC.

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