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Pablo Alonso-González

Pablo Alonso-González appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall cond-mat.mtrl-sci physics.optics physics.app-ph

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preprint2022arXiv

Twisted polaritonic crystals in thin van der Waals slabs

Polaritons - hybrid light-mater excitations - are very appealing for the confinement of light at the nanoscale. Recently, different kinds of polaritons have been observed in thin slabs of van der Waals (vdW) materials, with particular interest focused on phonon polaritons (PhPs) - lattice vibrations coupled to electromagnetic fields in the mid-infrared spectral range with - in biaxial crystals, such as e.g. MoO3. In particular, hyperbolic PhPs - having hyperbola-like shape of their isofrequency curves - in MoO3 can exhibit ultra-high momenta and strongly directional in-plane propagation, promising novel applications in imaging, sensing or thermal management at the nanoscale and in a planar geometry. However, the excitation and manipulation of in-plane hyperbolic PhPs have not yet been well studied and understood. Here we propose a technological platform for the effective excitation and control of in-plane hyperbolic PhPs based on polaritonic crystals (PCs) - lattices formed by elements separated by distances comparable to the PhPs wavelength -, twisted with respect to the natural vdW crystal axes. In particular, we develop a general analytical theory valid for an arbitrary PC made in a thin biaxial slab. As a practical example, we consider a twisted PC formed by rectangular hole arrays made in MoO3 slab and demonstrate the excitation of Bragg resonances tunable by the twisting angle. Our findings open novel avenues for both fundamental studies of PCs in vdW crystals and the development of mid-infrared sensing and photodetection applications

preprint2021arXiv

Germanium monosulfide as a natural platform for highly anisotropic THz polaritons

Terahertz (THz) electromagnetic radiation is key to optically access collective excitations such as magnons (spins), plasmons (electrons), or phonons (atomic vibrations), thus bridging between optics and solid-state physics. Confinement of THz light to the nanometer length scale is desirable for local probing of such excitations in low dimensional systems, thereby inherently circumventing the large footprint and low spectral density of far-field THz optics. For that purpose, phonon polaritons (PhPs, i.e., light coupled to lattice vibrations in polar crystals) in anisotropic van der Waals (vdW) materials have recently emerged as a promising platform for THz nanooptics; yet the amount of explored, viable materials is still exiguous. Hence, there is a demand for the exploration of novel materials that feature not only THz PhPs at different spectral regimes, but also exhibit unique anisotropic (directional) electrical, thermoelectric, and vibronic properties. To that end, we introduce here the semiconducting alpha-germanium(II) sulfide (GeS) as an intriguing candidate. By employing THz nano-spectroscopy supported by theoretical analysis, we provide a thorough characterization of the different in-plane hyperbolic and elliptical PhP modes in GeS. We find not only PhPs with long life times ($τ$ > 2 ps) and excellent THz light confinement ($λ_0/λ$ > 45), but also an intrinsic, phonon-induced anomalous dispersion as well as signatures of naturally occurring PhP canalization within one single GeS slab.

preprint2020arXiv

Infrared permittivity of the biaxial van der Waals semiconductor $α$-MoO$_3$ from near- and far-field correlative studies

The biaxial van der Waals semiconductor $α$-phase molybdenum trioxide ($α$-MoO$_3$) has recently received significant attention due to its ability to support highly anisotropic phonon polaritons (PhPs) -infrared (IR) light coupled to lattice vibrations in polar materials-, offering an unprecedented platform for controlling the flow of energy at the nanoscale. However, to fully exploit the extraordinary IR response of this material, an accurate dielectric function is required. Here, we report the accurate IR dielectric function of $α$-MoO$_3$ by modelling far-field, polarized IR reflectance spectra acquired on a single thick flake of this material. Unique to our work, the far-field model is refined by contrasting the experimental dispersion and damping of PhPs, revealed by polariton interferometry using scattering-type scanning near-field optical microscopy (s-SNOM) on thin flakes of $α$-MoO$_3$, with analytical and transfer-matrix calculations, as well as full-wave simulations. Through these correlative efforts, exceptional quantitative agreement is attained to both far- and near-field properties for multiple flakes, thus providing strong verification of the accuracy of our model, while offering a novel approach to extracting dielectric functions of nanomaterials, usually too small or inhomogeneous for establishing accurate models only from standard far-field methods. In addition, by employing density functional theory (DFT), we provide insights into the various vibrational states dictating our dielectric function model and the intriguing optical properties of $α$-MoO$_3$.

preprint2016arXiv

Thermoelectric detection of propagating plasmons in graphene

Controlling, detecting and generating propagating plasmons by all-electrical means is at the heart of on-chip nano-optical processing. Graphene carries long-lived plasmons that are extremely confined and controllable by electrostatic fields, however electrical detection of propagating plasmons in graphene has not yet been realized. Here, we present an all-graphene mid-infrared plasmon detector, where a single graphene sheet serves simultaneously as the plasmonic medium and detector. Rather than achieving detection via added optoelectronic materials, as is typically done in other plasmonic systems, our device converts the natural decay product of the plasmon---electronic heat---directly into a voltage through the thermoelectric effect. We employ two local gates to fully tune the thermoelectric and plasmonic behaviour of the graphene. High-resolution real-space photocurrent maps are used to investigate the plasmon propagation and interference, decay, thermal diffusion, and thermoelectric generation.

preprint2015arXiv

Near-field photocurrent nanoscopy on bare and encapsulated graphene

Opto-electronic devices utilizing graphene have already demonstrated unique capabilities, which are much more difficult to realize with conventional technologies. However, the requirements in terms of material quality and uniformity are very demanding. A major roadblock towards high-performance devices are the nanoscale variations of graphene properties, which strongly impact the macroscopic device behaviour. Here, we present and apply opto-electronic nanoscopy to measure locally both the optical and electronic properties of graphene devices. This is achieved by combining scanning near-field infrared nanoscopy with electrical device read-out, allowing infrared photocurrent mapping at length scales of tens of nanometers. We apply this technique to study the impact of edges and grain boundaries on spatial carrier density profiles and local thermoelectric properties. Moreover, we show that the technique can also be applied to encapsulated graphene/hexagonal boron nitride (h-BN) devices, where we observe strong charge build-up near the edges, and also address a device solution to this problem. The technique enables nanoscale characterization for a broad range of common graphene devices without the need of special device architectures or invasive graphene treatment.

preprint2014arXiv

Highly confined low-loss plasmons in graphene-boron nitride heterostructures

Graphene plasmons were predicted to possess ultra-strong field confinement and very low damping at the same time, enabling new classes of devices for deep subwavelength metamaterials, single-photon nonlinearities, extraordinarily strong light-matter interactions and nano-optoelectronic switches. While all of these great prospects require low damping, thus far strong plasmon damping was observed, with both impurity scattering and many-body effects in graphene proposed as possible explanations. With the advent of van der Waals heterostructures, new methods have been developed to integrate graphene with other atomically flat materials. In this letter we exploit near-field microscopy to image propagating plasmons in high quality graphene encapsulated between two films of hexagonal boron nitride (h-BN). We determine dispersion and particularly plasmon damping in real space. We find unprecedented low plasmon damping combined with strong field confinement, and identify the main damping channels as intrinsic thermal phonons in the graphene and dielectric losses in the h-BN. The observation and in-depth understanding of low plasmon damping is the key for the development of graphene nano-photonic and nano-optoelectronic devices.

preprint2013arXiv

Strong plasmon reflection at nanometer-size gaps in monolayer graphene on SiC

We employ tip-enhanced infrared near-field microscopy to study the plasmonic properties of epitaxial quasi-free-standing monolayer graphene on silicon carbide. The near-field images reveal propagating graphene plasmons, as well as a strong plasmon reflection at gaps in the graphene layer, which appear at the steps between the SiC terraces. When the step height is around 1.5 nm, which is two orders of magnitude smaller than the plasmon wavelength, the reflection signal reaches 20% of its value at graphene edges, and it approaches 50% for step heights as small as 5 nm. This intriguing observation is corroborated by numerical simulations, and explained by the accumulation of a line charge at the graphene termination. The associated electromagnetic fields at the graphene termination decay within a few nanometers, thus preventing efficient plasmon transmission across nanoscale gaps. Our work suggests that plasmon propagation in graphene-based circuits can be tailored using extremely compact nanostructures, such as ultra-narrow gaps. It also demonstrates that tip-enhanced near-field microscopy is a powerful contactless tool to examine nanoscale defects in graphene.

preprint2012arXiv

Optical nano-imaging of gate-tuneable graphene plasmons

The ability to manipulate optical fields and the energy flow of light is central to modern information and communication technologies, as well as quantum information processing schemes. However, as photons do not possess charge, controlling them efficiently by electrical means has so far proved elusive. A promising way to achieve electric control of light could be through plasmon polaritons - coupled excitations of photons and charge carriers - in graphene. In this two-dimensional sheet of carbon atoms, it is expected that plasmon polaritons and their associated optical fields can be readily tuned electrically by varying the graphene carrier density. While optical graphene plasmon resonances have recently been investigated spectroscopically, no experiments so far have directly resolved propagating plasmons in real space. Here, we launch and detect propagating optical plasmons in tapered graphene nanostructures using near-field scattering microscopy with infrared excitation light. We provide real-space images of plasmonic field profiles and find that the extracted plasmon wavelength is remarkably short - over 40 times smaller than the wavelength of illumination. We exploit this strong optical field confinement to turn a graphene nanostructure into a tunable resonant plasmonic cavity with extremely small mode volume. The cavity resonance is controlled in-situ by gating the graphene, and in particular, complete switching on and off of the plasmon modes is demonstrated, thus paving the way towards graphene-based optical transistors. This successful alliance between nanoelectronics and nano-optics enables the development of unprecedented active subwavelength-scale optics and a plethora of novel nano-optoelectronic devices and functionalities, such as tunable metamaterials, nanoscale optical processing and strongly enhanced light-matter interactions for quantum devices and (bio)sensors.