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P. Yang

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cond-mat.mtrl-sci cond-mat.str-el cond-mat.supr-con cond-mat.mes-hall physics.app-ph physics.ins-det

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preprint2022arXiv

Observation of perfect diamagnetism and interfacial effect on the electronic structures in Nd0.8Sr0.2NiO2 superconducting infinite layers

Nickel-based complex oxides have served as a playground for decades in the quest for a copper-oxide analog of the high-temperature superconductivity. They may provide clues towards understanding the mechanism and an alternative route for high-temperature superconductors. The recent discovery of superconductivity in the infinite-layer nickelate thin films has fulfilled this pursuit. However, material synthesis remains challenging, direct demonstration of perfect diamagnetism is still missing, and understanding of the role of the interface and bulk to the superconducting properties is still lacking. Here, we show high-quality Nd0.8Sr0.2NiO2 thin films with different thicknesses and demonstrate the interface and strain effects on the electrical, magnetic and optical properties. Perfect diamagnetism is achieved, confirming the occurrence of superconductivity in the films. Unlike the thick films in which the normal-state Hall-coefficient changes signs as the temperature decreases, the Hall-coefficient of films thinner than 5.5 nm remains negative, suggesting a thickness-driven band structure modification. Moreover, X-ray absorption spectroscopy reveals the Ni-O hybridization nature in doped infinite-layer nickelates, and the hybridization is enhanced as the thickness decreases. Consistent with band structure calculations on the nickelate/SrTiO3 heterostructure, the interface and strain effect induce a dominating electron-like band in the ultrathin film, thus causing the sign-change of the Hall-coefficient.

preprint2022arXiv

Superconductivity in infinite-layer nickelate La$_{1-x}$Ca$_x$NiO$_2$ thin films

We report the observation of superconductivity in infinite-layer Ca-doped LaNiO$_2$ (La$_{1-x}$Ca$_x$NiO$_2$) thin films and construct their phase diagram. Unlike the metal-insulator transition in Nd- and Pr-based nickelates, the undoped and underdoped La1-xCaxNiO2 thin films are entirely insulating from 300 K down to 2 K. A superconducting dome is observed at 0.15<x<0.3 with weakly insulating behavior at the overdoped regime. Moreover, the sign of the Hall coefficient $R_H$ changes at low temperature for samples with a higher doping level. However, distinct from the Nd- and Pr-based nickelates, the $R_H$-sign-change temperature remains at around 35 K as the doping increases, which begs further theoretical and experimental investigation in order to reveal the role of the 4f orbital to the (multi)band nature of the superconducting nickelates. Our results also emphasize the significant role of lattice correlation on the multiband structures of the infinite-layer nickelates.

preprint2021arXiv

Kondo effect and subatomic structures of single U atoms on graphene/6H-SiC(0001)

The Kondo effect typically arises from the spin-flip scattering between the localized magnetic moment of the impurity and the delocalized electrons in the metallic host, which leads to a variety of intriguing phenomena. Here, by using scanning tunnelling microscopy/spectroscopy (STM/STS), we present the Kondo effect and subatomic features of single U adatom on graphene/6H-SiC(0001). A dip spectral feature can be observed around the Fermi energy, which is termed as the "fingerprint" of the Kondo resonance in STS; in addition, two subatomic features with different symmetries: a three-lobe structure and a donghnut-like structure can be observed from the dI/dV maps. The Kondo resonance is only detectable within 5~Å~of the lateral distance from the U atom center, which is much smaller than the distances observed in Co atoms on different surfaces, indicating the more localized 5$f$ states than 3$d$ orbitals. By comparing with density functional theory calculations, we find that the two subatomic features displaying different symmetries originate from the selective hybridization between U 6$d$, 5$f$ orbitals and the $p_z$ orbitals from two inequivalent C atoms of the multilayer graphene.

preprint2020arXiv

Artificial two-dimensional polar metal by charge transfer to a ferroelectric insulator

Integrating multiple properties in a single system is crucial for the continuous developments in electronic devices. However, some physical properties are mutually exclusive in nature. Here, we report the coexistence of two seemingly mutually exclusive properties-polarity and two-dimensional conductivity-in ferroelectric Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin films at the LaAlO$_3$/Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ interface at room temperature. The polarity of a ~3.2 nm Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ thin film is preserved with a two-dimensional mobile carrier density of ~0.05 electron per unit cell. We show that the electronic reconstruction resulting from the competition between the built-in electric field of LaAlO$_3$ and the polarization of Ba$_{0.2}$Sr$_{0.8}$TiO$_3$ is responsible for this unusual two-dimensional conducting polar phase. The general concept of exploiting mutually exclusive properties at oxide interfaces via electronic reconstruction may be applicable to other strongly-correlated oxide interfaces, thus opening windows to new functional nanoscale materials for applications in novel nanoelectronics.

preprint2020arXiv

Charge collection properties of TowerJazz 180 nm CMOS Pixel Sensors in dependence of pixel geometries and bias parameters, studied using a dedicated test-vehicle: the Investigator chip

This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the TowerJazz 180 nm CMOS process. These results gave guidance for the optimisation of the diode implemented in ALPIDE, the chip used in the second generation Inner Tracking System of ALICE, and serve as reference for future simulation studies of similar devices. The studied parameters include: reverse substrate bias, epitaxial layer thickness, charge collection electrode size and the spacing of the electrode to surrounding in-pixel electronics. The results from pixels of 28 um pitch confirm that even in partially depleted circuits, charge collection can be fast (<10 ns), and quantify the influence of the parameters onto the signal sharing and amplitudes, highlighting the importance of a correct spacing between wells and of the impact of the reverse substrate bias.

preprint2015arXiv

Two-dimensional superconductor-insulator quantum phase transitions in an electron-doped cuprate

We use ionic liquid-assisted electric field effect to tune the carrier density in an electron-doped cuprate ultrathin film and cause a two-dimensional superconductor-insulator transition (SIT). The low upper critical field in this system allows us to perform magnetic field (B)-induced SIT in the liquid-gated superconducting film. Finite-size scaling analysis indicates that SITs induced both by electric and magnetic field are quantum phase transitions and the transitions are governed by percolation effects - quantum mechanical in the former and classical in the latter case. Compared to the hole-doped cuprates, the SITs in electron-doped system occur at critical sheet resistances (Rc) much lower than the pair quantum resistance RQ=h/(2e)2=6.45 kΩ, suggesting the possible existence of fermionic excitations at finite temperature at the insulating phase near SITs.

preprint2014arXiv

Bandgap Controlling of the Oxygen-Vacancy-Induced Two-Dimensional Electron Gas in SrTiO3

We report very large bandgap enhancement in SrTiO3 (STO) films (fabricated by pulsed laser deposition below 800 °C), which can be up to 20% greater than the bulk value, depending on the deposition temperature. The origin is comprehensively investigated and finally attributed to Sr/Ti antisite point defects, supported by density functional theory calculations. More importantly, the bandgap enhancement can be utilized to tailor the electronic and magnetic phases of the two-dimensional electron gas (2DEG) in STO-based interface systems. For example, the oxygen-vacancy-induced 2DEG (2DEG-V) at the interface between amorphous LaAlO3 and STO films is more localized and the ferromagnetic order in the STO-film-based 2DEG-V can be clearly seen from low-temperature magnetotransport measurements. This opens an attractive path to tailor electronic, magnetic and optical properties of STO-based oxide interface systems under intensive focus in the oxide electronics community. Meanwhile, our study provides key insight into the origin of the fundamental issue that STO films are difficult to be doped into the fully metallic state by oxygen vacancies.

preprint2011arXiv

Coexistence of Ferroelectric Triclinic Phases and Origin of Large Piezoelectric Responses in Highly Strained BiFeO3 films

The structural evolution of the strain-driven morphotropic phase boundary (MPB) in BiFeO3 films has been investigated using synchrotron x-ray diffractometry in conjunction with scanning probe microscopy. Our results demonstrate the existence of mixed-phase regions that are mainly made up of two heavily tilted ferroelectric triclinic phases. Analysis of first-principles computations suggests that these two triclinic phases originate from a phase separation of a single monoclinic state accompanied by elastic matching between the phase-separated states. These first-principle calculations further reveal that the intrinsic piezoelectric response of these two low-symmetry triclinic phases is not significantly large, which thus implies that the ease of phase transition between these two energetically close triclinic phases is likely responsible for the large piezoelectric response found in the BiFeO3 films near its MPB. These findings not only enrich the understandings of the lattice and domain structure of epitaxial BiFeO3 films but may also shed some light on the origin of enhanced piezoelectric response near MPB.

preprint2010arXiv

Was the "Critical Evidence" presented in the South Korean Official Cheonan Report Fabricated?

South Korean Joint Investigation Group (JIG) [1] presented two "critical scientific evidence" that link the sinking of the South Korean navy corvette Cheonan on March 26, 2010 to the alleged explosion of a North Korean torpedo: the now-infamous "No. 1" blue ink mark on the torpedo, and the electron-dispersive spectroscopy (EDS) and x-ray data of the three "adsorbed materials" extracted from the ship, the torpedo and a small-scale test-explosion. In our previous paper [2], we described the inconsistency of JIG's EDS and x-ray diffraction (XRD) data. Here we report our SEM, EDS, and x-ray experiments on an Al powder that underwent melting followed by rapid quenching, and our simulation of the EDS spectra of Al2O3 and Al(OH)3. We obtained an experimental value of 0.25 for the EDS intensity ratio, I(O)/I(Al), and a simulation result of I(O)/I(Al) ~ 0.23 for Al2O3 formed on the surface of the adsorbed materials during an explosion. The JIG's EDS data, however, showed very different values of ~ 0.9 for the same ratio. Interestingly, the high value of ~ 0.9 is expected for "rusted" aluminum, such as Al(OH)3, that can be formed by exposing Al to moisture or water. Our results indicate that the JIG's adsorbed materials taken from the ship and torpedo are not associated with any explosion, and that the JIG's EDS data of their test-explosion sample are most likely fabricated. Until the South Korean Joint Investigation Group (JIG) can convince the international scientific communities the validity of their data, their official conclusion that the torpedo sank the Cheonan ship should be discarded.