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P. V. Klimov

P. V. Klimov appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hall quant-ph cond-mat.mtrl-sci cond-mat.str-el physics.app-ph

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preprint2021arXiv

Realizing topologically ordered states on a quantum processor

The discovery of topological order has revolutionized the understanding of quantum matter in modern physics and provided the theoretical foundation for many quantum error correcting codes. Realizing topologically ordered states has proven to be extremely challenging in both condensed matter and synthetic quantum systems. Here, we prepare the ground state of the toric code Hamiltonian using an efficient quantum circuit on a superconducting quantum processor. We measure a topological entanglement entropy near the expected value of $\ln2$, and simulate anyon interferometry to extract the braiding statistics of the emergent excitations. Furthermore, we investigate key aspects of the surface code, including logical state injection and the decay of the non-local order parameter. Our results demonstrate the potential for quantum processors to provide key insights into topological quantum matter and quantum error correction.

preprint2020arXiv

Quantum well stabilized point defect spin qubits

Defect-based quantum systems in in wide bandgap semiconductors are strong candidates for scalable quantum-information technologies. However, these systems are often complicated by charge-state instabilities and interference by phonons, which can diminish spin-initialization fidelities and limit room-temperature operation. Here, we identify a pathway around these drawbacks by showing that an engineered quantum well can stabilize the charge state of a qubit. Using density-functional theory and experimental synchrotron x-ray diffraction studies, we construct a model for previously unattributed point defect centers in silicon carbide (SiC) as a near-stacking fault axial divacancy and show how this model explains these defect's robustness against photoionization and room temperature stability. These results provide a materials-based solution to the optical instability of color centers in semiconductors, paving the way for the development of robust single-photon sources and spin qubits.

preprint2013arXiv

Electrically driven spin resonance in silicon carbide color centers

We demonstrate that the spin of optically addressable point defects can be coherently driven with AC electric fields. Based on magnetic-dipole forbidden spin transitions, this scheme enables spatially confined spin control, the imaging of high-frequency electric fields, and the characterization of defect spin multiplicity. While we control defects in SiC, these methods apply to spin systems in many semiconductors, including the nitrogen-vacancy center in diamond. Electrically driven spin resonance offers a viable route towards scalable quantum control of electron spins in a dense array.