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P. Stoliar

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.other cond-mat.str-el

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preprint2014arXiv

Non thermal and purely electronic resistive transition in narrow gap Mott insulators

Mott insulator to metal transitions under electric field are currently the subject of numerous fundamental and applied studies. This puzzling effect, which involves non-trivial out-of-equilibrium effects in correlated systems, is indeed at play in the operation of a new class of electronic memories, the Mott memories. However the combined electronic and thermal effects are difficult to disentangle in Mott insulators undergoing such transitions. We report here a comparison between the properties under electric field of a canonical Mott insulator and a model built on a realistic 2D resistor network able to capture both thermal effects and electronic transitions. This comparison made specifically on the family of narrow gap Mott insulators AM4Q8, (A = Ga or Ge; M=V, Nb or Ta, and Q = S or Se) unambiguously establishes that the resistive transition experimentally observed under electric field arises from a purely electronic mechanism.

preprint2014arXiv

Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion

We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.

preprint2013arXiv

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

preprint2011arXiv

Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.