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M. J. Sánchez

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cond-mat.mes-hall chao-dyn cond-mat.mtrl-sci nlin.CD physics.app-ph cond-mat.other

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preprint2021arXiv

Optimization of the multi-mem response of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$

Memristive systems emerge as strong candidates for the implementation of Resistive Random Access Memories (RRAM) and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities such as memcapacitance could significantly improve the performance of bio-inspired devices in key issues such as energy consumption. However, the physics of mem-systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that undergo topotactic transitions and redox reactions show improved performance as mem-systems, compared to standard perovskites. In this paper we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox La$_{1/2}$Sr$_{1/2}$Mn$_{1/2}$Co$_{1/2}$O$_{3-x}$ (LSMCO) films grown on Nb:SrTiO$_3$ (NSTO). We explored devices with different crystallinity (from amorphous to epitaxial LSMCO), out-of-plane orientation ((001) and (110)) and stimulated either with voltage or current pulses. We found that an optimum memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes which could affect the device integrity and performance. Our work contributes to pave the way for the integration of LSMCO-based devices in cross-bar arrays, in order to exploit their memristive and memcapacitive properties for the development of neuromorphic or in-memory computing devices

preprint2019arXiv

Electric selective activation of memristive interfaces in TaO$_x$-based devices

The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta$_2$O$_5$-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counter-clockwise multilevel squared remanent resistance loops, just by controlling the (a)symmetry of the applied stimuli and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different zones of the active Ta$_2$O$_{5-x}$ layer: a central -- bulk -- one and two quasi-symmetric interfaces with reduced TaO$_{2-h(y)}$ layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide -- Ta-oxide -- and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple -- analogic -- intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

preprint2014arXiv

Thermal effects and switching kinetics in silver/manganite memristive systems: Probing oxygen vacancies diffusion

We investigate the switching kinetics of oxygen vacancies (Ov) diffusion in LPCMO-Ag memristive interfaces by performing experiments on the temperature dependence of the high resistance (HR) state under thermal cycling. Experimental results are well reproduced by numerical simulations based on thermally activated Ov diffusion processes and fundamental assumptions relying on a recent model proposed to explain bipolar resistive switching in manganite- based cells. The confident values obtained for activation energies and diffusion coefficient associated to Ov dynamics, constitute a validation test for both model predictions and Ov diffusion mechanisms in memristive interfaces.

preprint2013arXiv

Non-volatile multilevel resistive switching memory cell: A transition metal oxide-based circuit

We study the resistive switching (RS) mechanism as way to obtain multi-level memory cell (MLC) devices. In a MLC more than one bit of information can be stored in each cell. Here we identify one of the main conceptual difficulties that prevented the implementation of RS-based MLCs. We present a method to overcome these difficulties and to implement a 6-bit MLC device with a manganite-based RS device. This is done by precisely setting the remnant resistance of the RS-device to an arbitrary value. Our MLC system demonstrates that transition metal oxide non-volatile memories may compete with the currently available MLCs.

preprint2011arXiv

Asymmetric pulsing for reliable operation of titanium/manganite memristors

We present a pulsing protocol that significantly increases the endurance of a titanium-manganite interface used as a binary memory cell. The core of this protocol is an algorithm that searches for the proper values for the set and reset pulses, canceling the drift in the resistance values. A set of experiments show the drift-free operation for more than $10^{5}$ switching cycles, as well as the detrimental effect by changing the amplitude of pulses indicated by the protocol. We reproduced the results with a numerical model, which provides information on the dynamics of the oxygen vacancies during the switching cycles.

preprint2008arXiv

Anisotropic profiles in the spin polarization of multichannel semiconductor rings with Rashba spin orbit coupling

We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of the sample is anisotropic and exhibits different patterns and intensities at specific angular directions. This effect, reminiscent of the spin polarization drift induced by the application of an in plane electric field, could be used to manipulate and functionalize the spin polarization in electronic nanorings.

preprint2003arXiv

Finite size effects and localization properties of disordered quantum wires with chiral symmetry

Finite size effects in the localization properties of disordered quantum wires are analyzed through conductance calculations. Disorder is induced by introducing vacancies at random positions in the wire and thus preserving the chiral symmetry. For quasi one-dimensional geometries and low concentration of vacancies, an exponential decay of the mean conductance with the wire length is obtained even at the center of the energy band. For wide wires, finite size effects cause the conductance to decay following a non-pure exponential law. We propose an analytical formula for the mean conductance that reproduces accurately the numerical data for both geometries. However, when the concentration of vacancies increases above a critical value, a transition towards the suppression of the conductance occurs. This is a signature of the presence of ultra-localized states trapped in finite regions of the sample.

preprint2000arXiv

Enhancement of persistent currents due to confinement in metallic samples

Confinement and surface roughness (SR) effects on the magnitude of the persistent current are analized for ballistic bidimensional metallic samples. Depending on the particular geometry, localized border states can show up at half filling. These border states contribute coherently to the persistent current and its magnitude is enhanced with respect to their value in the absent of confinement. A linear scaling of the typical current $I_{typ}$ with the number of conduction channels M is obtained. This result is robust with respect to changes in the relevant lengths of the samples and to the SR. Possible links of our results to experiments are also discussed.

preprint1996arXiv

Characterization of Landau-Zener Transitions in Systems with Complex Spectra

This paper is concerned with the study of one-body dissipation effects in idealized models resembling a nucleus. In particular, we study the quantum mechanics of a free particle that collides elastically with the slowly moving walls of a Bunimovich stadium billiard. Our results are twofold. First, we develop a method to solve in a simple way the quantum mechanical evolution of planar billiards with moving walls. The formalism is based on the {\it scaling method} \cite{ver} which enables the resolution of the problem in terms of quantities defined over the boundary of the billiard. The second result is related to the quantum aspects of dissipation in systems with complex spectra. We conclude that in a slowly varying evolution the energy is transferred from the boundary to the particle through Landau$-$Zener transitions.

preprint1994arXiv

Decay of the Sinai Well in D dimensions

We study the decay law of the Sinai Well in $D$ dimensions and relate the behavior of the decay law to internal distributions that characterize the dynamics of the system. We show that the long time tail of the decay is algebraic ($1/t$), irrespective of the dimension $D$.