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P. San-Jose

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Published work

7 published item(s)

preprint2020arXiv

Nonlocality of Majorana Modes in Hybrid Nanowires

Spatial separation of Majorana zero modes distinguishes trivial from topological midgap states and is key to topological protection in quantum computing applications. Although signatures of Majorana zero modes in tunneling spectroscopy have been reported in numerous studies, a quantitative measure of the degree of separation, or nonlocality, of the emergent zero modes has not been reported. Here, we present results of an experimental study of nonlocality of emergent zero modes in superconductor-semiconductor hybrid nanowire devices. The approach takes advantage of recent theory showing that nonlocality can be measured from splitting due to hybridization of the zero mode in resonance with a quantum dot state at one end of the nanowire. From these splittings as well as anticrossing of the dot states, measured for even and odd occupied quantum dot states, we extract both the degree of nonlocality of the emergent zero mode, as well as the spin canting angles of the nonlocal zero mode. Depending on the device measured, we obtain either a moderate degree of nonlocality, suggesting a partially separated Andreev subgap state, or a highly nonlocal state consistent with a well-developed Majorana mode.

preprint2016arXiv

Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model

Semiconducting transition metal dichalcogenides present a complex electronic band structure with a rich orbital contribution to their valence and conduction bands. The possibility to consider the electronic states from a tight-binding model is highly useful for the calculation of many physical properties, for which first principle calculations are more demanding in computational terms when having a large number of atoms. Here, we present a set of Slater-Koster parameters for a tight-binding model that accurately reproduce the structure and the orbital character of the valence and conduction bands of single layer MX$_2$, where M = Mo,Wand X = S, Se. The fit of the analytical tight-binding Hamiltonian is done based on band structure from ab initio calculations. The model is used to calculate the optical conductivity of the different compounds from the Kubo formula.

preprint2015arXiv

Majorana Zero Modes in Graphene

A clear demonstration of topological superconductivity (TS) and Majorana zero modes remains one of the major pending goal in the field of topological materials. One common strategy to generate TS is through the coupling of an s-wave superconductor to a helical half-metallic system. Numerous proposals for the latter have been put forward in the literature, most of them based on semiconductors or topological insulators with strong spin-orbit coupling. Here we demonstrate an alternative approach for the creation of TS in graphene/superconductor junctions without the need of spin-orbit coupling. Our prediction stems from the helicity of graphene's zero Landau level edge states in the presence of interactions, and on the possibility, experimentally demonstrated, to tune their magnetic properties with in-plane magnetic fields. We show how canted antiferromagnetic ordering in the graphene bulk close to neutrality induces TS along the junction, and gives rise to isolated, topologically protected Majorana bound states at either end. We also discuss possible strategies to detect their presence in graphene Josephson junctions through Fraunhofer pattern anomalies and Andreev spectroscopy. The latter in particular exhibits strong unambiguous signatures of the presence of the Majorana states in the form of universal zero bias anomalies. Remarkable progress has recently been reported in the fabrication of the proposed type of junctions, which offers a promising outlook for Majorana physics in graphene systems.

preprint2014arXiv

Stacking boundaries and transport in bilayer graphene

Pristine bilayer graphene behaves in some instances as an insulator with a transport gap of a few meV. This behaviour has been interpreted as the result of an intrinsic electronic instability induced by many-body correlations. Intriguingly, however, some samples of similar mobility exhibit good metallic properties, with a minimal conductivity of the order of $2e^2/h$. Here we propose an explanation for this dichotomy, which is unrelated to electron interactions and based instead on the reversible formation of boundaries between stacking domains (`solitons'). We argue, using a numerical analysis, that the hallmark features of the previously inferred many-body insulating state can be explained by scattering on boundaries between domains with different stacking order (AB and BA). We furthermore present experimental evidence, reinforcing our interpretation, of reversible switching between a metallic and an insulating regime in suspended bilayers when subjected to thermal cycling or high current annealing.

preprint2010arXiv

Band topology and quantum spin Hall effect in bilayer graphene

We consider bilayer graphene in the presence of spin orbit coupling, to assess its behavior as a topological insulator. The first Chern number $n$ for the energy bands of single and bilayer graphene is computed and compared. It is shown that for a given valley and spin, $n$ in a bilayer is doubled with respect to the monolayer. This implies that bilayer graphene will have twice as many edge states as single layer graphene, which we confirm with numerical calculations and analytically in the case of an armchair terminated surface. Bilayer graphene is a weak topological insulator, whose surface spectrum is susceptible to gap opening under spin-mixing perturbations. We also assess the stability of the associated topological bulk state of bilayer graphene under various perturbations. Finally, we consider an intermediate situation in which only one of the two layers has spin orbit coupling, and find that although individual valleys have non-trivial Chern numbers, the spectrum as a whole is not gapped, so that the system is not a topological insulator.

preprint2010arXiv

Electron-induced rippling in graphene

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may place the graphene sheet very close to a quantum critical point characterized by the strong suppression of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories. In the presence of membrane tensions, ripple condensation may be reinforced or suppressed depending on the sign of the tension, following a zero-temperature buckling transition in which the order parameter is given essentially by the square of the gradient of the flexural phonon field.

preprint2007arXiv

Universal scaling of current fluctuations in disordered graphene

We analyze the full transport statistics of graphene with smooth disorder at low dopings. First we consider the case of 1D disorder for which the transmission probability distribution is given analytically in terms of the graphene-specific mean free path. All current cumulants are shown to scale with system parameters (doping, size, disorder strength and correlation length) in an identical fashion for large enough systems. In the case of 2D disorder, numerical evidence is given for the same kind of identical scaling of all current cumulants, so that the ratio of any two such cumulants is universal. Specific universal values are given for the Fano factor, which is smaller than the pseudodiffusive value of ballistic graphene (F=1/3) both for 1D (F=0.243) and 2D (F=0.295) disorder. On the other hand, conductivity in wide samples is shown to grow without saturation as \sqrt{L} and Log L with system length L in the 1D and 2D cases respectively.