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Source author record

P. S. Alekseev

P. S. Alekseev appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mes-hallcond-mat.mtrl-scicond-mat.dis-nncond-mat.str-el

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Published work

11 published item(s)

preprint2022arXiv

Rotational viscosity in spin resonance of hydrodynamic electrons

In novel ultra-pure materials electrons can form a viscous fluid, which is fundamentally different by its dynamics from the electron gas in ordinary conductors with significant density of defects. The shape of the non-stationary flow of such electron fluid is similar to the alternating flow of blood in large-radius arteries [J. R. Womersley, J. Physiol. 127, 552 (1955)]. The rotational viscosity effect is responsible for interconnection between the dynamics of electron spins and flow inhomogeneities. In particular, it induces the spin polarization of electrons in a curled flow via an internal spin-orbit torque acting on electron spins. Here we show that this effect in an electron fluid placed in a magnetic field leads to a correction to the ac sample impedance, which has a resonance at the Larmor frequency of electrons. In this way, via the electrically detected spin resonance the Womersley flow of an electron fluid can be visualized and the rotational viscosity can be measured.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Spin imaging of Poiseuille flow of viscous electronic fluid

Recent progress in fabricating high-quality conductors with small densities of defects has initiated the studies of the viscous electron fluid and has motivated the search for the evidences of the hydrodynamic regime of electron transport. In this work we come up with the spin imaging technique allowing us to attest to the emergence of electron hydrodynamic flows. Based on numerical calculations we demonstrate that the injected electron spin density is inhomogeneous across the channel when the viscous electron fluid forms the Poiseuille flow. We also argue that the Hanle curves at different positions across the channel acquire relative phase shifts resulting from the variation of the electron drift velocity in inhomogeneous hydrodynamic flows. The studied effects can be employed to evidence and study the viscous electron fluid non-invasively.

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preprint2021arXiv

Ballistic flow of two-dimensional electrons in a magnetic field

In conductors with a very small density of defects, electrons at low temperatures collide predominantly with the edges of a sample. Therefore, the ballistic regime of charge and heat transport is realized. The application of a perpendicular magnetic field substantially modifies the character of ballistic transport. For the case of two-dimensional (2D) electrons in the magnetic fields corresponding to the diameter of the cyclotron trajectories smaller than the sample width a hydrodynamic transport regime is formed. In the latter regime, the flow is mainly controlled by rare electron-electron collisions, which determine the viscosity effect. In this work, we study the ballistic flow of 2D electrons in long samples in magnetic fields up to the critical field of the transition to the hydrodynamic regime. From the solution of the kinetic equation, we obtain analytical formulas for the profiles of the current density and the Hall electric field far and near the ballistic-hydrodynamic transition as well as for the longitudinal and the Hall resistances in these ranges. Our theoretical results, apparently, describe the observed longitudinal resistance of pure graphene samples in the diapason of magnetic fields below the ballistic-hydrodynamic transition.

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preprint2021arXiv

Ballistic-hydrodynamic phase transition in flow of two-dimensional electrons

Phase transitions are characterized by a sharp change in the type of dynamics of microparticles, and their description usually requires quantum mechanics. Recently, a peculiar type of conductors was discovered in which two-dimensional (2D) electrons form a viscous fluid. In this work we reveal that such electron fluid in high-quality samples can be formed from ballistic electrons via a phase transition. For this purpose, we theoretically study the evolution of a ballistic flow of 2D weakly interacting electrons with an increase of magnetic field and trace an emergence of a fluid fraction at a certain critical field. Such restructuring of the flow manifests itself in a kink in magnetic-field dependencies of the longitudinal and the Hall resistances. It is remarkable that the studied phase transition has a classical-mechanical origin and is determined by both the ballistic size effects and the electron-electron scattering. Our analysis shows that this effect was apparently observed in the recent transport experiments on 2D electrons in graphene and high-mobility GaAs quantum wells.

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preprint2020arXiv

Viscosity of two-dimensional electrons

The hydrodynamic regime of electron transport has been recently realized in conductors with ultra-low densities of defects. Although relaxation processes in two-dimensional (2D) fluids have been studied in many theoretical works, the viscosity of the realistic Fermi gas of 2D electrons having the quadratic energy spectrum and interacting by Coulomb's law has not been reliably determined either in theory or in experiment up to now. Here we construct a theory of viscosity and thermal conductivity in such system. We compare the calculated viscosity of the 2D electron Fermi gas and the previously known viscosity of a 2D Fermi liquid with available experimental data extracted from the hydrodynamic negative magnetoresistance of the best-quality GaAs quantum wells. Based on this comparison, we argue that measurements of the temperature dependence of the viscosity can allow to trace the transition between an electron Fermi liquid and a Fermi gas.

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preprint2016arXiv

Negative magnetoresistance in viscous flow of two-dimensional electrons

At low temperatures, in very clean two-dimensional (2D) samples the electron mean free path for collisions with static defects and phonons becomes greater than the sample width. Under this condition, the electron transport occurs by formation of a viscous flow of an electron fluid. We study the viscous flow of 2D electrons in a magnetic field perpendicular to the 2D layer. We calculate the viscosity coefficients as the functions of magnetic field and temperature. The off-diagonal viscosity coefficient determines the dispersion of the 2D hydrodynamic waves. The decrease of the diagonal viscosity in magnetic field leads to negative magnetoresistance which is temperature- and size dependent. Our analysis demonstrates that the viscous mechanism is responsible for the giant negative magnetoresistance recently observed in the ultra-high-mobility GaAs quantum wells. We conclude that 2D electrons in that structures in moderate magnetic fields should be treated as a viscous fluid.

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preprint2015arXiv

Linear magnetoresistance in compensated graphene bilayer

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.

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preprint2015arXiv

Magnetoresistance of monolayer graphene with short-range scattering

We present magnetotransport measurements at classical magnetic fields for three graphene monolayers with various levels of disorder. A square root magnetoresistance (SRMR) behavior is observed in one sample which has the characteristic sub-linear conductivity signaling on the presence of short-range disorder in this sample. No square root MR was observed in other samples where short-range scattering is inessential as it is evident from the gate voltage dependences of their conductivities. Comparing our experimental data for the sample with theoretical calculations we found a good qualitative agreement and established the conditions which should be fulfilled in graphene to observe the SRMR experimentally.

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preprint2014arXiv

Magnetoresistance in two-component systems

Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in both disorder- and interaction-dominated regimes. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for semimetals and narrow-band semiconductors including most of the topological insulators.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Spin injection via (110)-grown semiconductor barriers

We study the tunneling of conduction electrons through a (110)-oriented single-barrier heterostructure grown from III-V semiconductor compounds. It is shown that, due to low spatial symmetry of such a barrier, the tunneling current through the barrier leads to an electron spin polarization. The inverse effect, generation of a direct tunneling current by spin polarized electrons, is also predicted. We develop the microscopic theory of the effects and show that the spin polarization emerges due to the combined action of the Dresselhaus spin-orbit coupling within the barrier and the Rashba spin-orbit coupling at the barrier interfaces.

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preprint2013arXiv

Strong magnetoresistance of disordered graphene

We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering time---depends in graphene not only on magnetic field $H$ but also on the electron energy $\varepsilon$. As a result, a strong, square-root in $H$, MR arises already within the Drude-Boltzmann approach. The MR is particularly pronounced near the Dirac point. Furthermore, for the same reason, "quantum" (separated Landau levels) and "classical" (overlapping Landau levels) regimes may coexist in the same sample at fixed $H.$ We calculate the conductivity tensor within the self-consistent Born approximation for the case of relatively high temperature, when Shubnikov-de Haas oscillations are suppressed by thermal averaging. We predict a square-root MR both at very low and at very high $H:$ $[\varrho_{xx}(H)-\varrho_{xx}(0)]/\varrho_{xx}(0)\approx C \sqrt{H},$ where $C$ is a temperature-dependent factor, different in the low- and strong-field limits and containing both "quantum" and "classical" contributions. We also find a nonmonotonic dependence of the Hall coefficient both on magnetic field and on the electron concentration. In the case of screened charged impurities, we predict a strong temperature-independent MR near the Dirac point. Further, we discuss the competition between disorder- and collision-dominated mechanisms of the MR. In particular, we find that the square-root MR is always established for graphene with charged impurities in a generic gated setup at low temperature.

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