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A. P. Dmitriev

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Published work

15 published item(s)

preprint2022arXiv

Shot noise in resonant tunneling: Role of inelastic scattering

We study the influence of inelastic processes on shot noise and the Fano factor for a one-dimensional double-barrier structure, where resonant tunneling takes place between two terminals. Most studies to date have found, by means of various approximate or phenomenological methods, that shot noise is insensitive to dephasing caused by inelastic scattering. In this paper, we explore the status of this statement by deriving a general Landaur-Büttiker-type formula that expresses the current noise and Fano factor in a one-dimensional conductor through inelastic scattering amplitudes. For a double-barrier structure, exact scattering amplitudes are calculated in the presence of a time-dependent potential. As an example of dephasing potential, we consider the one induced by equilibrium phonons. We calculate transmission coefficients of a double-barrier structure for these two types of phonon-induced dephasing. In the case of diffusive phase relaxation valid for one dimension phonons, the resonant level has a Lorentzian shape. For phonons whith high dimensions logarithmic dephasing realized which leads to an unusual shape of the size-quantized level characterized by the two energy scales. We further calculate the Fano factor for these types of dephasing, using exact expressions for inelastic transmission and reflection amplitudes. It turned out that when an integer number of levels fall into the energy window of width eV, where V is the voltage applied to the structure, the Fano factor is really insensitive to inelastic processes inside the structure and coincides with the prediction of phenomenological models with an accuracy of small corrections depending on these processes. On the contrary, at low voltages, when the eV window is smaller than the level width, this dependence is particularly pronounced and the phenomenological formula does not work.

preprint2020arXiv

Transparency enhancement in a double-barrier structure by the Fano antiresonance

We show that the presence of a side-attached state strongly modifies the transmission through a one-dimensional double-barrier system in the window of wavevectors around the Fano antiresonance. Specifically, the interplay between the Fano interference and the size quantization inside the structure gives rise to narrow resonant peaks in the transmission coefficient. The height of the peaks may become close to unity (perfect transmission) even for an asymmetric setup with strong barriers, where the transmission coefficient in the absence of the Fano state is strongly suppressed at all other wavevectors. Thus, the two types of the interference phenomena, each by itself leading to the suppression of the transmission, conspire in a peculiar way to produce the transparency enhancement.

preprint2020arXiv

Viscosity of two-dimensional electrons

The hydrodynamic regime of electron transport has been recently realized in conductors with ultra-low densities of defects. Although relaxation processes in two-dimensional (2D) fluids have been studied in many theoretical works, the viscosity of the realistic Fermi gas of 2D electrons having the quadratic energy spectrum and interacting by Coulomb's law has not been reliably determined either in theory or in experiment up to now. Here we construct a theory of viscosity and thermal conductivity in such system. We compare the calculated viscosity of the 2D electron Fermi gas and the previously known viscosity of a 2D Fermi liquid with available experimental data extracted from the hydrodynamic negative magnetoresistance of the best-quality GaAs quantum wells. Based on this comparison, we argue that measurements of the temperature dependence of the viscosity can allow to trace the transition between an electron Fermi liquid and a Fermi gas.

preprint2016arXiv

Ultranarrow resonance in Coulomb drag between quantum wires at coinciding densities

We investigate the influence of the chemical potential mismatch $Δ$ (different electron densities) on Coulomb drag between two parallel ballistic quantum wires. For pair collisions, the drag resistivity $ρ_{\rm D}(Δ)$ shows a peculiar anomaly at $Δ=0$ with $ρ_{\rm D}$ being finite at $Δ=0$ and vanishing at any nonzero $Δ$. The "bodyless" resonance in $ρ_{\rm D}(Δ)$ at zero $Δ$ is only broadened by processes of multi-particle scattering. We analyze Coulomb drag for finite $Δ$ in the presence of both two- and three-particle scattering within the kinetic equation framework, focusing on a Fokker-Planck picture of the interaction-induced diffusion in momentum space of the double-wire system. We describe the dependence of $ρ_{\rm D}$ on $Δ$ for both weak and strong intrawire equilibration due to three-particle scattering.

preprint2015arXiv

Linear magnetoresistance in compensated graphene bilayer

We report a nonsaturating linear magnetoresistance in charge-compensated bilayer graphene in a temperature range from 1.5 to 150 K. The observed linear magnetoresistance disappears away from charge neutrality ruling out the traditional explanation of the effect in terms of the classical random resistor network model. We show that experimental results qualitatively agree with a phenomenological two-fluid model taking into account electron-hole recombination and finite-size sample geometry.

preprint2014arXiv

Magnetoresistance in two-component systems

Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in both disorder- and interaction-dominated regimes. The phenomenon originates in the excess quasiparticle density developing near the edges of the sample due to the compensated Hall effect. The size of the boundary region is of the order of the electron-hole recombination length that is inversely proportional to the magnetic field. In narrow samples and at strong enough magnetic fields, the boundary region dominates over the bulk leading to linear magnetoresistance. Our results are relevant for semimetals and narrow-band semiconductors including most of the topological insulators.

preprint2013arXiv

Aharonov-Bohm conductance of a disordered single-channel quantum ring

We study the effect of weak disorder on tunneling conductance of a single-channel quantum ring threaded by magnetic flux. We assume that temperature is higher than the level spacing in the ring and smaller than the Fermi energy. In the absence of disorder, the conductance shows sharp dips (antiresonances) as a function of magnetic flux. We discuss different types of disorder and find that the short-range disorder broadens antiresonances, while the long-range one leads to arising of additional resonant dips. We demonstrate that the resonant dips have essentially non-Lorentzian shape. The results are generalized to account for the spin-orbit interaction which leads to splitting of the disorder-broadened resonant dips, and consequently to coexisting of two types of oscillations (both having the form of sharp dips): Aharonov-Bohm oscillations with magnetic flux and Aharonov-Casher oscillations with the strength of the spin-orbit coupling. We also discuss the effect of the Zeeman coupling.

preprint2013arXiv

Strong magnetoresistance of disordered graphene

We study theoretically magnetoresistance (MR) of graphene with different types of disorder. For short-range disorder, the key parameter determining magnetotransport properties---a product of the cyclotron frequency and scattering time---depends in graphene not only on magnetic field $H$ but also on the electron energy $\varepsilon$. As a result, a strong, square-root in $H$, MR arises already within the Drude-Boltzmann approach. The MR is particularly pronounced near the Dirac point. Furthermore, for the same reason, "quantum" (separated Landau levels) and "classical" (overlapping Landau levels) regimes may coexist in the same sample at fixed $H.$ We calculate the conductivity tensor within the self-consistent Born approximation for the case of relatively high temperature, when Shubnikov-de Haas oscillations are suppressed by thermal averaging. We predict a square-root MR both at very low and at very high $H:$ $[\varrho_{xx}(H)-\varrho_{xx}(0)]/\varrho_{xx}(0)\approx C \sqrt{H},$ where $C$ is a temperature-dependent factor, different in the low- and strong-field limits and containing both "quantum" and "classical" contributions. We also find a nonmonotonic dependence of the Hall coefficient both on magnetic field and on the electron concentration. In the case of screened charged impurities, we predict a strong temperature-independent MR near the Dirac point. Further, we discuss the competition between disorder- and collision-dominated mechanisms of the MR. In particular, we find that the square-root MR is always established for graphene with charged impurities in a generic gated setup at low temperature.

preprint2012arXiv

Coulomb drag between ballistic quantum wires

We develop a kinetic equation description of Coulomb drag between ballistic one-dimensional electron systems, which enables us to demonstrate that equilibration processes between right- and left-moving electrons are crucially important for establishing dc drag. In one-dimensional geometry, this type of equilibration requires either backscattering near the Fermi level or scattering with small momentum transfer near the bottom of the electron spectrum. Importantly, pairwise forward scattering in the vicinity of the Fermi surface alone is not sufficient to produce a nonzero dc drag resistivity $ρ_{\rm D}$, in contrast to a number of works that have studied Coulomb drag due to this mechanism of scattering before. We show that slow equilibration between two subsystems of electrons of opposite chirality, "bottlenecked" by inelastic collisions involving cold electrons near the bottom of the conduction band, leads to a strong suppression of Coulomb drag, which results in an activation dependence of $ρ_{\rm D}$ on temperature---instead of the conventional power law. We demonstrate the emergence of a drag regime in which $ρ_{\rm D}$ does not depend on the strength of interwire interactions, while depending strongly on the strength of interactions inside the wires.

preprint2011arXiv

High-temperature Aharonov-Bohm-Casher interferometer

We study theoretically the combined effect of the spin-orbit and Zeeman interactions on the tunneling electron transport through a single-channel quantum ring threaded by magnetic flux. We focus on the high temperature case (temperature is much higher than the level spacing in the ring) and demonstrate that spin-interference effects are not suppressed by thermal averaging. In the absence of the Zeeman coupling the high-temperature tunneling conductance of the ring exhibits two types of oscillations: Aharonov-Bohm oscillations with magnetic flux and Aharonov-Casher oscillations with the strength of the spin-orbit interaction. For weak tunneling coupling both oscillations have the form of sharp periodic antiresonances. In the vicinity of the antiresonances the tunneling electrons acquire spin polarization, so that the ring serves as a spin polarizer. We also demonstrate that the Zeeman coupling leads to appearance of two additional peaks both in the tunneling conductance and in the spin polarization.

preprint2010arXiv

Aharonov-Bohm conductance through a single-channel quantum ring: Persistent-current blockade and zero-mode dephasing

We study the effect of electron-electron interaction on transport through a tunnel-coupled single-channel ring. We find that the conductance as a function of magnetic flux shows a series of interaction-induced resonances that survive thermal averaging. The period of the series is given by the interaction strength $α$. The physics behind this behavior is the blocking of the tunneling current by the circular current. The main mechanism of dephasing is due to circular-current fluctuations. The dephasing rate is proportional to the tunneling rate and does not depend on $α$.

preprint2010arXiv

Electron spin decoherence in diluted magnetic quantum wells

We study electron spin dynamics in diluted magnetic quantum wells. The electrons are coupled by exchange interaction with randomly distributed magnetic ions polarized by magnetic field. This coupling leads to both spin relaxation and spin decoherence. We demonstrate that even very small spatial fluctuations of quantum well width dramatically increase rate of decoherence. Depending on the strength of exchange interaction and the amplitude of the fluctuations the decoherence can be homogeneous or inhomogeneous. In the homogeneous regime, the transverse (with respect to magnetic field) component of the electron spin decays on the short time scale exponentialy, while the long-time spin dynamics is non-exponential demonstrating long-lived power law tail. In the inhomogeneous case, the transverse spin component decays exponentially with the exponent quadratic in time.

preprint2010arXiv

Spin waves in diluted magnetic quantum wells

We study collective spin excitations in two-dimensional diluted magnetic semiconductors, placed into external magnetic field. Two coupled modes of the spin waves (the electron and ion modes) are found to exist in the system along with a number of the ion spin excitations decoupled from the electron system. We calculate analytically the spectrum of the waves taking into account the exchange interaction of itinerant electrons both with each other and with electrons localized on the magnetic ions. The interplay of these interactions leads to a number of intriguing phenomena including tunable anticrossing of the modes and a field-induced change in a sign of the group velocity of the ion mode.

preprint2010arXiv

Tunneling into a Luttinger liquid revisited

We study how electron-electron interactions renormalize tunneling into a Luttinger liquid beyond the lowest order of perturbation in the tunneling amplitude. We find that the conventional fixed point has a finite basin of attraction only in the point contact model, but a finite size of the contact makes it generically unstable to the tunneling-induced break up of the liquid into two independent parts. In the course of renormalization to the nonperturbative-in-tunneling fixed point, the tunneling conductance may show a nonmonotonic behavior with temperature or bias voltage.

preprint2006arXiv

Spin dynamics in the regime of hopping conductivity

We consider spin dynamics in the impurity band of a semiconductor with spin-split spectrum. Due to the splitting, phonon-assisted hops from one impurity to another are accompanied by rotation of the electron spin, which leads to spin relaxation. The system is strongly inhomogeneous because of exponential variation of hopping times. However, at very small couplings an electron diffuses over a distance exceeding the characteristic scale of the inhomogeneity during the time of spin relaxation, so one can introduce an averaged spin relaxation rate. At larger values of coupling the system is effectively divided into two subsystems: the one where relaxation is very fast and another one where relaxation is rather slow. In this case, spin decays due to escape of the electrons from one subsystem to another. As a result, the spin dynamics is non-exponential and hardly depends on spin-orbit coupling.