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Researcher profile

P. P. Das

P. P. Das contributes to research discovery and scholarly infrastructure.

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Published work

3 published item(s)

preprint2012arXiv

Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates

We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.

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preprint2011arXiv

Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact

The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.

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preprint2011arXiv

Influence of Impurity Scattering on the Conductance Anomalies of Quantum Point Contacts with Lateral Spin-Orbit Coupling

We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small model QPC2, three ingredients were found to be essential to generate the strong spin polarization: an asymmetric lateral confinement, a LSOC induced by the lateral confining potential of the QPC, and a strong electron-electron (e-e) interaction. In this paper, NEGF is used to study how the spin polarization is affected by the presence of impurities in the central portion of the QPC. It is found that the number, location, and shape of the conductance anomalies, occurring below the first quantized conductance plateau (G0=2e2/h), are strongly dependent on the nature (attractive or repulsive) and the locations of the impurities. We show that the maximum of the conductance spin polarization is affected by the presence of impurities. For QPCs with impurities off-center, a conductance anomaly appears below the first integer step even for the case of symmetric bias on the two side gates. These results are of practical importance if QPCs in series are to be used to fabricate all-electrical spin valves with large ON/OFF conductance ratio.

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