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Researcher profile

M. Cahay

M. Cahay contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.soft

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Published work

10 published item(s)

preprint2014arXiv

Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates

We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias asymmetry between the two side gates and depends on the polarity of the bias asymmetry. It is argued that hysteresis may constitute another indirect proof of spontaneous spin polarization in the narrow portion of the quantum point contact.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates

We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact

The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Improving the efficiency of organic light emitting diodes by use of a diluted light-emitting layer

The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum efficiency. The efficiency improvement is highly dependent on the thickness of the diluted light-emitting layer and driving current. Significant improvement seen at low current densities is explained in terms of effective hole confinement by the mixed layer while a modest decreases in efficiency at higher current densities may be attributed to luminescence quenching at the hole-transport layer/inert diluents material interface. The phenomena are demonstrated with three different inert diluents materials. A maximum external quantum efficiency improvement of about 40% is found for a diluted light-emitting layer thickness between 40 Å and 60 Å.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Influence of Impurity Scattering on the Conductance Anomalies of Quantum Point Contacts with Lateral Spin-Orbit Coupling

We have recently shown that asymmetric lateral spin orbit coupling (LSOC) resulting from the lateral in-plane electric field of the confining potential of a side-gated quantum point contact (QPC) can be used to create a strongly spin- polarized current by purely electrical means1 in the absence of applied magnetic field. Using the non-equilibrium Green function formalism (NEGF) analysis of a small model QPC2, three ingredients were found to be essential to generate the strong spin polarization: an asymmetric lateral confinement, a LSOC induced by the lateral confining potential of the QPC, and a strong electron-electron (e-e) interaction. In this paper, NEGF is used to study how the spin polarization is affected by the presence of impurities in the central portion of the QPC. It is found that the number, location, and shape of the conductance anomalies, occurring below the first quantized conductance plateau (G0=2e2/h), are strongly dependent on the nature (attractive or repulsive) and the locations of the impurities. We show that the maximum of the conductance spin polarization is affected by the presence of impurities. For QPCs with impurities off-center, a conductance anomaly appears below the first integer step even for the case of symmetric bias on the two side gates. These results are of practical importance if QPCs in series are to be used to fabricate all-electrical spin valves with large ON/OFF conductance ratio.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Spin Texture in Quantum Point Contacts in the Presence of Lateral Spin Orbit Coupling

A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2/h) which occur due to spontaneous spin polarization in the narrowest portion of the QPC. The number of observed conductance anomalies increases with increasing aspect ratio (length/width) of the QPC constriction. These anomalies are fingerprints of spin textures in the narrow portion of the QPC.

0 citations0 reviewsNo code linkedOpen access
preprint2009arXiv

Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts

A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spontaneous but insignificant spin polarization in the QPC. However, the spin polarization of the QPC is enhanced substantially when the effect of electron-electron interaction is included. The spin polarization is strong enough to result in the occurrence of a conductance plateau at 0.5G0 (G0 = 2e2/h) in the absence of any external magnetic field. In our simulations of a model QPC device, the 0.5 plateau is found to be quite robust and survives up to a temperature of 40K. The spontaneous spin polarization and the resulting magnetization of the QPC can be reversed by flipping the polarity of the source to drain bias or the potential difference between the two SGs. These numerical simulations are in good agreement with recent experimental results for side-gated QPCs made from the low band gap semiconductor InAs.

0 citations0 reviewsNo code linkedOpen access
preprint2004arXiv

Are spin junction transistors suitable for signal processing?

A number of spintronic junction transistors, that exploit the spin degree of freedom of an electron in addition to the charge degree of freedom, have been proposed to provide simultaneous non-volatile storage and signal processing functionality. Here, we show that some of these transistors unfortunately may not have sufficient voltage and current gains for signal processing. This is primarily because of a large output ac conductance and poor isolation between input and output. The latter also hinders unidirectional propagation of logic signal from the input of a logic gate to the output. Other versions of these transistors appear to have better gain and isolation, but not better than those of a conventional transistor. Therefore, these devices may not improve state-of-the-art signal processing capability, although they may provide additional functionality by offering non-volatile storage. They may also have niche applications in non-linear circuits.

0 citations0 reviewsNo code linkedOpen access
preprint2003arXiv

The Effect of Ramsauer Type Transmission Resonances on the Conductance Modulation of Spin Interferometers

We use a mean field approach to study the conductance modulation of gate controlled semiconductor spin interferometers based on the Rashba spin-orbit coupling effect. The conductance modulation is found to be mostly due to Ramsauer type transmission resonances rather than the Rashba effect in typical structures. This is because of significant reflections at the interferometer's contacts due to large potential barriers and effective mass mismatch between the contact material and the semiconductor. Thus, unless particular care is taken to eliminate these reflections, any observed conductance modulation of spin interferometers may have its origin in the Ramsauer resonances (which is unrelated to spin) rather than the Rashba effect.

0 citations0 reviewsNo code linkedOpen access