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Researcher profile

N. Bhandari

N. Bhandari contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mes-hallcond-mat.mtrl-scicond-mat.soft

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Published work

5 published item(s)

preprint2014arXiv

Hysteresis in the Conductance of Asymmetrically Biased GaAs Quantum Point Contacts with in-plane Side Gates

We have observed hysteresis between the forward and reverse sweeps of a common mode bias applied to the two in-plane side gates of an asymmetrically biased GaAs quantum point contact. The size of the hysteresis loop increases with the amount of bias asymmetry between the two side gates and depends on the polarity of the bias asymmetry. It is argued that hysteresis may constitute another indirect proof of spontaneous spin polarization in the narrow portion of the quantum point contact.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Tunable All Electric Spin Polarizer

We propose a new device to create a tunable all-electric spin polarizer: a quantum point contact (QPC) with four gates -- two in-plane side gates in series. The first pair of gates, near the source, is asymmetrically biased to create spin polarization in the QPC channel. The second set of gates, near the drain, is symmetrically biased and that bias is varied to maximize the amount of spin polarization in the channel. The range of common mode bias on the first set of gates over which maximum spin polarization can be achieved is much broader for the four gate structure compared with the case of a single pair of in-plane side gates.

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preprint2012arXiv

Spin Polarization in a AlGaAs/GaAs Quantum Point Contact with in-plane side gates

We report the observation of an anomalous conductance plateau near G = 0.5 G0 (G0 = 2e2/h) in asymmetrically biased AlGaAs/GaAs quantum point contacts (QPCs), with in-plane side gates in the presence of lateral spin-orbit coupling. This is a signature of spin polarization in the narrow portion of the QPC. The appearance and evolution of the conductance anomaly has been studied at T=4.2K as a function of the potential asymmetry between the side gates. The observation of spontaneous spin polarization in a side-gated GaAs QPC could eventually lead to the realization of an all-electric spin-valve at tens of degrees Kelvin.

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preprint2011arXiv

Anamolous conductance plateau in an asymmetrically biased InAs/InAlAs quantum point contact

The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of the potential asymmetry between the in-plane gates of the QPC. The anomalous plateau, a signature of spin polarization in the channel, appears only over an intermediate range (around 3 V) of bias asymmetry. It is quite robust, being observed over a maximum range of nearly 1V of the sweep voltage common to the two in-plane gates. Our conductance measurements show evidence of surface roughness scattering from the side walls of the QPC. We show that a strong perpendicular magnetic field leads to magnetic confinement in the channel which reduces the importance of scattering from the side walls and favors the onset of near ballistic transport through the QPC.

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preprint2011arXiv

Improving the efficiency of organic light emitting diodes by use of a diluted light-emitting layer

The use of a thin mixed layer consisting of an inert diluent material and a light emitting material between the hole-transport layer and electron-transport layer of organic light-emitting diodes leads to an increase in the external quantum efficiency. The efficiency improvement is highly dependent on the thickness of the diluted light-emitting layer and driving current. Significant improvement seen at low current densities is explained in terms of effective hole confinement by the mixed layer while a modest decreases in efficiency at higher current densities may be attributed to luminescence quenching at the hole-transport layer/inert diluents material interface. The phenomena are demonstrated with three different inert diluents materials. A maximum external quantum efficiency improvement of about 40% is found for a diluted light-emitting layer thickness between 40 Å and 60 Å.

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