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P. M. Ostrovsky

P. M. Ostrovsky contributes to research discovery and scholarly infrastructure.

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Published work

17 published item(s)

preprint2020arXiv

Anomalous Hall effect in 2D Rashba ferromagnet

Skew scattering on rare impurity configurations is shown to dominate the anomalous Hall effect in a 2D Rashba ferromagnet. The mechanism originates in scattering on rare impurity pairs separated by distances of the order of the Fermi wave length. Corresponding theoretical description goes beyond the conventional non-crossing approximation. The mechanism provides the only contribution to the anomalous Hall conductivity in the most relevant metallic regime and strongly modifies previously obtained results for lower energies in the leading order with respect to impurity strength.

preprint2013arXiv

Interaction and disorder effects in 3D topological insulator thin films

A theory of combined interference and interaction effects on the diffusive transport properties of 3D topological insulator surface states is developed. We focus on a slab geometry (characteristic for most experiments) and show that interactions between the top and bottom surfaces are important at not too high temperatures. We treat the general case of different surfaces (different carrier densities, uncorrelated disorder, arbitrary dielectric environment, etc.). In order to access the low-energy behavior of the system we renormalize the interacting diffusive sigma model in the one loop approximation. It is shown that intersurface interaction is relevant in the renormalization group (RG) sense and the case of decoupled surfaces is therefore unstable. An analysis of the emerging RG flow yields a rather rich behavior. We discuss realistic experimental scenarios and predict a characteristic non-monotonic temperature dependence of the conductivity. In the infrared (low-temperature) limit, the systems flows into a metallic fixed point. At this point, even initially different surfaces have the same transport properties. Investigating topological effects, we present a local expression of the $\mathbb Z_2$ theta term in the sigma model by first deriving the Wess-Zumino-Witten theory for class DIII by means of non-abelian bosonization and then breaking the symmetry down to AII. This allows us to study a response of the system to an external electromagnetic field. Further, we discuss the difference between the system of Dirac fermions on the top and bottom surfaces of a topological insulator slab and its non-topological counterpart in a double-well structure with strong spin-orbit interaction.

preprint2013arXiv

Quantum Corrections to the Polarizability and Dephasing in Isolated Disordered Metals

We study the quantum corrections to the polarizability of isolated metallic mesoscopic systems using the loop-expansion in diffusive propagators. We show that the difference between connected (grand-canonical ensemble) and isolated (canonical ensemble) systems appears only in subleading terms of the expansion, and can be neglected if the frequency of the external field, $ω$, is of the order of (or even slightly smaller than) the mean level spacing, $Δ$. If $ω\ll Δ$, the two-loop correction becomes important. We calculate it by systematically evaluating the ballistic parts (the Hikami boxes) of the corresponding diagrams and exploiting electroneutrality. Our theory allows one to take into account a finite dephasing rate, $γ$, generated by electron interactions, and it is complementary to the non-perturbative results obtained from a combination of Random Matrix Theory (RMT) and the $σ$-model, valid at $γ\to 0$. Remarkably, we find that the two-loop result for isolated systems with moderately weak dephasing, $γ\sim Δ$, is similar to the result of the RMT+$σ$-model even in the limit $ω\to 0$. For smaller $γ$, we discuss the possibility to interpolate between the perturbative and the non-perturbative results. We compare our results for the temperature dependence of the polarizability of isolated rings to the experimental data of Deblock \emph{et al} [\prl \ {\bf 84}, 5379 (2000); \prb \ {\bf 65}, 075301 (2002)], and we argue that the elusive 0D regime of dephasing might have manifested itself in the observed magneto-oscillations. Besides, we thoroughly discuss possible future measurements of the polarizability, which could aim to reveal the existence of 0D dephasing and the role of the Pauli blocking at small temperatures.

preprint2013arXiv

Quantum Hall criticality and localization in graphene with short-range impurities at the Dirac point

We explore the longitudinal conductivity of graphene at the Dirac point in a strong magnetic field with two types of short-range scatterers: adatoms that mix the valleys and "scalar" impurities that do not mix them. A scattering theory for the Dirac equation is employed to express the conductance of a graphene sample as a function of impurity coordinates; an averaging over impurity positions is then performed numerically. The conductivity $σ$ is equal to the ballistic value $4e^2/πh$ for each disorder realization provided the number of flux quanta considerably exceeds the number of impurities. For weaker fields, the conductivity in the presence of scalar impurities scales to the quantum-Hall critical point with $σ\simeq 4 \times 0.4 e^2/h$ at half filling or to zero away from half filling due to the onset of Anderson localization. For adatoms, the localization behavior is obtained also at half filling due to splitting of the critical energy by intervalley scattering. Our results reveal a complex scaling flow governed by fixed points of different symmetry classes: remarkably, all key manifestations of Anderson localization and criticality in two dimensions are observed numerically in a single setup.

preprint2013arXiv

Superconducting proximity effect in quantum wires without time-reversal symmetry

We study the superconducting proximity effect in a quantum wire with broken time-reversal (TR) symmetry connected to a conventional superconductor. We consider the situation of a strong TR-symmetry breaking, so that Cooper pairs entering the wire from the superconductor are immediately destroyed. Nevertheless, some traces of the proximity effect survive: for example, the local electronic density of states (LDOS) is influenced by the proximity to the superconductor, provided that localization effects are taken into account. With the help of the supersymmetric sigma model, we calculate the average LDOS in such a system. The LDOS in the wire is strongly modified close to the interface with the superconductor at energies near the Fermi level. The relevant distances from the interface are of the order of the localization length, and the size of the energy window around the Fermi level is of the order of the mean level spacing at the localization length. Remarkably, the sign of the effect is sensitive to the way the TR symmetry is broken: In the spin-symmetric case (orbital magnetic field), the LDOS is depleted near the Fermi energy, whereas for the broken spin symmetry (magnetic impurities), the LDOS at the Fermi energy is enhanced.

preprint2012arXiv

Coulomb drag in graphene near the Dirac point

We study Coulomb drag in double-layer graphene near the Dirac point. A particular emphasis is put on the case of clean graphene, with transport properties dominated by the electron-electron interaction. Using the quantum kinetic equation framework, we show that the drag becomes $T$-independent in the clean limit, $Tτ\to \infty$, where $T$ is temperature and $1/τ$ impurity scattering rate. For stronger disorder (or lower temperature), $Tτ\ll 1/α^2$, where $α$ is the interaction strength, the kinetic equation agrees with the leading-order ($α^2$) perturbative result. At still lower temperatures, $Tτ\ll 1$ (diffusive regime) this contribution gets suppressed, while the next-order ($α^3$) contribution becomes important; it yields a peak centered at the Dirac point with a magnitude that grows with lowering $Tτ$.

preprint2012arXiv

Coulomb drag in graphene: perturbation theory

We study the effect of Coulomb drag between two closely positioned graphene monolayers. In the limit of weak electron-electron interaction and small inter-layer spacing ($μ_{1(2)}, T\ll v/d$) the drag is described by a universal function of the chemical potentials of the layers $μ_{1(2)}$ measured in the units of temperature $T$. When both layers are tuned close to the Dirac point, then the drag coefficient is proportional to the product of the chemical potentials $ρ_D\proptoμ_1μ_2$. In the opposite limit of low temperature the drag is inversely proportional to both chemical potentials $ρ_D\propto T^2/(μ_1μ_2)$. In the mixed case where the chemical potentials of the two layers belong to the opposite limits $μ_1\ll T\llμ_2$ we find $ρ_D\propto μ_1/μ_2$. For stronger interaction and larger values of $d$ the drag coefficient acquires logarithmic corrections and can no longer be described by a power law. Further logarithmic corrections are due to the energy dependence of the impurity scattering time in graphene (for $μ_{1(2)}\gg T$ these are small and may be neglected). In the case of strongly doped (or gated) graphene $μ_{1(2)}\gg v/d\gg T$ the drag coefficient acquires additional dependence on the inter-layer spacing and we recover the usual Fermi-liquid result if the screening length is smaller than $d$.

preprint2012arXiv

Hybridization of wave functions in one-dimensional localization

A quantum particle can be localized in a disordered potential, the effect known as Anderson localization. In such a system, correlations of wave functions at very close energies may be described, due to Mott, in terms of a hybridization of localized states. We revisit this hybridization description and show that it may be used to obtain quantitatively exact expressions for some asymptotic features of correlation functions, if the tails of the wave functions and the hybridization matrix elements are assumed to have log-normal distributions typical for localization effects. Specifically, we consider three types of one-dimensional systems: a strictly one-dimensional wire and two quasi-one-dimensional wires with unitary and orthogonal symmetries. In each of these models, we consider two types of correlation functions: the correlations of the density of states at close energies and the dynamic response function at low frequencies. For each of those correlation functions, within our method, we calculate three asymptotic features: the behavior at the logarithmically large "Mott length scale", the low-frequency limit at length scale between the localization length and the Mott length scale, and the leading correction in frequency to this limit. In the several cases, where exact results are available, our method reproduces them within the precision of the orders in frequency considered.

preprint2012arXiv

Majorana state on the surface of a disordered 3D topological insulator

We study low-lying electron levels in an "antidot" capturing a coreless vortex on the surface of a three-dimensional topological insulator in the presence of disorder. The surface is covered with a superconductor film with a hole of size R larger than coherence length, which induces superconductivity via proximity effect. Spectrum of electron states inside the hole is sensitive to disorder, however, topological properties of the system give rise to a robust Majorana bound state at zero energy. We calculate the subgap density of states with both energy and spatial resolution using the supersymmetric sigma model method. Tunneling into the hole region is sensitive to the Majorana level and exhibits resonant Andreev reflection at zero energy.

preprint2012arXiv

Metal-insulator transition in 2D random fermion systems of chiral symmetry classes

Field-theoretical approach to Anderson localization in 2D disordered fermionic systems of chiral symmetry classes (BDI, AIII, CII) is developed. Important representatives of these symmetry classes are random hopping models on bipartite lattices at the band center. As was found by Gade and Wegner two decades ago within the sigma-model formalism, quantum interference effects in these classes are absent to all orders of perturbation theory. We demonstrate that the quantum localization effects emerge when the theory is treated non-perturbatively. Specifically, they are controlled by topological vortex-like excitations of the sigma models. We derive renormalization group equations including these non-perturbative contributions. Analyzing them, we find that the 2D disordered systems of chiral classes undergo a metal-insulator transition driven by topologically induced Anderson localization. We also show that the Wess-Zumino and Z_2 theta terms on surfaces of 3D topological insulators (in classes AIII and CII, respectively) overpower the vortex-induced localization.

preprint2010arXiv

Charge transport in graphene with resonant scatterers

The full counting statistics for the charge transport through an undoped graphene sheet in the presence of strong potential impurities is studied. Treating the scattering off the impurity in the s-wave approximation, we calculate the impurity correction to the cumulant generating function. This correction is universal provided the impurity strength is tuned to a resonant value. In particular, the conductance of the sample acquires a correction of 16e^2/(pi^2 h) per resonant impurity.

preprint2010arXiv

Color-dependent conductance of graphene with adatoms

We study ballistic transport properties of graphene with a low concentration of vacancies or adatoms. The conductance of graphene doped to the Dirac point is found to depend on the relative distribution of impurities among different sites of the honeycomb lattice labeled in general by six colors. The conductivity is shown to be sensitive to the crystal orientation if adatom sites have a preferred color. Our theory is confirmed by numerical simulations using recursive Green's functions with no adjustable parameters.

preprint2010arXiv

Coulomb interaction in graphene: Relaxation rates and transport

We analyze the inelastic electron-electron scattering in undoped graphene within the Keldysh diagrammatic approach. We demonstrate that finite temperature strongly affects the screening properties of graphene, which, in turn, influences the inelastic scattering rates as compared to the zero-temperature case. Focussing on the clean regime, we calculate the quantum scattering rate which is relevant for dephasing of interference processes. We identify an hierarchy of regimes arising due to the interplay of a plasmon enhancement of the scattering and finite-temperature screening of the interaction. We further address the energy relaxation and transport scattering rates in graphene. We find a non-monotonic energy dependence of the inelastic relaxation rates in clean graphene which is attributed to the resonant excitation of plasmons. Finally, we discuss the temperature dependence of the conductivity at the Dirac point in the presence of both interaction and disorder. Our results complement the kinetic-equation and hydrodynamic approaches for the collision-limited conductivity of clean graphene and can be generalized to the treatment of physics of inelastic processes in strongly non-equilibrium setups.

preprint2010arXiv

Diffusion and criticality in undoped graphene with resonant scatterers

A general theory is developed to describe graphene with arbitrary number of isolated impurities. The theory provides a basis for an efficient numerical analysis of the charge transport and is applied to calculate the minimal conductivity of graphene with resonant scatterers. In the case of smooth resonant impurities conductivity grows logarithmically with increasing impurity concentration, in agreement with renormalization group analysis for the symmetry class DIII. For vacancies (or strong on-site potential impurities) the conductivity saturates at a constant value that depends on the vacancy distribution among two sublattices as expected for the symmetry class BDI.

preprint2010arXiv

Full counting statistics in disordered graphene at Dirac point: From ballistics to diffusion

The full counting statistics of the charge transport through an undoped graphene sheet in the presence of smooth disorder is studied. At the Dirac point both in clean and diffusive limits, transport properties of a graphene sample are described by the universal Dorokhov distribution of transmission probabilities. In the crossover regime, deviations from universality occur which can be studied analytically both on ballistic and diffusive sides. In the ballistic regime, we use a diagrammatic technique with matrix Green functions. For a diffusive system, the sigma model is applied. Our results are in good agreement with recent numerical simulations of electron transport in disordered graphene.

preprint2009arXiv

Interaction-induced criticality in Z_2 topological insulators

Critical phenomena and quantum phase transitions are paradigmatic concepts in modern condensed matter physics. A central example in the field of mesoscopic physics is the localization-delocalization (metal-insulator) quantum phase transition driven by disorder -- the Anderson transition. Although the notion of localization has appeared half a century ago, this field is still full of surprising new developments. The most recent arenas where novel peculiar localization phenomena have been studied are graphene and topological insulators, i.e., bulk insulators with delocalized (topologically protected) states on their surface. Besides exciting physical properties, the topological protection renders such systems promising candidates for a variety of prospective electronic and spintronic devices. It is thus of crucial importance to understand properties of boundary metallic modes in the realistic systems when both disorder and interaction are present. Here we find a novel critical state which emerges in the bulk of two-dimensional quantum spin Hall (QSH) systems and on the surface of three-dimensional topological insulators with strong spin-orbit interaction due to the interplay of nontrivial Z_2 topology and the Coulomb repulsion. At low temperatures, this state possesses a universal value of electrical conductivity. In particular, we predict that the direct QSH phase transition occurs via this novel state. Remarkably, the interaction-induced critical state emerges on the surface of a three-dimensional topological insulator without any adjustable parameters. This ``self-organized quantum criticality'' is a novel concept in the field of interacting disordered systems.

preprint2009arXiv

Metallic proximity effect in ballistic graphene with resonant scatterers

We study the effect of resonant scatterers on the local density of states in a rectangular graphene setup with metallic leads. We find that the density of states in a vicinity of the Dirac point acquires a strong position dependence due to both metallic proximity effect and impurity scattering. This effect may prevent uniform gating of weakly-doped samples. We also demonstrate that even a single-atom impurity may essentially alter electronic states at low-doping on distances of the order of the sample size from the impurity.