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P. M. Krstajić

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cond-mat.mes-hall cond-mat.mtrl-sci cond-mat.other

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preprint2014arXiv

Plasmons and their interaction with electrons in trilayer graphene

The interaction between electrons and plasmons in trilayer graphene is investigated within the Overhauser approach resulting in the 'plasmaron' quasi-particle. This interaction is cast into a field theoretical problem, nd its effect on the energy spectrum is calculated using improved Wigner-Brillouin perturbation theory. The plasmaron spectrum is shifted with respect to the bare electron spectrum by $ΔE(\mathbf{k})\sim 50\div200\,{\rm meV}$ for ABC stacked trilayer graphene and for ABA trilayer graphene by $ΔE(\mathbf{k})\sim 30\div150\,{\rm meV}$ ( $ΔE(\mathbf{k})\sim 1\div5\,{\rm meV}$ ) for the hyperbolic linear) part of the spectrum. The shift in general increases with the electron concentration $n_{e}$ and electron momentum. The dispersion of plasmarons is more pronounced in \textit{ABC} stacked than in ABA tacked trilayer graphene, because of the different energy band structure and their different plasmon dispersion.

preprint2013arXiv

Energy-Momentum dispersion relation of plasmarons in bilayer graphene

The relation between the energy and momentum of plasmarons in bilayer graphene is investigated within the Overhauser approach, where the electron-plasmon interaction is described as a field theoretical problem. We find that the Dirac-like spectrum is shifted by $ΔE(\mathbf{k})\sim 100\div150\,{\rm meV}$ depending on the electron concentration $n_{e}$ and electron momentum. The shift increases with electron concentration as the energy of plasmons becomes larger. The dispersion of plasmarons is more pronounced than in the case of single layer graphene, which is explained by the fact that the energy dispersion of electrons is quadratic and not linear. We expect that these predictions can be verified using angle-resolved photoemission spectroscopy (ARPES).

preprint2010arXiv

Landau levels and magnetopolaron effect in dilute GaAs:N

The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological Band Anticrossing Model (BAC) which we extended in order to include magnetic field and electron - phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy.

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