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M. Helm

M. Helm appears in the imported research catalog. Authorship, coauthor and topic links are available while profile ownership is still unclaimed.

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cond-mat.mtrl-scicond-mat.mes-hallquant-phphysics.app-phphysics.opticscond-mat.othercond-mat.supr-con

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Published work

24 published item(s)

preprint2025arXiv

Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies

We report the experimental realization and optical characterization of chlorine-vacancy (ClV) color centers in 4H-SiC emitting in the fiber-optic telecom bands. These defects are created via chlorine ion implantation followed by high-temperature annealing. Photoluminescence spectroscopy reveals four distinct ClV configurations with zero-phonon lines (ZPLs) located in the O-band (1260 - 1360 nm), S-band (1460 - 1530 nm) and C-band (1530 - 1565 nm). Controlled implantation and annealing experiments confirm that the ClV centers originate specifically from chlorine incorporation into SiC and are not intrinsic to this material. We optimize the creation conditions for ClV ensembles and demonstrate negligible reduction of the ZPL intensity up to a temperature of 30 K. These results establish ClV defects as a new class of telecom-band color centers in a CMOS-compatible platform, offering strong potential for scalable quantum networks.

0 citations0 reviewsNo code linkedOpen access
preprint2024arXiv

Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams

Carbon implantation at the nanoscale is highly desired for the engineering of defect-based qubits in a variety of materials, including silicon, diamond, SiC and hBN. However, the lack of focused carbon ion beams does not allow for the full disclosure of their potential for application in quantum technologies. Here, we develop and use a carbon source for focused ion beams for the simultaneous creation of two types of quantum emitters in silicon, the W and G centers. Furthermore, we apply a multi-step implantation protocol for the programmable activation of the G centers with sub-100- nm resolution. This approach provides a route for significant enhancement of the creation yield of single G centers in carbon-free silicon wafers. Our experimental demonstration is an important step towards nanoscale engineering of telecom quantum emitters in silicon of high crystalline quality and isotope purity.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Critical behavior of the insulator-to-metal transition in Te-hyperdoped Si

Hyperdoping Si with chalcogens is a topic of great interest due to the strong sub-bandgap absorption exhibited by the resulting material, which can be exploited to develop broadband room-temperature infrared photodetectors using fully Si-compatible technology. Here, we report on the critical behavior of the impurity-driven insulator-to-metal transition in Te-hyperdoped Si layers fabricated via ion implantation followed by nanosecond pulsed-laser melting. Electrical transport measurements reveal an insulator-to-metal transition, which is also confirmed and understood by density functional theory calculations. We demonstrate that the metallic phase is governed by a power law dependence of the conductivity at temperatures below 25 K, whereas the conductivity in the insulating phase is well described by a variable-range hopping mechanism with a Coulomb gap at temperatures in the range of 2-50 K. These results show that the electron wave-function in the vicinity of the transition is strongly affected by the disorder and the electron-electron interaction.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Engineering telecom single-photon emitters in silicon for scalable quantum photonics

We create and isolate single-photon emitters with a high brightness approaching $10^5$ counts per second in commercial silicon-on-insulator (SOI) wafers. The emission occurs in the infrared spectral range with a spectrally narrow zero phonon line in the telecom O-band and shows a high photostability even after days of continuous operation. The origin of the emitters is attributed to one of the carbon-related color centers in silicon, the so-called G center, allowing purification with the $^{12}$C and $^{28}$Si isotopes. Furthermore, we envision a concept of a highly-coherent scalable quantum photonic platform, where single-photon sources, waveguides and detectors are integrated on a SOI chip. Our results provide a route towards the implementation of quantum processors, repeaters and sensors compatible with the present-day silicon technology.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Mapping the stray fields of a nanomagnet using spin qubits in SiC

We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surface of a SiC crystal. The stray fields cause shifts in the resonance frequency of the spin centers. The spin resonance is driven by a micrometer-sized microwave antenna patterned adjacent to the magnetic element. The patterning of the antenna is done to ensure that the driving microwave fields are delivered locally and more efficiently compared to conventional, millimeter-sized circuits. A clear difference in the resonance frequency of the spin centers in SiC is observed at various distances to the magnetic element, for two different magnetic states. Our results offer a wafer-scale platform to develop hybrid magnon-quantum applications by deploying local microwave fields and the stray field landscape at the micrometer lengthscale.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Suppressed Auger scattering and tunable light emission of Landau-quantized massless Kane electrons

The Landau level laser has been proposed a long time ago as a unique source of monochromatic radiation, widely tunable in the THz and infrared spectral ranges using an externally applied magnetic field. In spite of decades of efforts, this appealing concept never resulted in the design of a reliable device. This is due to efficient Auger scattering of Landau-quantized electrons, which is an intrinsic non-radiative recombination channel that eventually gains over cyclotron emission in all materials studied so far: in conventional semiconductors with parabolic bands, but also in graphene with massless electrons. The Auger processes are favored in these systems by Landau levels (or their subsets) equally spaced in energy. Here we show that this scheme does not apply to massless Kane electrons in gapless HgCdTe alloy, in which undesirable Auger scattering is strongly suppressed and the sizeable cyclotron emission observed, for the first time in the case of massless particles. The gapless HgCdTe thus appears as a material of choice for future technology of Landau level lasers.

0 citations0 reviewsNo code linkedOpen access
preprint2016arXiv

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP

The manganese induced magnetic, electrical and structural modification in InMnP epilayers, prepared by Mn ion implantation and pulsed laser annealing, are investigated in the following work. All samples exhibit clear hysteresis loops and strong spin polarization at the Fermi level. The degree of magnetization, the Curie temperature and the spin polarization depend on the Mn concentration. The bright-field transmission electron micrographs show that InP samples become almost amorphous after Mn implantation but recrystallize after pulsed laser annealing. We did not observe an insulator-metal transition in InMnP up to a Mn concentration of 5 at./%. Instead all InMnP samples show insulating characteristics up to the lowest measured temperature. Magneotresistance results obtained at low temperatures support the hopping conduction mechanism in InMnP. We find that the Mn impurity band remains detached from the valence band in InMnP up to 5 at./% Mn doping. Our findings indicate that the local environment of Mn ions in InP is similar to GaMnAs, GaMnP and InMnAs, however, the electrical properties of these Mn implanted III-V compounds are different. This is one of the consequences of the different Mn binding energy in these compounds.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Bandgap narrowing in Mn doped GaAs probed by room-temperature photoluminescence

The electronic band structure of the (Ga,Mn)As system has been one of the most intriguing problems in solid state physics over the past two decades. Determination of the band structure evolution with increasing Mn concentration is a key issue to understand the origin of ferromagnetism. Here we present room temperature photoluminescence and ellipsometry measurements of Ga_{100%-x}Mn_{x}As alloy. The up-shift of the valence-band is proven by the red shift of the room temperature near band gap emission from the Ga_{100%-x}Mn_{x}As alloy with increasing Mn content. It is shown that even a doping by 0.02 at.% of Mn affects the valence-band edge and it merges with the impurity band for a Mn concentration as low as 0.6 at.%. Both X-ray diffraction pattern and high resolution cross-sectional TEM images confirmed full recrystallization of the implanted layer and GaMnAs alloy formation.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Carbon p Electron Ferromagnetism in Silicon Carbide

Ferromagnetism can occur in wide-band gap semiconductors as well as in carbon-based materials when specific defects are introduced. It is thus desirable to establish a direct relation between the defects and the resulting ferromagnetism. Here, we contribute to revealing the origin of defect-induced ferromagnetism using SiC as a prototypical example. We show that the long-range ferromagnetic coupling can be attributed to the p electrons of the nearest-neighbor carbon atoms around the VSiVC divacancies. Thus, the ferromagnetism is traced down to its microscopic, electronic origin.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

High Curie temperature and perpendicular magnetic anisotropy in homoepitaxial InMnAs films

We have prepared the dilute magnetic semiconductor (DMS) InMnAs with different Mn concentrations by ion implantation and pulsed laser melting. The Curie temperature of the In1-xMnxAs epilayer depends on the Mn concentration x, reaching 82 K for x=0.105. The substitution of Mn ions at the Indium sites induces a compressive strain perpendicular to the InMnAs layer and a tensile strain along the in-plane direction. This gives rise to a large perpendicular magnetic anisotropy, which is often needed for the demonstration of electrical control of magnetization and for spin-transfer-torque induced magnetization reversal.

0 citations0 reviewsNo code linkedOpen access
preprint2015arXiv

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of around 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Ferromagnetism and impurity band in a new magnetic semiconductor: InMnP

We have synthesized ferromagnetic InMnP, a member of III-Mn-V ferromagnetic semiconductor family, by Mn ion implantation and pulsed laser annealing. Clear ferromagnetic hysteresis loops and a perpendicular magnetic anisotropy are observed up to a Curie temperature of 42 K. Large values of negative magnetoresistance and magnetic circular dichroism as well as anomalous Hall effect are further evidences of a ferromagnetic order in InMnP. An effort is made to understand the transport mechanism in InMnP using the theoretical models. We find that the valence band of InP does not merge with the impurity band of the heavily doped ferromagnetic InMnP. Our results suggest that impurity band conduction is a characteristic of Mn-doped III-V semiconductors which have deep Mn-acceptor levels.

0 citations0 reviewsNo code linkedOpen access
preprint2014arXiv

Origin and enhancement of the 1.3 um luminescence from GaAs treated by ion-implantation and flash lamp annealing

GaAs and GaAs based materials have outstanding optoelectronic properties and are widely used as light emitting media in devices. Many approaches have been applied to GaAs to generate luminescence at 0.88, 1.30, 1.55 um which are transmission windows of optical fibers. In this paper we present the photoluminescence at 1.30 um from deep level defects in GaAs treated by ion-implantation and flash lamp annealing (FLA). Such emission, which exhibits superior temperature stability, can be obtained from FLA treated virgin GaAs as well as doped GaAs. Indium-doping in GaAs can greatly enhance the luminescence. By photoluminescence, Raman measurements, and positron annihilation spectroscopy, we conclude that the origin of the 1.30 um emission is from transitions between the VAs-donor and X-acceptor pairs.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Systematic investigation of THz-induced excitonic Rabi splitting

Weak near-infrared and strong terahertz excitation are applied to study excitonic Rabi splitting in (GaIn)As/GaAs quantum wells. Pronounced anticrossing behavior of the split peaks is observed for different terahertz intensities and detunings relative to the intraexcitonic heavy-hole 1s-2p-transition. At intermediate to high electric fields the splitting becomes highly asymmetric and exhibits significant broadening. A fully microscopic theory is needed to explain the experimental results. Comparisons with a two-level model reveal the increasing importance of higher excitonic states at elevated excitation levels.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Using x-ray diffraction to identify precipitates in transition metal doped semiconductors

In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the observed ferromagnetism stems from carrier mediated magnetic impurities, ferromagnetic precipitates, or spinodal decomposition. In this paper, we have correlated the structural and magnetic properties of transition metal doped ZnO, TiO2, and Si, prepared by ion implantation. Crystalline precipitates, i.e., transition metal (Co, Ni) and Mn-silicide nanocrystals, are responsible for the magnetism. Additionally due to their orientation nature with respect to the host, these nanocrystals in some cases are not detectable by conventional x-ray diffraction (XRD). This nature results in the pitfall of using XRD to exclude magnetic precipitates in DMS materials.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Magnetic Mn5Ge3 nanocrystals embedded in crystalline Ge: a magnet/semiconductor hybrid synthesized by ion implantation

The integration of ferromagnetic Mn5Ge3 with the Ge matrix is promising for spin injection in a silicon-compatible geometry. In this paper, we report the preparation of magnetic Mn5Ge3 nanocrystals embedded inside the Ge matrix by Mn ions implantation at elevated temperature. By X-ray diffraction and transmission electron microscopy, we observe crystalline Mn5Ge3 with variable size depending on the Mn ion fluence. The electronic structure of Mn in Mn5Ge3 nanocrystals is 3d6 configuration, the same as in bulk Mn5Ge3. A large positive magnetoresistance has been observed at low temperatures. It can be explained by the conductivity inhomogeneity in the magnetic/semiconductor hybrid system.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Observation of Coulomb-Assisted Dipole-Forbidden Intraexciton Transitions in Semiconductors

We use terahertz pulses to induce resonant transitions between the eigenstates of optically generated exciton populations in a high-quality semiconductor quantum-well sample. Monitoring the excitonic photoluminescence, we observe transient quenching of the $1s$ exciton emission, which we attribute to the terahertz-induced $1s$-to-$2p$ excitation. Simultaneously, a pronounced enhancement of the $2s$-exciton emission is observed, despite the $1s$-to-$2s$ transition being dipole forbidden. A microscopic many-body theory explains the experimental observations as a Coulomb-scattering mixing of the 2$s$ and 2$p$ states, yielding an effective terahertz transition between the 1$s$ and 2$s$ populations.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Optical study of superconducting Ga-rich layers in silicon

We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting condensate and of the opening of an energy gap in the optical spectra. The London penetration depth, λ(T), and the condensate density, n_{s} = λ^{2} 0)/λ^{2}(T), as functions of temperature demonstrate behavior, typical for conventional superconductors with λ(0) = 1.8 μm. The terahertz spectra can be well described within the framework of Eliashberg theory with strong electron-phonon coupling: the zero-temperature energy gap is 2Δ(0) = 2.64 meV and 2Δ(0)/k_{B}T_{c} = 4.6 \pm 0.1, consistent with the amorphous state of Ga. At temperatures just above T_{c}, the optical spectra demonstrate Drude behavior.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Universal phase relation between longitudinal and transverse fields observed in focused terahertz beams

We directly observe longitudinal electromagnetic fields in focused freely propagating terahertz beams of radial and linear polarization. In accordance with theory, the longitudinal fields are phase shifted by a value of pi/2 with respect to the transverse field components. This behavior is found for all frequency components of single cycle THz radiation pulses. Additionally we show that the longitudinal field of a radially polarized THz beam has a smaller spot size as compared to the transverse field of a linearly polarized beam, that is focused under the same conditions.

0 citations0 reviewsNo code linkedOpen access
preprint2011arXiv

Near-field examination of perovskite-based superlenses and superlens-enhanced probe-object coupling

A planar slab of negative index material works as a superlens with sub-diffraction-limited imaging resolution, since propagating waves are focused and, moreover, evanescent waves are reconstructed in the image plane. Here, we demonstrate a superlens for electric evanescent fields with low losses using perovskites in the mid-infrared regime. The combination of near-field microscopy with a tunable free-electron laser allows us to address precisely the polariton modes, which are critical for super-resolution imaging. We spectrally study the lateral and vertical distributions of evanescent waves around the image plane of such a lens, and achieve imaging resolution of wavelength/14 at the superlensing wavelength. Interestingly, at certain distances between the probe and sample surface, we observe a maximum of these evanescent fields. Comparisons with numerical simulations indicate that this maximum originates from an enhanced coupling between probe and object, which might be applicable for multifunctional circuits, infrared spectroscopy, and thermal sensors.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Landau levels and magnetopolaron effect in dilute GaAs:N

The magnetic-field dependence of the energy spectrum of GaAs doped with nitrogen impurities is investigated. Our theoretical model is based on the phenomenological Band Anticrossing Model (BAC) which we extended in order to include magnetic field and electron - phonon interaction. Due to the highly localized nature of the nitrogen state, we find that the energy levels are very different from those of pure GaAs. The polaron correction results in a lower cyclotron resonance energy as compared to pure GaAs. The magneto-absorption spectrum exhibits series of asymmetric peaks close to the cyclotron energy.

0 citations0 reviewsNo code linkedOpen access
preprint2010arXiv

Tailoring the magnetism of GaMnAs films by ion irradiation

Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects.

0 citations0 reviewsNo code linkedOpen access