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Researcher profile

P. Ganesh

P. Ganesh contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate
cond-mat.mtrl-scicond-mat.str-elcond-mat.mes-hallcond-mat.softcond-mat.supr-conMachine Learningquant-ph

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Published work

9 published item(s)

preprint2026arXiv

pyRMG: A Framework for High-Throughput, Large-Cell DFT Calculations on Supercomputers

Exascale computing delivers the raw power to simulate ever larger and more chemically realistic systems, but realizing this potential requires codes that can efficiently use thousands of processors. Our real-space multigrid (RMG) density functional theory (DFT) code's grid-decomposition approach scales nearly linearly with the number of GPUs, even for simulations exceeding thousands of atoms. This scalability makes RMG a compelling tool for high-throughput DFT studies of materials that would otherwise be bottlenecked in other codes (for example, by global Fast Fourier Transforms in plane-wave DFT). However, the limited workflow infrastructure for RMG has thus far constrained its adoption to a small user community. In this work, we present pyRMG, a Python package designed to streamline the setup and execution of RMG DFT calculations. Built on the pymatgen and ASE computational materials science Python packages, pyRMG automates input generation and convergence checking, and integrates with modern job schedulers (e.g., Flux) on leadership-class platforms such as Frontier and Perlmutter. We demonstrate pyRMG for a high-throughput study of interfacial strain and twist-angle effects in lattice-matched, 2D Bi$_2$Se$_3$/NbSe$_2$ heterostructures, which offers chemical insights into this system and shows that RMG-based workflows can converge with limited user intervention.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Anharmonic stabilization of ferrielectricity in CuInP$_2$Se$_6$

Using first-principles calculations and group-theory based models, we study the stabilization of ferrielectricity (FiE) in CuInP$_2$Se$_6$. We find that the FiE ground state is stabilized by a large anharmonic coupling between the polar mode and a fully symmetric Raman-active mode. Our results open possibilities for controlling the single-step switching barrier for polarization by tuning the Raman-active mode. We discuss the implications of our findings in the context of designing next-generation optoelectronic devices that can overcome the voltage-time dilemma.

0 citations0 reviewsNo code linkedOpen access
preprint2022arXiv

Atomic structure generation from reconstructing structural fingerprints

Data-driven machine learning methods have the potential to dramatically accelerate the rate of materials design over conventional human-guided approaches. These methods would help identify or, in the case of generative models, even create novel crystal structures of materials with a set of specified functional properties to then be synthesized or isolated in the laboratory. For crystal structure generation, a key bottleneck lies in developing suitable atomic structure fingerprints or representations for the machine learning model, analogous to the graph-based or SMILES representations used in molecular generation. However, finding data-efficient representations that are invariant to translations, rotations, and permutations, while remaining invertible to the Cartesian atomic coordinates remains an ongoing challenge. Here, we propose an alternative approach to this problem by taking existing non-invertible representations with the desired invariances and developing an algorithm to reconstruct the atomic coordinates through gradient-based optimization using automatic differentiation. This can then be coupled to a generative machine learning model which generates new materials within the representation space, rather than in the data-inefficient Cartesian space. In this work, we implement this end-to-end structure generation approach using atom-centered symmetry functions as the representation and conditional variational autoencoders as the generative model. We are able to successfully generate novel and valid atomic structures of sub-nanometer Pt nanoparticles as a proof of concept. Furthermore, this method can be readily extended to any suitable structural representation, thereby providing a powerful, generalizable framework towards structure-based generation.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Enhancement of functional properties of V$_{0.6}$Ti$_{0.4}$ alloy superconductor by the addition of yttrium

We show here that the yttrium is immiscible and precipitates with various sizes in the body centred cubic V$_{0.6}$Ti$_{0.4}$ alloy superconductor. The number and size of the precipitates are found to depend on the amount of yttrium added. Precipitates with various sizes up to 30~$μ$m are found in the V$_{0.6}$Ti$_{0.4}$ alloy containing 5 at.\% yttrium. The large amount of line disorders generated by the addition of yttrium in this alloy are found to be effective in pinning the magnetic flux lines. While the superconducting transition temperature increases with the increasing amount of yttrium in the V$_{0.6}$Ti$_{0.4}$ alloy, the critical current density is maximum for the alloy containing 2 at. \% yttrium, where it is more than 7.5 times the parent alloy in fields higher than 1~T. We found that the effectiveness of each type of defect in pinning the flux lines is dependent on the temperature and the applied magnetic filed.

0 citations0 reviewsNo code linkedOpen access
preprint2021arXiv

Large Gap Quantum Anomalous Hall Effect in a Type-I Heterostructure Between a Magnetically Doped Topological Insulator and Antiferromagnetic Insulator

Heterostructures between topological insulators (TI) and magnetic insulators represent a pathway to realize the quantum anomalous Hall effect (QAHE). Using density functional theory based systematic screening and investigation of thermodynamic, magnetic and topological properties of heterostructures, we demonstrate that forming a type-I heterostructure between a wide gap antiferromagnetic insulator Cr$_2$O$_3$ and a TI-film, such as Sb$_2$Te$_3$, can lead to pinning of the Fermi-level at the center of the gap, even when magnetically doped. Cr-doping in the heterostructure increases the gap to $\sim$ 64.5 meV, with a large Zeeman energy from the interfacial Cr dopants, thus overcoming potential metallicity due to band bending effects. By fitting the band-structure around the Fermi-level to a 4-band k.p model Hamiltonian, we show that Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ is a Chern insulator with a Chern number C = -1. Transport calculations further show chiral edge-modes localized at the top/bottom of the TI-film to be the dominant current carriers in the material. Our predictions of a large interfacial magnetism due to Cr-dopants, that coupled antiferromagnetically to the AFM substrate is confirmed by our polarised neutron reflectometry measurements on MBE grown Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructures, and is consistent with a positive exchange bias measured in such systems recently. Consequently, Cr doped Sb$_2$Te$_3$/Cr$_2$O$_3$ heterostructure represents a promising platform for the development of functional topological magnetic devices, with high tunability.

0 citations0 reviewsNo code linkedOpen access
preprint2020arXiv

Doped NiO: the Mottness of a charge transfer insulator

The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the evolution of NiO under hole {\em and} electron doping using high-quality thin film and a wide range of experimental and theoretical methods. The evolution is in both cases very smooth with dopant concentration. The band gap is asymmetric under electron and hole doping, consistent with a charge-transfer insulator picture, and is reduced faster under hole than electron doping. For both electron and hole doping, occupied states are introduced at the top of the valence band. The formation of deep donor levels under electron doping and the inability to pin otherwise empty states near the conduction band edge is indicative that local electron addition and removal energies are dominated by a Mott-like Hubbard $U$-interaction even though the global bandgap is predominantly a charge-transfer type gap.

0 citations0 reviewsNo code linkedOpen access
preprint2018arXiv

Doping a Bad Metal: Origin of Suppression of Metal-Insulator Transition in Non-Stoichiometric VO$_2$

Rutile ($R$) phase VO$_2$ is a quintessential example of a strongly correlated bad-metal, which undergoes a metal-insulator transition (MIT) concomitant with a structural transition to a V-V dimerized monoclinic phase below T$_{MIT} \sim 340K$. It has been experimentally shown that one can control this transition by doping VO$_2$. In particular, doping with oxygen vacancies ($V_O$) has been shown to completely suppress this MIT {\em without} any structural transition. We explain this suppression by elucidating the influence of oxygen-vacancies on the electronic-structure of the metallic $R$ phase VO$_2$, explicitly treating strong electron-electron correlations using dynamical mean-field theory (DMFT) as well as diffusion Monte Carlo (DMC) flavor of quantum Monte Carlo (QMC) techniques. We show that $V_O$'s tend to change the V-3$d$ filling away from its nominal half-filled value, with the $e_{g}^π$ orbitals competing with the otherwise dominant $a_{1g}$ orbital. Loss of this near orbital polarization of the $a_{1g}$ orbital is associated with a weakening of electron correlations, especially along the V-V dimerization direction. This removes a charge-density wave (CDW) instability along this direction above a critical doping concentration, which further suppresses the metal-insulator transition. Our study also suggests that the MIT is predominantly driven by a correlation-induced CDW instability along the V-V dimerization direction.

0 citations0 reviewsNo code linkedOpen access
preprint2013arXiv

Spin-Resolved Self-Doping Tunes the Intrinsic Half-Metallicity of AlN Nanoribbons

We present a first-principles theoretical study of electric field-and strain-controlled intrinsic half-metallic properties of zigzagged aluminium nitride (AlN) nanoribbons. We show that the half-metallic property of AlN ribbons can undergo a transition into fully-metallic or semiconducting behavior with application of an electric field or uniaxial strain. An external transverse electric field induces a full charge screening that renders the material semiconducting. In contrast, as uniaxial strain varies from compressive to tensile, a spin-resolved selective self-doping increases the half-metallic character of the ribbons. The relevant strain-induced changes in electronic properties arise from band structure modifications at the Fermi level as a consequence of a spin-polarized charge transfer between pi-orbitals of the N and Al edge atoms in a spin-resolved self-doping process. This band structure tunability indicates the possibility ofdesigning magnetic nanoribbons with tunable electronic structure by deriving edge states from elements with sufficiently different localization properties. Finite temperature molecular dynamics reveal a thermally stable half-metallic nanoribbon up to room temperature.

0 citations0 reviewsNo code linkedOpen access
preprint2012arXiv

Understanding Controls on Interfacial Wetting at Epitaxial Graphene: Experiment and Theory

The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution X-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle θ_c = 73°) is substantially smaller than that of multilayer graphene (θ_c = 93°). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

0 citations0 reviewsNo code linkedOpen access