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P. Dorenbos

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cond-mat.mtrl-sci nucl-ex physics.ins-det

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preprint2012arXiv

Charge carrier mobility and nonproportionality of LaBr$_3$:Ce scintillators

The nonproportional response and related energy resolution of LaBr$_3$:Ce$^3+$ scintillation crystals doped with different concentrations of cerium were studied between 80K and 450K. For Ce$^3+$ concentration of 5% and 30%, LaBr$_3$ showed best proportionality and energy resolution at 80K. For LaBr$_3$:0.2%Ce$^3+$ the best energy resolution and the lowest degree of nonproportional response were instead observed around room temperature. The experimental results were analyzed in terms of charge carrier mobility and using theory of carrier transport in wide band gap semiconductors. We found that scattering of carriers by both lattice and impurity are the key processes determining the particular temperature dependence of carrier mobility and ultimately the scintillation nonproportionality. The calculated maximum of the LaBr$_3$:0.2%Ce$^3+$ carrier mobility corresponds well with the experimentally observed minima of its degree of nonproportionality, when assuming about 100ppm ionized impurity concentration.

preprint2011arXiv

Non-proportional scintillation response of NaI:Tl to low energy X-ray photons and electrons

Non-proportional response of the scintillation yield of NaI:Tl was measured using highly monochromatic synchrotron irradiation ranging from 9 to 100 keV. Special attention is paid to the X-ray escape peaks. They provide us additional information about non-proportional response in the range 0.9 to 12 keV. A rapid variation of the non-proportional response curve is observed near the Iodine K-electron binding energy. A dense sampling of data is performed around this energy and that data are used to apply a method, which we call K-dip spectroscopy. This method allows us to derive the electron response curve of NaI:Tl down to energies as low as 30 eV. A comparison of our data with data of others employing different methods is made. Advantages, limitations and peculiarities of presented techniques and methods are discussed.

preprint2010arXiv

Emission and Excitation Spectra of ZnO:Ga and ZnO:Ga,N Ceramics

The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, Em(0) = 3.367 +/- 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.