Researcher profile

P. Debray

P. Debray contributes to research discovery and scholarly infrastructure.

ResearcherAffiliation not importedOpen to collaborate

Trust snapshot

Quick read

Trust 17 - UnverifiedVerification L1Unclaimed author
4works
0followers
1topics
4close collaborators

Actions

Decide how to stay connected

Follow researcher0

Identity and collaboration

How to connect with this researcher

Claiming links this public author record to a researcher profile and unlocks direct collaboration workflows.

Log in to claim

Direct collaboration

Open a focused conversation when the fit is right

Claim this author entity first to unlock direct invitations.

Research graph

See the researcher in context

Open full explorer

Inspect adjacent work, topics, institutions and collaborators without jumping out to a separate graph page.

Building this graph slice

BZPEER is loading the nearby papers, people, topics and institutions for this page.

Published work

4 published item(s)

preprint2010arXiv

Spin Texture in Quantum Point Contacts in the Presence of Lateral Spin Orbit Coupling

A non-equilibrium Green's function formalism is used to study in detail the ballistic conductance of asymmetrically biased side-gated quantum point contacts (QPCs) in the presence of lateral spin-orbit coupling and electron-electron interaction for a wide range of QPC dimensions and gate bias voltage. Various conductance anomalies are predicted below the first quantized conductance plateau (G0=2e2/h) which occur due to spontaneous spin polarization in the narrowest portion of the QPC. The number of observed conductance anomalies increases with increasing aspect ratio (length/width) of the QPC constriction. These anomalies are fingerprints of spin textures in the narrow portion of the QPC.

preprint2009arXiv

Lateral spin-orbit interaction and spin polarization in quantum point contacts

We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric lateral confinement potentials, affects the spin polarization of the current. We find that even in the absence of external magnetic fields, a variable {\em non-zero spin polarization} can be obtained by controlling the asymmetric shape of the confinement potential. These results suggest a new approach to produce spin polarized electron sources and we study the dependence of this phenomenon on structural parameters and applied magnetic fields. This asymmetry-induced polarization provides also a plausible explanation of our recent observations of a 0.5 conductance plateau (in units of $2e^2/h$) in quantum point contacts made on InAs quantum-well structures. Although our estimates of the required spin-orbit interaction strength in these systems do not support this explanation, they likely play a role in the effects enhanced by electron-electron interactions.

preprint2009arXiv

Possible origin of the 0.5 plateau in the ballistic conductance of quantum point contacts

A non-equilibrium Green function formalism (NEGF) is used to study the conductance of a side-gated quantum point contact (QPC) in the presence of lateral spin-orbit coupling (LSOC). A small difference of bias voltage between the two side gates (SGs) leads to an inversion asymmetry in the LSOC between the opposite edges of the channel. In single electron modeling of transport, this triggers a spontaneous but insignificant spin polarization in the QPC. However, the spin polarization of the QPC is enhanced substantially when the effect of electron-electron interaction is included. The spin polarization is strong enough to result in the occurrence of a conductance plateau at 0.5G0 (G0 = 2e2/h) in the absence of any external magnetic field. In our simulations of a model QPC device, the 0.5 plateau is found to be quite robust and survives up to a temperature of 40K. The spontaneous spin polarization and the resulting magnetization of the QPC can be reversed by flipping the polarity of the source to drain bias or the potential difference between the two SGs. These numerical simulations are in good agreement with recent experimental results for side-gated QPCs made from the low band gap semiconductor InAs.