Abstract
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric lateral confinement potentials, affects the spin polarization of the current. We find that even in the absence of external magnetic fields, a variable {\em non-zero spin polarization} can be obtained by controlling the asymmetric shape of the confinement potential. These results suggest a new approach to produce spin polarized electron sources and we study the dependence of this phenomenon on structural parameters and applied magnetic fields. This asymmetry-induced polarization provides also a plausible explanation of our recent observations of a 0.5 conductance plateau (in units of ) in quantum point contacts made on InAs quantum-well structures. Although our estimates of the required spin-orbit interaction strength in these systems do not support this explanation, they likely play a role in the effects enhanced by electron-electron interactions.
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