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P. Borisov

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cond-mat.mtrl-sci cond-mat.mes-hall cond-mat.str-el physics.app-ph physics.optics

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preprint2022arXiv

Temperature control of diffusive memristor hysteresis and artificial neuron spiking

Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and disappearance of conduction pillars between device terminals due to the drift and diffusion of Ag nanoparticles in the dielectric matrix. This process is governed by the application of the voltage to the device contacts. Here, both in experiment and in theory we demonstrate that varying temperature offers an efficient control of memristor states and charges transport in the device. We found out that by raising and lowering the device temperature, one can reset the memristor state as well as change the residual time the memristor stays in high and low resistive states when the current spiking is generated in the memristive circuit at a constant applied voltage. Our theoretical model demonstrates a good qualitative agreement with the experiments and helps to explain the effects reported.

preprint2016arXiv

Magnetoelectric properties of 500 nm Cr2O3 films

The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magnetic moment on the AC electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the Néel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect.

preprint2015arXiv

Coherent control of injection currents in high-quality films of Bi2Se3

Films of the topological insulator Bi2Se3 are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy. Quantum interference control of photocurrents is observed by excitation with harmonically related pulses and detected by terahertz radiation. The injection current obeys the expected excitation irradiance dependence, showing linear dependence on the fundamental pulse irradiance and square-root irradiance dependence of the frequency-doubled optical pulses. The injection current also follows a sinusoidal relative-phase dependence between the two excitation pulses. These results confirm the third-order nonlinear optical origins of the coherently controlled injection current. Experiments are compared to a tight-binding band structure to illustrate the possible optical transitions that occur in creating the injection current.

preprint2013arXiv

Engineered spatial inversion symmetry breaking in an oxide heterostructure built from isosymmetric room-temperature magnetically ordered components

The oxide heterostructure [(YFeO$_3$)$_5$(LaFeO$_3$)$_5$]$_{40}$, which is magnetically ordered and piezoelectric at room temperature, has been constructed from two weak ferromagnetic AFeO$_3$ perovskites with different A cations using RHEED-monitored pulsed laser deposition. The polarisation arises through the removal of inversion centres present within the individual AFeO$_3$ components. This symmetry reduction is a result of combining ordering on the A site, imposed by the periodicity of the grown structure, with appropriate orientations of the octahedral tilting characteristic of the perovskite units themselves, according to simple symmetry-controlled rules. The polarisation is robust against A site interdiffusion between the two layers which produces a sinusoidally modulated occupancy that retains the coupling of translational and point symmetries required to produce a polar structure. Magnetization and magneto-optical Kerr rotation measurements show that the heterostructure's magnetic structure is similar to that of the individual components. Evidence of the polarity was obtained from second harmonic generation and piezoelectric force microscopy measurements. Modeling of the piezoresponse allows extraction of $d_{33}$ (approximately 10 pC/N) of the heterostructure, which is in agreement with DFT calculations.

preprint2010arXiv

Interface driven magnetoelectric effects in granular CrO2

Antiferromagnetic and magnetoelectric Cr2O3-surfaces strongly affect the electronic properties in half metallic CrO2. We show the presence of a Cr2O3 surface layer on CrO3 grains by high-resolution transmission electron microscopy. The effect of these surface layers is demonstrated by measurements of the temperature variation of the magnetoelectric susceptibility. A major observation is a sign change at about 100 K followed by a monotonic rise as a function of temperature. These electric field induced moments in CrO3 are correlated with the magnetoelectric susceptibility of pure Cr2O3. This study indicates that it is important to take into account the magnetoelectric character of thin surface layers of Cr2O3 in granular CrO2 for better understanding the transport mechanism in this system. The observation of a finite magnetoelectric susceptibility near room temperature may find utility in device applications.