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P. A. van Aken

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6 publications

preprint2022arXiv

Crystallization of heavy fermions via epitaxial strain in spinel LiV2_{2}O4_{4} thin film

The mixed-valent spinel LiV2_{2}O4_{4} is known as the first oxide heavy-fermion system. There is a general consensus that a subtle interplay of charge, spin, and orbital degrees of freedom of correlated electrons plays a crucial role in the enhancement of quasi-particle mass, but the specific mechanism has remained yet elusive. A charge-ordering (CO) instability of V3+^{3+} and V4+^{4+} ions that is geometrically frustrated by the V pyrochlore sublattice from forming a long-range CO down to TT = 0 K has been proposed as a prime candidate for the mechanism. To uncover the hidden CO instability, we applied epitaxial strain from a substrate on single-crystalline thin films of LiV2_{2}O4_{4}. Here we show a strain-induced crystallization of heavy fermions in a LiV2_{2}O4_{4} film on MgO, where a charge-ordered insulator comprising of a stack of V3+^{3+} and V4+^{4+} layers along [001], the historical Verwey-type ordering, is stabilized by the in-plane tensile and out-of-plane compressive strains from the substrate. Our discovery of the [001] Verwey-type CO, together with previous realizations of a distinct [111] CO, evidence the close proximity of the heavy-fermion state to degenerate CO states mirroring the geometrical frustration of the pyrochlore lattice, which supports the CO instability scenario for the mechanism behind the heavy-fermion formation.

preprint2022arXiv

Pauli-limit violation in lanthanide infinite-layer nickelate superconductors

Superconductivity can be destroyed by a magnetic field with an upper bound known as the Pauli-limit in spin-singlet superconductors. Almost all the discovered superconductors are spin-singlet, with the highest transition temperature TcT_c at ambient pressure achieved in the cuprate family. The closest cuprate analogue is the recently discovered infinite-layer nickelate, which hosts substantial structural and electronic similarity to the cuprate. A previous magnetotransport study on Nd0.775_{0.775}Sr0.225_{0.225}NiO2_2 has observed an isotropic Pauli-limited upper critical field. Here, we report a large violation (>2 times) of Pauli-limit in every crystallographic directions in La1−x_{1-x}(Ca/Sr)x_xNiO2_2 regardless of the doping xx. Such a large violation of the Pauli-limit in all directions in La1−x_{1-x}(Ca/Sr)x_xNiO2_2 is unexpected and unlikely accounted by a Fulde Ferrell-Larkin-Ovchinnikov (FFLO)-state, strong spin-orbit-coupling, strong-coupling or a large pseudogap. On the other hand, in agreement with the previous report, we observe a Pauli-limiting critical field in Nd1−x_{1-x}Srx_xNiO2_2 and the superconducting anisotropy decreases as doping increases, suggesting a spin-singlet pairing. Therefore, superconductivity in La1−x_{1-x}(Ca/Sr)x_xNiO2_2 could be driven by a non-spin-singlet Cooper pairing mechanism with an attractive high-TcT_c at 10 K, an order of magnitude higher than the known spin triplet superconductors, favourably extending the application of spin-triplet superconductivity in topological matter, non-dissipative spintronics, and quantum computing.

preprint2021arXiv

Coupling of electronic and structural degrees of freedom in vanadate superlattices

Heterostructuring provides different ways to manipulate the orbital degrees of freedom and to tailor orbital occupations in transition metal oxides. However, the reliable prediction of these modifications remains a challenge. Here, we present a detailed investigation of the relationship between the crystal and electronic structure in YVO3_3-LaAlO3_3 superlattices by combining ab initio theory, scanning transmission electron microscopy, and x-ray diffraction. Density functional theory simulations including an on-site Coulomb repulsion term, accurately predict the crystal structure and in conjunction with x-ray diffraction, provide an explanation for the lifting of degeneracy of the vanadium dxzd_{xz} and dyzd_{yz} orbitals, that was recently observed in this system. In addition, we unravel the combined effects of electronic confinement and octahedral connectivity by disentangling their impact from that of epitaxial strain. Our results demonstrate that the specific orientation of the substrate and the thickness of the YVO3_3 slabs in the multilayer, can be utilized to reliably engineer orbital polarization.

preprint2016arXiv

Long-range charge density wave proximity effect at cuprate-manganate interfaces

The interplay between charge density waves (CDWs) and high-temperature superconductivity is currently under intense investigation. Experimental research on this issue is difficult because CDW formation in bulk copper-oxides is strongly influenced by random disorder, and a long-range-ordered CDW state in high magnetic fields is difficult to access with spectroscopic and diffraction probes. Here we use resonant x-ray scattering in zero magnetic field to show that interfaces with the metallic ferromagnet La2/3_{2/3}Ca1/3_{1/3}MnO3_3 greatly enhance CDW formation in the optimally doped high-temperature superconductor YBa2_2Cu3_3O6+δ_{6+δ} (δ∼1\bf δ\sim 1), and that this effect persists over several tens of nm. The wavevector of the incommensurate CDW serves as an internal calibration standard of the charge carrier concentration, which allows us to rule out any significant influence of oxygen non-stoichiometry, and to attribute the observed phenomenon to a genuine electronic proximity effect. Long-range proximity effects induced by heterointerfaces thus offer a powerful method to stabilize the charge density wave state in the cuprates, and more generally, to manipulate the interplay between different collective phenomena in metal oxides.

preprint2015arXiv

Field Effect Transistors with Sub-Micrometer Gate Lengths Fabricated from LaAlO3_3-SrTiO3_3-Based Heterostructures

The possible existence of short-channel effects in oxide field-effect transistors is investigated by exploring field-effect transistors with various gate lengths fabricated from LaAlO3_3-SrTiO3_3 heterostructures. The studies reveal the existence of channel-length modulation and drain-induced barrier lowering for gate lengths below 1 μm, with a characteristic behavior comparable to semiconducting devices. With the fabrication of field-effect transistors with gate lengths as small as 60 nm the results demonstrate the possibility to fabricate by electron-beam lithography functional devices based on complex oxides with characteristic lengths of several ten nanometers.

preprint2012arXiv

Ruddlesden-Popper faults in LaNiO3/LaAlO3 superlattices

Scanning transmission electron microscopy in combination with electron energy-loss spectroscopy is used to study LaNiO3/LaAlO3 superlattices grown on (La,Sr)AlO4 with varying single-layer thicknesses which are known to control their electronic properties. The microstructure of the films is investigated on the atomic level and the role of observed defects is discussed in the context of the different properties. Two types of Ruddlesden-Popper faults are found which are either two or three dimensional. The common planar Ruddlesden-Popper fault is induced by steps on the substrate surface. In contrast, the three-dimensionally arranged Ruddlesden-Popper fault, whose size is in the nanometer range, is caused by the formation of local stacking faults during film growth. Furthermore, the interfaces of the superlattices are found to show different sharpness, but the microstructure does not depend substantially on the single-layer thickness.

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