Researcher profile

E. Benckiser

E. Benckiser contributes to research discovery and scholarly infrastructure.

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Published work

2 published item(s)

preprint2021arXiv

A superlattice approach to doping infinite-layer nickelates

The recent observation of superconductivity in infinite-layer Nd$_{1-x}$Sr$_x$NiO$_2$ thin films has attracted a lot of attention, since this compound is electronically and structurally analogous to the superconducting cuprates. Due to the challenges in the phase stabilization upon chemical doping with Sr, we synthesized artificial superlattices of LaNiO$_3$ embedded in insulating LaGaO$_3$, and used layer-selective topotactic reactions to reduce the nickelate layers to LaNiO$_{2}$. Hole doping is achieved via interfacial oxygen atoms and tuned via the layer thickness. We used electrical transport measurements, transmission electron microscopy, and x-ray spectroscopy together with ab initio calculations to track changes in the local nickel electronic configuration upon reduction and found that these changes are reversible. Our experimental and theoretical data indicate that the doped holes are trapped at the interfacial quadratic pyramidal Ni sites. Calculations for electron-doped cases predict a different behavior, with evenly distributed electrons among the layers, thus opening up interesting perspectives for interfacial doping of transition metal oxides.

preprint2021arXiv

Coupling of electronic and structural degrees of freedom in vanadate superlattices

Heterostructuring provides different ways to manipulate the orbital degrees of freedom and to tailor orbital occupations in transition metal oxides. However, the reliable prediction of these modifications remains a challenge. Here, we present a detailed investigation of the relationship between the crystal and electronic structure in YVO$_3$-LaAlO$_3$ superlattices by combining ab initio theory, scanning transmission electron microscopy, and x-ray diffraction. Density functional theory simulations including an on-site Coulomb repulsion term, accurately predict the crystal structure and in conjunction with x-ray diffraction, provide an explanation for the lifting of degeneracy of the vanadium $d_{xz}$ and $d_{yz}$ orbitals, that was recently observed in this system. In addition, we unravel the combined effects of electronic confinement and octahedral connectivity by disentangling their impact from that of epitaxial strain. Our results demonstrate that the specific orientation of the substrate and the thickness of the YVO$_3$ slabs in the multilayer, can be utilized to reliably engineer orbital polarization.