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Ossi Lehtinen

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cond-mat.mtrl-sci cond-mat.mes-hall physics.ins-det physics.optics

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preprint2015arXiv

Implantation and atomic scale investigation of self-interstitials in graphene

Crystallographic defects play a key role in determining the properties of crystalline materials. The new class of two-dimensional materials, foremost graphene, have enabled atomically resolved studies of defects, such as vacancies, grain boundaries, dislocations, and foreign atom substitutions. However, atomic resolution imaging of implanted self-interstitials has so far not been reported in any three- but also not in any two-dimensional material. Here, we deposit extra carbon into single-layer graphene at soft landing energies of ~1 eV using a standard carbon coater. We identify all the self-interstitial dimer structures theoretically predicted earlier, employing 80 kV aberration-corrected high-resolution transmission electron microscopy. We demonstrate accumulation of the interstitials into larger aggregates and dislocation dipoles, which we predict to have strong local curvature by atomistic modeling, and to be energetically favourable configurations as compared to isolated interstitial dimers. Our results contribute to the basic knowledge on crystallographic defects, and lay out a pathway into engineering the properties of graphene by pushing the crystal into a state of metastable supersaturation.

preprint2015arXiv

Numerical correction of anti-symmetric aberrations in single HRTEM images of weakly scattering 2D-objects

Here, we present a numerical post-processing method for removing the effect of anti-symmetric residual aberrations in high-resolution transmission electron microscopy (HRTEM) images of weakly scattering 2D-objects. The method is based on applying the same aberrations with the opposite phase to the Fourier transform of the recorded image intensity and subsequently inverting the Fourier transform. We present the theoretical justification of the method and its verification based on simulated images in the case of low-order anti-symmetric aberrations. Ultimately the method is applied to experimental hardware aberration-corrected HRTEM images of single-layer graphene and MoSe2 resulting in images with strongly reduced residual low-order aberrations, and consequently improved interpretability. Alternatively, this method can be used to estimate by trial and error the residual anti-symmetric aberrations in HRTEM images of weakly scattering objects.

preprint2014arXiv

Non-invasive transmission electron microscopy of vacancy defects in graphene produced by ion irradiation

Irradiation with high-energy ions has been widely suggested as a tool to engineer properties of graphene. Experiments show that it indeed has a strong effect on its transport, magnetic and mechanical characteristics. However, to use ion irradiation as an engineering tool requires understanding of the type and detailed characteristics of the produced defects which is still lacking, as the use of high-resolution transmission electron microscopy (HRTEM) - the only technique allowing direct imaging of atomic-scale defects - often modifies or even creates defects during imaging, thus making it impossible to determine the intrinsic atomic structure. Here we show that encapsulating the studied graphene sample between two other (protective) graphene sheets allows non-invasive HRTEM imaging and reliable identification of atomic-scale defects. Using this simple technique, we demonstrate that proton irradiation of graphene produces reconstructed monovacancies, which explains the profound effect that such defects have on magnetic and transport properties. This finding resolves the existing uncertainty with regard to the effect of ion irradiation on the electronic structure of graphene.

preprint2013arXiv

The pristine atomic structure of MoS2 monolayer protected from electron radiation damage by graphene

Materials can, in principle, be imaged at the level of individual atoms with aberration corrected transmission electron microscopy. However, such resolution can be attained only with very high electron doses. Consequently, radiation damage is often the limiting factor when characterizing sensitive materials. Here, we demonstrate a simple and effective method to increase the electron radiation tolerance of materials by using graphene as protective coating. This leads to an improvement of three orders of magnitude in the radiation tolerance of monolayer MoS2. Further on, we construct samples in different heterostructure configurations to separate the contributions of different radiation damage mechanisms.

preprint2012arXiv

Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping

Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs.