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Olivier Poncelet

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2 publications

preprint2021arXiv

Experimental demonstration of negative refractionwith 3D locally resonant acoustic metafluids

Negative refraction of acoustic waves is demonstrated through underwater experiments conducted at ultrasonic frequencies on a 3D locally resonant acoustic metafluid made of soft porous silicone-rubber micro-beads suspended in a yield-stress fluid. By measuring the refracted angle of the acoustic beam transmitted through this metafluid shaped as a prism, we determine the acoustic index to water according to Snell's law. These experimental data are then compared with an excellent agreement to calculations performed in the framework of Multiple Scattering Theory showing that the emergence of negative refraction depends on the volume fraction ΦΦ of the resonant micro-beads. For diluted metafluid (Φ=3%Φ=3\%), only positive refraction occurs whereas negative refraction is demonstrated over a broad frequency band with concentrated metafluid (Φ=17%Φ=17\%).

preprint2014arXiv

Using top graphene layer as sacrificial protection during dielectric atomic layer deposition

We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphene layer. Based on Raman spectra, we demonstrate that the bottom graphene layer has the salient features of single layer graphene. During the initial half-cycle PE-ALD, the upper graphene layer reacts with the metal precursor, forming uniform nucleation islands or an active metallic carbide layer. After monolayer dielectric coverage, the bottom graphene layer has additional protection. The upper graphene layer serves as a sacrificial layer, which not only promotes the adhesion of dielectric on graphene, but also protects the lattice symmetry of the bottom graphene layer. Our results indicate that bilayer graphene allows for controlling/limiting the degree of defect during the ALD of dielectrics and could be a good starting material for building filed effect transistors and sensing devices.

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