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Olivier Buisson

Olivier Buisson contributes to research discovery and scholarly infrastructure.

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Published work

5 published item(s)

preprint2022arXiv

How does the degree of novelty impacts semi-supervised representation learning for novel class retrieval?

Supervised representation learning with deep networks tends to overfit the training classes and the generalization to novel classes is a challenging question. It is common to evaluate a learned embedding on held-out images of the same training classes. In real applications however, data comes from new sources and novel classes are likely to arise. We hypothesize that incorporating unlabelled images of novel classes in the training set in a semi-supervised fashion would be beneficial for the efficient retrieval of novel-class images compared to a vanilla supervised representation. To verify this hypothesis in a comprehensive way, we propose an original evaluation methodology that varies the degree of novelty of novel classes by partitioning the dataset category-wise either randomly, or semantically, i.e. by minimizing the shared semantics between base and novel classes. This evaluation procedure allows to train a representation blindly to any novel-class labels and evaluate the frozen representation on the retrieval of base or novel classes. We find that a vanilla supervised representation falls short on the retrieval of novel classes even more so when the semantics gap is higher. Semi-supervised algorithms allow to partially bridge this performance gap but there is still much room for improvement.

preprint2022arXiv

Observation of two-mode squeezing in a traveling wave parametric amplifier

Traveling wave parametric amplifiers (TWPAs) have recently emerged as essential tools for broadband near quantum-limited amplification. However, their use to generate microwave quantum states still misses an experimental demonstration. In this letter, we report operation of a TWPA as a source of two-mode squeezed microwave radiation. We demonstrate broadband entanglement generation between two modes separated by up to 400 MHz by measuring logarithmic negativity between 0.27 and 0.51 and collective quadrature squeezing below the vacuum limit between 1.5 and 2.1 dB. This work opens interesting perspectives for the exploration of novel microwave photonics experiments with possible applications in quantum sensing and continuous variable quantum computing.

preprint2020arXiv

Highly transparent contacts to the 1D hole gas in ultra-scaled Ge/Si core/shell nanowires

Semiconductor-superconductor hybrid systems have outstanding potential for emerging high-performance nanoelectronics and quantum devices. However, critical to their successful application is the fabrication of high-quality and reproducible semiconductor-superconductor interfaces. Here, we realize and measure axial Al-Ge-Al nanowire heterostructures with atomically precise interfaces, enwrapped by an ultrathin epitaxial Si layer further denoted as Al-Ge/Si-Al nanowire heterostructures. The heterostructures were synthesized by a thermally induced exchange reaction of single-crystalline Ge/Si core/shell nanowires and lithographically defined Al contact pads. Applying this heterostructure formation scheme enables self-aligned quasi one-dimensional crystalline Al leads contacting ultrascaled Ge/Si segments with contact transparencies greater than 96%. Integration into back-gated field-effect devices and continuous scaling beyond lithographic limitations allows us to exploit the full potential of the highly transparent contacts to the 1D hole gas at the Ge-Si interface. This leads to the observation of ballistic transport as well as quantum confinement effects up to temperatures of 150 K. Low-temperature measurements reveal proximity-induced superconductivity in the Ge/Si core/shell nanowires. The realization of a Josephson field-effect transistor allows us to study the subgap structure caused by multiple Andreev reflections. Most importantly, the absence of a quantum dot regime indicates a hard superconducting gap originating from the highly transparent contacts to the 1D hole gas, which is potentially interesting for the study of Majorana zero modes. Moreover, underlining the importance of the proposed thermally induced Al-Ge/Si-Al heterostructure formation technique, our system could contribute to the development of key components of quantum computing such as gatemon or transmon qubits

preprint2019arXiv

A photonic crystal Josephson traveling wave parametric amplifier

An amplifier combining noise performances as close as possible to the quantum limit with large bandwidth and high saturation power is highly desirable for many solid state quantum technologies such as high fidelity qubit readout or high sensitivity electron spin resonance for example. Here we introduce a new Traveling Wave Parametric Amplifier based on Superconducting QUantum Interference Devices. It displays a 3 GHz bandwidth, a -102 dBm 1-dB compression point and added noise near the quantum limit. Compared to previous state-of-the-art, it is an order of magnitude more compact, its characteristic impedance is in-situ tunable and its fabrication process requires only two lithography steps. The key is the engineering of a gap in the dispersion relation of the transmission line. This is obtained using a periodic modulation of the SQUID size, similarly to what is done with photonic crystals. Moreover, we provide a new theoretical treatment to describe the non-trivial interplay between non-linearity and such periodicity. Our approach provides a path to co-integration with other quantum devices such as qubits given the low footprint and easy fabrication of our amplifier.

preprint2012arXiv

Etching suspended superconducting hybrid junctions from a multilayer

A novel method to fabricate large-area superconducting hybrid tunnel junctions with a suspended central normal metal part is presented. The samples are fabricated by combining photo-lithography and chemical etch of a superconductor - insulator - normal metal multilayer. The process involves few fabrication steps, is reliable and produces extremely high-quality tunnel junctions. Under an appropriate voltage bias, a significant electronic cooling is demonstrated.